PD - 94154 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N5210 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5N5210 -100V RDS(on) 0.060Ω ID -31A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units -31 -19 -124 125 1.0 ±20 340 -19 12.5 4.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5 s) 2.6 (Typical) C g For footnotes refer to the last page www.irf.com 1 03/26/01 IRF5N5210 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units — — V -0.11 — V/°C — 0.06 Ω — — — — -4.0 — -25 -250 V S( ) Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -19A ➃ VDS = VGS, ID = -250µA VDS = -50V, IDS = -19A ➃ VDS = -100V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS =-10V, ID = -19A VDS = -80V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -100 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 10 IDSS Zero Gate Voltage Drain Current — — µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 -100 100 215 30 115 28 150 103 116 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2700 830 470 — — — nA nC VDD = -50V, ID = -19A, VGS =-10V, RG = 2.5Ω ns Measured from the center of drain pad to center of source pad nH pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — -31 -124 -1.6 290 2.1 Test Conditions A V ns µC Tj = 25°C, IS = -19A, VGS = 0V ➃ Tj = 25°C, IF = -19A, di/dt ≥ 100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5N5210 1000 1000 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 100 100 10 -4.5V 1 20µs PULSE WIDTH T = 25 C 1 10 -4.5V 1 20µs PULSE WIDTH T = 150 C ° J 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 TJ = 25 ° C 100 TJ = 150 ° C 10 15 V DS = -50V 20µs PULSE WIDTH 1 4 6 8 10 12 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 -I D , Drain-to-Source Current (A) 10 ° J 0.1 0.1 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -31A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5N5210 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 4000 Ciss 3000 Coss 2000 C rss 1000 0 1 10 ID = -19A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 40 80 120 160 200 240 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 -I D, Drain-to-Source Current (A) 1000 100 TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.4 0.6 0.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 0.1 0.2 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = -80V VDS = -50V VDS = -20V -VDS , Drain-to-Source Voltage (V) -ISD , Reverse Drain Current (A) C, Capacitance (pF) 5000 20 -VGS , Gate-to-Source Voltage (V) 6000 1.6 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5N5210 35 RD V DS 30 -ID , Drain Current (A) VGS 25 D.U.T. RG + V DD 20 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 10 Fig 10a. Switching Time Test Circuit VGS 5 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5N5210 D .U .T RG VD D IA S VGS -20V tp A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) 800 L VDS ID -8.5A -12A BOTTOM -19A TOP 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5N5210 Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ -19A, di/dt ≤ -390 A/µs, maximum junction temperature. VDD = -25 V, Starting TJ = 25°C, L= 1.9mH Peak IAS = -19A, VGS = -10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01 www.irf.com 7