PD - 94267 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3415 150V RDS(on) ID 0.042Ω 37.5A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range 37.5 22 150 125 1.0 ±20 210 22 12.5 3.0 -55 to 150 Package Mounting Surface Temp. Weight 300 (for 5s) 2.6 (Typical) A W W/°C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 06/19/01 IRF5N3415 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 150 — — V VGS = 0V, ID = 250µA — 0.18 — V/°C Reference to 25°C, ID = 1.0mA — — 0.042 Ω 2.0 19 — — — — — — 4.0 — 25 250 V S( ) IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 200 17 98 20 110 75 110 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2700 560 280 — — — VGS = 10V, ID = 22A ➃ Ω µA l nA nC VDS = VGS, ID = 250µA VDS =15V, IDS = 22A ➃ VDS = 150V ,VGS=0V VDS = 120V, VGS = 0V, TJ =125°C VGS =-20V VGS = -20V VGS =10V, ID = 22A VDS = 120V VDD = 75V, ID = 22A, VGS = 10V, RG = 2.5Ω ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Min Typ Max Units Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — — — — — 37.5 150 1.3 390 3.3 Test Conditions A V ns µC Tj = 25°C, IS = 22A, VGS = 0V ➃ Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.0 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5N3415 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 4.5V 10 20µs PULSE WIDTH T = 25 C ° J 1 0.1 1 10 4.5V 10 100 TJ = 25 ° C 100 TJ = 150 ° C 15 V DS = 50V 20µs PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 7.0 10 100 Fig 2. Typical Output Characteristics 1000 6.0 ° J 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 20µs PULSE WIDTH T = 150 C 1 0.1 VDS , Drain-to-Source Voltage (V) 10 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 37.5A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5N3415 VGS = Ciss = Crss = Coss = C, Capacitance (pF) 5000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 4000 Ciss 3000 C oss 2000 Crss 1000 20 VGS , Gate-to-Source Voltage (V) 6000 0 ID = 22A VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 80 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 TJ = 150 ° C TJ = 25 ° C 1 V GS = 0 V 0.6 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 0.1 0.2 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.4 10 1ms Tc = 25°C Tj = 150°C Single Pulse 10ms 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5N3415 40 RD V DS I D , Drain Current (A) VGS D.U.T. RG 30 + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5N3415 1 5V D R IV E R L VD S D .U .T. RG + V - DD IA S VGS 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 400 TOP BOTTOM 300 ID 10A 14A 22A 200 100 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5N3415 Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 22A, di/dt ≤ 100 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 0.87mH Peak IAS = 22A, VGS = 10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 150V, TJ ≤ 150°C Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/01 www.irf.com 7