IRF IRF5M3205

PD - 94292A
HEXFET® POWER MOSFET
THRU-HOLE (TO-254AA)
IRF5M3205
55V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF5M3205
55V
RDS(on)
0.015Ω
ID
35A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-254AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
35*
140
125
1.0
±20
475
35
12.5
2.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/28/01
IRF5M3205
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
l Ciss
C oss
C rss
Typ Max Units
Test Conditions
55
—
—
V
VGS = 0V, ID = 250µA
—
0.056
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.015
Ω
2.0
34
—
—
—
—
—
—
4.0
—
25
250
V
S( )
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
32
74
22
80
70
55
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3600
1200
445
—
—
—
VGS = 10V, ID = 35A ➃
VDS = VGS, ID = 250µA
VDS =15V, IDS = 35A ➃
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS =-20V
VGS = -20V
VGS =10V, ID = 35A
VDS = 44V
Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 28V, ID = 35A,
VGS = 10V, RG = 2.5Ω
ns
nH
pF
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Min Typ Max Units
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
35*
140
1.3
130
410
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 35A, VGS = 0V ➃
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.0
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF5M3205
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
4.5V
10
20µs PULSE WIDTH
T = 25 C
1
4.5V
10
10
100
TJ = 25 ° C
100
TJ = 150 ° C
15
V DS = 25V
20µs PULSE WIDTH
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
7.0
10
100
Fig 2. Typical Output Characteristics
1000
6.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
°
J
1
0.1
VDS , Drain-to-Source Voltage (V)
10
4.0
20µs PULSE WIDTH
T = 150 C
°
J
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 35A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5M3205
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
6000
4500
Ciss
3000
C
oss
1500
Crss
20
VGS , Gate-to-Source Voltage (V)
7500
ID = 35A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
50
100
150
200
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
VDS = 44V
VDS = 27V
VDS = 11V
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
100µs
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1ms
10
2.5
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF5M3205
80
RD
V DS
LIMITED BY PACKAGE
I D , Drain Current (A)
VGS
D.U.T.
RG
60
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF5M3205
1 5V
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
ID
15.7A
22A
BOTTOM 35A
TOP
1000
D R IV E R
L
VD S
EAS , Single Pulse Avalanche Energy (mJ)
1200
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
QG
10V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF5M3205
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 35A, di/dt ≤ 230 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 0.8 mH
Peak IAS = 35A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA
0.12 [.005]
3 .7 8 ( .14 9 )
3 .5 3 ( .13 9 )
-A -
2 0 .3 2 ( .8 0 0 )
2 0 .0 7 ( .7 9 0 )
17 .4 0 ( .6 8 5 )
16 .8 9 ( .6 6 5 )
3 1 .4 0 ( 1.2 3 5 )
3 0 .3 9 ( 1.1 9 9 )
6 .6 0 ( .2 6 0 )
6 .3 2 ( .2 4 9 )
1
2
1 3 .8 4 ( .5 4 5 )
1 3 .5 9 ( .5 3 5 )
3
-C -
-B -
A
1 .2 7 ( .0 5 0 )
1 .0 2 ( .0 4 0 )
22.73 [.895]
21.21 [.835]
3X
13.84 [.545]
13.59 [.535]
LEGEND
1
1 - C O LL
2 - E M IT
3 - G A TE
3.81 [.150]
1 .1 4 ( .0 4 5 )
0 .8 9 ( .0 3 5 )
.50 ( .0 2 0 )
.25 ( .0 1 0 )
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
4.82 [.190]
3.81 [.150]
3 .8 1 ( .1 5 0 )
2X
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
.1 2 ( .0 0 5 )
1 3 .8 4 ( .5 4 5 )
1 3 .5 9 ( .5 3 5 )
3 .8 1 ( .1 5 0 )
2X
2
1.27 [.050]
1.02 [.040]
B
R 1.52 [.060]
3
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
M C A M B
M C
LEGEND
1- DRAIN
2- SOURCE
3- GATE
IRHM57163SED
IRHM57163SEU
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
www.irf.com
7