BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR949T RKs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 10 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 1.5 Collector current IC 70 Base current IB 7 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 75°C 1) Thermal Resistance Junction - soldering point 2) RthJS 300 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-24-2001 BFR949T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 10 - - VBEF - - 1.05 ICBO - - 100 nA IEBO - - 0.1 µA hFE 100 140 200 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Base-emitter forward voltage IE = 25mA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V 2 Oct-24-2001 BFR949T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 7 9 - Ccb - 0.31 0.4 Cce - 0.2 - Ceb - 0.6 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance pF VCB = 10 V, f = 1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1MHz Noise figure F IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz - 1 2.5 - 1.5 - Gms - 20 - Gma - 14 - 13 16 - - 11 - IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) dB IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz 1G ms 2G ma = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-24-2001 BFR949T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.36 fA BF = 120 - NF = 1.085 - VAF = 30 V IKF = 0.152 A ISE = 1.86 pA NE = 1.998 - BR = 33.322 - NR = 1.095 - VAR = 41.889 V IKR = 0.063 A ISC = 3.68 pA NC = 1.569 - RB = 20.766 IRB = 72.2 µA RBM = 0.823 RE = 0.101 RC = 0.849 CJE = 291 fF VJE = 0.586 V MJE = 0.456 TF = 8.77 ps XTF = 0.00894 - VTF = 0.198 V ITF = 1.336 mA PTF = 0 deg CJC = 459 fF VJC = 1.048 V MJC = 0.334 - XCJC = 0.217 - TR = 1.39 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - NK = 0.5 - EG = 1.11 eV . - FC = 0.924 - TNOM 300 K L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C1 = 62 fF C2 = 84 fF C3 = 180 fF C4 = 7 fF C5 = 40 fF C6 = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 E C3 C5 EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Oct-24-2001 BFR949T Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp ) 10 2 RthJS Ptotmax / PtotDC 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-24-2001 BFR949T Collector-base capacitance Ccb = f (VCB ) Transition frequency fT = f (IC ) f = 1MHz VCE = Parameter 10 0.6 10V 8V GHz 0.4 fT Ccb pF 5V 6 0.3 3V 4 0.2 2V 1V 2 0.1 0.7V 0 0 5 10 V 15 0 0 25 5 10 15 20 25 30 VCB Power Gain Gma , Gms = f(IC ) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 10V 45 IC Power Gain Gma , Gms = f(IC ) 22 35 mA 16 10V 8V 8V dB 5V dB 5V 3V 16 G G 3V 2V 8 2V 13 1V 4 1V 10 0.7V 0.7V 7 0 5 10 15 20 25 30 35 mA 0 0 45 IC 5 10 15 20 25 30 35 mA 45 IC 6 Oct-24-2001 BFR949T Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 25 IC=10mA 0.9GHz dB 0.9GHz G 1.8GHz 15 1.8GHz 10 5 0 0 3 V 6 12 VCE Power Gain |S21 |2 = f(f) Power Gain Gma , Gms = f(f) VCE = Parameter VCE = Parameter 45 30 IC=10mA dB IC =10mA dB |S21|2 35 G 30 20 25 15 20 15 10 10 10V 5V 5 5 10V 5V 1V 1V 0 0 1 2 3 4 5 GHz 0 0 7 f 1 2 3 4 5 GHz 7 f 7 Oct-24-2001