BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 193 SOT-23 RCs Q62702-F1218 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot TS ≤ 69 °C Values Unit V mA mW 580 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 140 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-11-1996 BFR 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.68 1 - 0.24 - - 1.8 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - f = 900 MHz - 14.5 - f = 1.8 GHz - 9 - f = 900 MHz - 12.5 - f = 1.8 GHz - 7 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 193 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA BF = 125 - NF = 0.95341 - VAF = 24 V IKF = 0.26949 A ISE = 10.627 fA NE = 1.935 - BR = 14.267 - NR = 1.4289 - VAR = 3.8742 V IKR = 0.037925 A ISC = 0.037409 fA NC = 0.94371 - RB = 1 Ω IRB = 0.91763 mA RBM = 1.8368 Ω RE = 0.76534 Ω RC = 0.11938 Ω CJE = 1.1824 fF VJE = 0.70276 V MJE = 0.48654 - TF = 18.828 ps XTF = 0.69477 - VTF = 0.8 V ITF = 0.96893 mA PTF = 0 deg CJC = 935.03 fF VJC = 1.1828 V MJC = 0.30002 - XCJC = 0.053563 - TR = 1.0037 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.72063 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.43 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 600 mW 500 Ptot} TS 450 400 350 300 TA 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS P totmax/PtotDC 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 1 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFR 193 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.3 9 pF GHz 1.1 Ccb fT 1.0 0.9 8V 7 5V 6 3V 0.7 5 2V 0.6 4 0.8 0.5 1V 3 0.4 0.7V 0.3 2 0.2 1 0.1 0.0 0 0 4 8 12 16 V VR 22 0 10 20 30 40 50 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 16 60 70 mA 85 IC 10 dB G 8V 8V dB G 8 3V 7 2V 3V 12 2V 6 10 5 4 1V 8 1V 3 6 0 10 20 Semiconductor Group 30 40 50 60 2 0.7V 70 mA 85 IC 0 6 10 20 30 40 50 60 0.7V 70 mA 85 IC Dec-11-1996 BFR 193 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 16 38 IC=30mA dBm 0.9GHz dB 8V 34 G IP3 0.9GHz 12 32 5V 30 28 3V 10 26 1.8GHz 24 8 2V 22 1.8GHz 20 6 18 16 4 1V 14 2 0 1 2 3 4 5 6 7 8 V 12 0 10 10 20 30 40 50 60 70 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 80 mA 100 IC 30 IC=30mA IC=30mA dB dB G S21 24 22 20 18 16 14 12 10 8 6 10V 1V 0.7V 4 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2 -2 0.0 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996