PD- 91760 IRG4CC30SB IRG4CC30SB IGBT Die in Wafer Form C 600 V Size 3 Standard Speed 6" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 600V Min. 3.0V Min., 6.0V Max. 300 µA Max. ± 11µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V T J = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA T J = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Cr-Ni / V-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) 0.141" x 0.164" 150mm, with std. < 100 > flat .015" + / -.003" 01-5225 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRG4BC30S Die Outline 9/24/98 Powered by ICminer.com Electronic-Library Service CopyRight 2003