BAT 60A Silicon Schottky Diode • Rectifier Schottky diode with extreme low VF drop for mobile communication 2 • For power supply • For clamping and proptection in low voltage application 1 • For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 60A white/3 Q62702-A1188 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Diode reverse voltage VR 10 V Forward current IF 3 A Surge forward current (t< 100µs) IFSM 5 mA Total power dissipation, T S = 28 °C Ptot 1350 mW Junction temperature Tj Storage temperature Tstg 150 Unit °C - 55 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 160 RthJS ≤ 90 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 60A Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values min. typ. Unit max. DC characteristics Reverse current mA IR VR = 5 V - 0.3 - VR = 8 V - 0.45 - - 18 - Reverse current IR µA VR = 8 V, TA = 80 °C Forward voltage V VF I F = 10 mA - 0.12 - I F = 100 mA - 0.2 - I F = 1000 mA - 0.3 - - 20 - AC characteristics Diode capacitance CT pF VR = 5 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 60A Forward current IF = f (TA*;TS) Reverse current IR = f (TA) * Package mounted on epoxy VR = 8V 10 0 3200 A mA 10 -1 2000 IR IF 2400 TS 10 -2 1600 10 -3 1200 TA 800 10 -4 400 0 0 20 40 60 80 120 °C 100 10 -5 -20 150 0 20 40 °C 60 100 TA,TS TA Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 2 IFmax / IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-04-1998 1998-11-01