BAT 15-03W Silicon Schottky Diode • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-03W P/white Q62702Q62702-A1104 Pin Configuration Package 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 4 V Forward current IF 100 mA Total power dissipation TS = 70°C Operating temperature range Ptot 100 mW Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 °C Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 770 RthJS ≤ 690 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-19-1996 BAT 15-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Breakdown voltage V(BR) I(BR) = 5 µA V 4 - - IF = 1 mA - 0.23 0.32 IF = 10 mA - 0.32 0.41 Forward voltage VF AC characteristics Diode capacitance CT VR = 0 , f = 1 MHz Differential forward resistance - - 0.35 Ω RF IF 10mA/ 50 mA Semiconductor Group pF - 2 5.5 - Mar-19-1996 BAT 15-03W Forward Current IF = f(VF) Reverse current IR = f (TA) Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group 3 Mar-19-1996 BAT 15-03W Package Semiconductor Group 4 Mar-19-1996