BAS 125-07W Silicon Schottky Diode 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BAS 125-07W 17s Pin Configuration Q62702-D1347 Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Symbol Diode reverse voltage VR 25 V Forward current IF 100 mA Surge forward current (t< 100µs) I FSM 500 Total power dissipation, T S = 25 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg Value Unit - 55 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 725 RthJS ≤ 565 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-04-1998 1998-11-01 BAS 125-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics IR Reverse current µA VR = 20 V - - 150 VR = 25 V - - 200 VF Forward voltage mV I F = 1 mA - 385 400 I F = 10 mA - 530 650 I F = 35 mA - 800 900 CT - - 1.1 pF rf - 16 - Ω AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Jun-04-1998 1998-11-01 BAS 125-07W Forward current IF = f (V F) Forward current IF = f (TA*;TS) T A = Parameter * Package mounted on epoxy 10 2 ΙF BAS 125... EHD07115 100 ΙF mA BAS 125... EHD07119 mA 80 10 1 TA = -40C 25 C 85 C 150 C 10 0 TS 60 TA 40 10 -1 20 10 -2 0.0 0.5 0 1.0 V 0 50 100 VF Differential forward resistance rf = f (IF) f = 10 kHz T A = Parameter ΙR BAS 125... EHD07116 10 4 rf TA = 125 C µA 150 TA ; TS Reverse current I R = f (VR) 10 1 C 10 0 BAS 125... EHD07118 Ω 10 3 TA = 85 C 10 -1 10 2 10 -2 10 -3 10 1 TA = 25 C 0 10 V 10 0 10 -2 20 10 0 10 1 mA 10 2 ΙF VR Semiconductor Group Semiconductor Group 10 -1 33 Jun-04-1998 1998-11-01 BAS 125-07W Diode capacitance CT = f (V R) f = 1MHz 1.0 CT BAS 125... EHD07117 pF 0.8 0.6 0.4 0.2 0.0 0 10 V 20 VR Semiconductor Group Semiconductor Group 44 Jun-04-1998 1998-11-01