Previous Datasheet Index Next Data Sheet PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V G @VGE = 15V, I C = 11A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 900 20 11 40 40 ±20 10 100 42 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-255 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 1.2 — 40 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGPF30F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 900 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.83 — V/°C VGE = 0V, I C = 1.0mA — 2.6 3.7 IC = 11A V GE = 15V — 3.3 — V IC = 20A See Fig. 2, 5 — 2.9 — IC = 11A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 3.6 6.9 — S VCE = 100V, I C = 11A — — 250 µA VGE = 0V, V CE = 900V — — 1000 VGE = 0V, V CE = 900V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 22 33 IC = 11A 5.1 7.7 nC VCC = 400V See Fig. 8 8.0 12 VGE = 15V 27 — TJ = 25°C 9.7 — ns IC = 11A, V CC = 720V 160 280 VGE = 15V, R G = 23Ω 140 240 Energy losses include "tail" 0.33 — 0.67 — mJ See Fig. 9, 10, 11, 14 1.0 1.9 27 — TJ = 150°C, 12 — ns IC = 11A, V CC = 720V 260 — VGE = 15V, R G = 23Ω 250 — Energy losses include "tail" 2.0 — mJ See Fig. 10, 14 13 — nH Measured 5mm from package 560 — VGE = 0V 50 — pF VCC = 30V See Fig. 7 7.3 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 23Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-256 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPF30F 30 L O A D C U R R E N T (A ) F or bo th : T ria n g u la r w a v e : D u ty c yc le : 5 0 % TJ = 1 2 5 ° C T s ink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 2 4 W C la m p v o lta g e : 8 0 % o f ra te d 20 S q u are w av e: 6 0 % o f ra te d v o lta g e 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) T J = 2 5°C TJ = 25 °C TJ = 15 0 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 T J = 1 50 °C 10 V C C = 1 00 V 5 µ s P U L S E W ID TH 1 10 5 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-257 To Order 20 Previous Datasheet Index Next Data Sheet IRGPF30F 5.0 V G E = 15 V V C E , C ollector-to-E m itter V oltage (V) Maxim um D C Collector C urrent (A ) 20 16 12 8 4 VG E = 1 5 V 80 µs P UL S E W ID TH IC = 2 2A 4.0 I C = 11 A 3.0 I C = 5.5A 2.0 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJ C ) 10 1 D = 0.5 0 0.20 PD M 0.10 0.1 0 .0 2 0 .0 1 0.01 0.00001 t 0 .05 1 t S IN G L E PU LS E (TH E R MAL RE S PO N SE ) N o te s : 1 . D u ty f ac t or D = t 1 / t 2 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-258 To Order 10 Previous Datasheet Index Next Data Sheet IRGPF30F 1 0 00 V G E , G ate-to-E m itter V oltage (V ) 8 00 C , C ap ac ita nc e (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 00 V I C = 1 1A 16 Cies 12 6 00 Coes 4 00 2 00 Cres 8 4 0 0 1 10 0 10 0 5 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1 .0 8 15 20 25 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 7 20 V = 15 V = 25 °C = 1 1A T o tal S w itc hing Los se s (m J) Total S w itching L osse s (mJ) 1 .1 0 10 Q g , Total G ate C harge (nC ) 1 .0 6 1 .0 4 1 .0 2 R G = 22 Ω V GE = 1 5 V V CC = 72 0V I C = 22A I C = 1 1A 1 I C = 5.5A 1 .0 0 0.1 0 .9 8 20 25 30 35 40 45 50 -60 55 R G , G ate R es istance (Ω ) -40 -20 0 20 40 60 80 100 120 14 0 160 TC , C ase Tem peratu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-259 To Order Previous Datasheet Index Next Data Sheet IRGPF30F RG TC V CC VGE 5.0 100 = 22 Ω = 150 °C = 7 20 V = 15 V I C , C ollec to r-to -E m itter C u rre nt (A ) Total Sw itching Losses (m J) 6.0 4.0 3.0 2.0 1.0 0.0 VGGE E= 20 V T J = 12 5°C S A FE O P E R A TIN G A R E A 10 1 0.1 0 5 10 15 20 25 1 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o llector-to -E m itte r Current (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix F: Section D - page D-8 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-260 To Order Section D - page D-13 1000