IRF IRGPC50MD2

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PD - 9.1145A
IRGPC50MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Short Circuit Rated
Fast CoPack IGBT
Features
C
VCES = 600V
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 2.0V
G
@VGE = 15V, IC = 35A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
60
35
120
120
25
120
10
± 20
200
78
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-399
To Order
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
0.64
0.83
—
40
—
Units
°C/W
g (oz)
Revision 2
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IRGPC50MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.62 —
V/°C VGE = 0V, IC = 1.0mA
—
1.8
2.0
IC = 35A
V GE = 15V
—
2.3
—
V
IC = 60A
See Fig. 2, 5
—
2.0
—
IC = 35A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-14
— mV/°C VCE = VGE, IC = 250µA
11
20
—
S
VCE = 100V, I C = 35A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 6500
VGE = 0V, V CE = 600V, T J = 150°C
—
1.3
1.7
V
IC = 25A
See Fig. 13
—
1.2
1.5
IC = 25A, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
120
25
40
78
110
340
265
2.1
4.0
6.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
110
610
440
9.4
13
2900
230
30
50
105
4.5
8.0
112
420
250
160
Max. Units
Conditions
180
IC = 35A
38
nC
VCC = 400V
60
See Fig. 8
—
TJ = 25°C
—
ns
IC = 35A, V CC = 480V
510
VGE = 15V, R G = 5.0Ω
400
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
See Fig. 9, 10, 11, 18
9.5
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0Ω, VCPK < 500V
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 35A, V CC = 480V
—
VGE = 15V, R G = 5.0Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
75
ns
TJ = 25°C See Fig.
160
TJ = 125°C
14
I F = 25A
10
A
TJ = 25°C See Fig.
15
TJ = 125°C
15
V R = 200V
375
nC
TJ = 25°C See Fig.
1200
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 5.0Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-400
To Order
Pulse width 5.0µs,
single shot.
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IRGPC50MD2
40
D u ty cycle: 5 0%
TJ = 12 5 °C
T s in k = 90 °C
G at e drive a s sp e cif ie d
T urn -on lo sses in clud e
30
e ff ects of reve rse reco ve ry
Pow er Diss ipa tion = 40 W
20
10
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
10 00
100
IC , C ollector-to-E m itte r C urrent (A )
I C , Co llector-to-E m itter C urrent (A)
1000
2 5 °C
1 50°C
10
1 00
15 0°C
2 5°C
10
V GE = 15 V
2 0 µ s P U L S E W ID T H
1
0.1
1
V CC = 1 0 0V
5µ s P U L S E W ID TH
1
10
5
10
15
V G E , G a te-to-E m itter V o ltage (V )
V C E , C olle ctor-to-Em itter Voltage (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-401
To Order
20
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IRGPC50MD2
3.5
V GE = 1 5 V
V C E , Co llector-to-E m itter V oltag e (V)
M axim um D C C ollector C urrent (A )
60
50
40
30
20
10
V GE = 1 5V
8 0 µ s P U L S E W ID TH
I C = 7 0A
3.0
2.5
I C = 3 5A
2.0
IC = 17A
1.5
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-4 0
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem pe rature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herma l R espo nse (Z thJ C )
1
D = 0 .5 0
0.2 0
0.1
0.1 0
PD M
0 .05
t
S IN G LE PU L SE
(TH ER MA L R ES PO N S E)
0.0 2
t2
N o te s :
1 . D u ty f ac t or D = t
0.0 1
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-402
To Order
10
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IRGPC50MD2
20
6 0 00
C , C a pa citan ce (pF )
5 0 00
V G E , G ate-to-E m itter Voltag e (V)
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
Cies
4 0 00
Coes
3 0 00
2 0 00
Cres
1 0 00
V CE = 4 00 V
I C = 3 5A
16
12
8
4
0
0
1
10
0
100
30
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
T otal S w itching Losses (m J)
6 .5
90
1 20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
= 48 0V
= 15V
= 25 °C
= 3 5A
T o tal S w itc hing Los se s (m J)
6 .6
60
Q G , Total G ate C harge (nC )
V C E , C ollector-to-Em itter V oltage (V )
6 .4
6 .3
6 .2
RG = 5 Ω
V G E = 15 V
V C C = 4 80 V
I C = 70 A
I C = 3 5A
10
I C = 1 7A
6 .1
6 .0
A
1
0
10
20
30
40
50
60
-60
R G , G ate R esistance (Ω )
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
-40
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-403
To Order
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IRGPC50MD2
20
1000
=5Ω
= 150 °C
= 4 80 V
= 15 V
I , C ollector-to-E m itter C urrent (A )
RG
TC
V CC
VGE
15
10
V GE
G E= 2 0V
T J = 12 5°C
100
S A F E O P E R A T IN G A R E A
10
C
5
A
0
0
20
40
60
1
1
80
10
100
V C E , Co lle ctor-to-E m itter V olta ge (V )
I C , C ollecto r-to-E m itter C urrent (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Sw itching Losses (m J)
25
TJ = 150°C
TJ = 125°C
10
1
0.6
TJ = 25°C
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-404
To Order
1000
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IRGPC50MD2
100
140
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
IF = 50A
80
I F = 50A
I IRRM - (A)
t rr - (ns)
100
I F = 25A
I F = 25A
10
I F = 10A
IF = 10A
60
40
20
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
1200
900
I F = 50A
600
IF = 25A
1000
IF = 10A
I F = 25A
300
I F = 10A
0
100
IF = 50A
1000
di f /dt - (A/µs)
100
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-405
To Order
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IRGPC50MD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
430µF
80%
of Vce
90% Ic
10% Vce
Ic
Ic
D.U.T.
5% Ic
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
t1
5% Vce
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t3
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC
C-406
To Order
Section D - page D-13