INFINEON BA597

BA 597
BA 597
Silicon PIN Diode
Preliminary Data
●
●
RF switch, RF attenuator for frequencies above
10 MHz
Very low IM distortion
Type
Ordering Code
(taped)
Pin Configuration Marking
1
2
Package
BA 597
UPON INQUIRY
C
SOD-323
A
yellow/R
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
50
V
Forward current
IF
100
mA
Total power dissipation TS ≤ 40 °C1)
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
– 55 … + 150
°C
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94
BA 597
Characteristics per Diode
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
min.
Reverse current
VR = 30 V
IR
Forward voltage
IF = 100 mA
VF
Diode capacitance
VR = 10 V, f = 1 MHz
VR = 0 V, f = 100 MHz
CT
Forward resistance
IF = 1.5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
Charge carrier lifetime
τL
max.
nA
–
–
20
V
–
0.9
–
pF
–
–
0.52
0.27
–
–
Ω
–
–
22
4.2
–
–
–
2.5
–
µs
IF = 10 mA, IR = 6 mA, IR = 3 mA
Semiconductor Group
typ.
Unit
2
BA 597
Diode capacitance CT = f (VR)
f = 1 MHz, 100 MHz
Forward resistance rt = (IF), f = 100 MHz
3rd Harmonic intercept point vs
forward current f = 100 MHz
Semiconductor Group
3