Silicon PIN Diode BAR 17 ● RF switch ● RF attenuator for frequencies above 1 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code (tape and reel) BAR 17 L6 Q62702-A858 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 100 V Forward current IF 140 mA Total power dissipation, TS ≤ 95 ˚C2) Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 Junction - ambient 2) Rth JA ≤ 295 Junction - soldering point Rth JS ≤ 215 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAR 17 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Reverse current VR = 50 V VR = 100 V IR Forward voltage IF = 100 mA VF Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz CT Charge carrier life time IF = 10 mA, IR = 6 mA τL Forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA rf Semiconductor Group 2 Values Unit min. typ. max. – – – – 50 1 nA µA – 0.91 1 V pF – – 0.32 0.37 0.55 – – 4 – – – – – 1150 160 23 3.5 – – – – µs Ω BAR 17 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina If Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group Diode capacitance CT = f (VR) 3