BSP297 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary · N-Channel VDS 200 V RDS(on) 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101 3 2 1 VPS05163 Type Package Tape and Reel Information Marking Packaging BSP297 PG-SOT223 L6327: 1000 pcs/reel BSP297 Non dry Pb-free Yes Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value Unit A ID TA=25°C 0.66 TA=70°C 0.53 Pulsed drain current ID puls 2.64 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.66A, V DS=160V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD (JESD22-A114-HBM) V 1B (>500V, <1000V) Power dissipation Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2009-08-18 BSP297 Rev. 2.1 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 200 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current µA IDSS V DS=200V, VGS=0, Tj=25°C - - 0.1 V DS=200V, VGS=0, Tj=150°C - 10 100 IGSS - 1 10 nA RDS(on) - 1.2 3 W RDS(on) - 1 1.8 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.53A Drain-source on-state resistance V GS=10V, ID=0.66A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 BSP297 Rev. 2.1 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.47 0.94 - S pF Dynamic Characteristics Transconductance g fs V DS³2*I D*RDS(on)max, ID=0.53A Input capacitance Ciss V GS=0, VDS=25V, - 286 357 Output capacitance Coss f=1MHz - 38 47 Reverse transfer capacitance Crss - 15.7 23.5 Turn-on delay time td(on) V DD=100V, V GS=4.5V, - 5.2 7.8 Rise time tr ID=0.6A, RG=15W - 3.8 5.7 Turn-off delay time td(off) - 49 74 Fall time tf - 19 29 - 0.7 0.9 - 5.2 7.8 - 12.9 16.1 V(plateau) V DD=160V, ID = 0.66 A - 2.7 3.3 V IS - - 0.66 A - - 2.64 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=160V, ID=0.66A V DD=160V, ID=0.66A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, IF = I S - 0.84 1.2 V Reverse recovery time trr V R=100V, IF=lS, - 52 78 ns Reverse recovery charge Qrr di F/dt=100A/µs - 80 120 nC Page 3 2009-08-18 BSP297 Rev. 2.1 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS³ 10 V 1.9 BSP297 0.75 BSP297 A W 1.6 0.6 0.55 0.5 1.2 ID Ptot 1.4 0.45 0.4 1 0.35 0.8 0.3 0.25 0.6 0.2 0.4 0.15 0.1 0.2 0.05 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TA 3 Safe operating area 4 Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 1 BSP297 10 2 A 10 0 on ) VD S 10 1 1 ms ID R ( DS = K/W tp = 100.0µs /I D BSP297 ZthJA 10 160 TA 10 ms 10 -1 10 0 D = 0.50 0.20 0.10 10 -2 10 -1 DC 0.05 single pulse 0.02 0.01 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2009-08-18 4 BSP297 Rev. 2.1 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 1.3 4.5 3.4V 3.8V 4V 1.1 4.6V 1 5V 6V 0.9 10V 0.8 RDS(on) ID A 2.8V 2.6V W 2.8V 3.4V 3.8V 3.5 4V 4.6V 5V 3 6V 10V 2.5 0.7 0.6 2.6V 2 0.5 1.5 0.4 0.3 1 0.2 0.5 0.1 0 0 0.4 0.8 1.2 1.6 V 0 0 2.2 0.2 0.4 0.6 0.8 1 VDS 8 Typ. forward transconductance ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max g fs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 1.3 1.4 A S 1.1 1.2 1 1.1 0.9 1 g fs ID 1.3 ID 7 Typ. transfer characteristics 0.8 0.9 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 A 0.5 1 1.5 2 2.5 V 3.5 VGS 0 0 0.2 0.4 0.6 0.8 1 A 1.3 ID Page 5 2009-08-18 BSP297 Rev. 2.1 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.66 A, VGS = 10 V parameter: V GS = VDS; ID =400µA 8.5 BSP297 2.2 W V 98% 1.8 VGS(th) RDS(on) 7 6 5 1.6 typ. 1.4 1.2 4 1 3 0.8 98% 2% 0.6 2 0.4 typ 1 0 -60 -20 20 60 0.2 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 BSP297 A Ciss pF C IF 10 0 10 2 Coss 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-18 BSP297 Rev. 2.1 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.66 A pulsed, Tj = 25 °C 16 BSP297 245 BSP297 V V V(BR)DSS 235 VGS 12 10 230 225 220 215 8 0.2 VDS max 210 0.5 VDS max 205 6 0.8 V DS max 200 4 195 190 2 185 0 0 2 4 6 8 10 12 14 16 nC 180 -60 20 QG -20 20 60 100 °C 180 Tj Page 7 2000-08-18 Rev. 2.1 Page 8 BSP297 2009-08-18