BSP295 Rev 2.3 SIPMOS Small-Signal-Transistor Product Summary Feature · N-Channel · Enhancement mode · dv/dt rated VDS 60 V RDS(on) 0.3 W ID 1.8 A • Pb-free lead plating; RoHS compliant PG-SOT223 x Qualified according to AEC Q101 4 • Halogenfree according to IEC61249221 3 2 1 Type Package Tape and Reel Information Marking Packaging BSP295 PG-SOT223 H6327: 1000 pcs/reel BSP295 Non dry VPS05163 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 1.8 TA=70°C 1.44 Pulsed drain current Unit I D puls 7.2 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) V 1B (>500V, <1000V) Power dissipation Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2012-11-28 BSP295 Rev 2.3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 0.8 1.1 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250µA Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - 8 50 - 1 10 Gate-source leakage current I GSS VGS=20V, VDS=0 Drain-source on-state resistance nA W RDS(on) VGS=10V, ID=1.8A - 0.22 0.3 VGS=4.5V, ID=1.8A - 0.39 0.5 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-28 BSP295 Rev 2.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.8 1.7 - S pF Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max, ID=1.44A Input capacitance Ciss VGS=0, VDS=25V, - 295 368 Output capacitance Coss f=1MHz - 95 118 Reverse transfer capacitance Crss - 45 67 Turn-on delay time td(on) VDD=15V, VGS=4.5V, - 5.4 8.1 Rise time tr ID=1.44 A, RG=15W - 9.9 15 Turn-off delay time td(off) - 27 41 Fall time tf - 19 28 - 0.9 1.1 - 5.6 8.4 - 14 17 V(plateau) VDD =24V, ID = 1.8 A - 3.1 3.8 V IS - - 1.8 A - - 7.2 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =24V, ID =1.8A VDD =24V, ID =1.8A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.84 1.3 V Reverse recovery time trr VR=25V, I F=lS , - 36 45 ns Reverse recovery charge Qrr diF/dt=100A/µs - 38 48 nC Page 3 2012-11-28 BSP295 Rev 2.3 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ³ 10 V BSP295 1.9 W A 1.6 1.6 1.4 1.4 1.2 1.2 ID P tot 1.9 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 °C 120 0 0 160 BSP295 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSP295 10 10 2 tp = 150.0µs /ID o S( BSP295 K/W S = A 160 °C TA VD n) RD 10 1 0 ID 10 Z thJA 1 ms 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 10 -1 0.05 single pulse 0.02 DC 10 -2 0 10 10 1 0.01 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp VDS Page 4 2012-11-28 BSP295 Rev 2.3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 3.6 1.8 A 5V 6V 7V 3 10V W 4.2V R DS(on) 2.7 3.8V ID 2.4 2.1 3V 2.4V 2.8V 3.4V 3.8V4.2V 5V 6V 1.4 7V 10V 1.2 1 1.8 3.4V 0.8 1.5 3V 0.6 1.2 0.9 2.8V 0.4 2.4V 0.2 0.6 0.3 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V VDS 0 0 5 0.6 1.2 1.8 2.4 ID 8 Typ. forward transconductance ID = f ( VGS ); VDS³ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 2.5 2.5 A S gfs ID 7 Typ. transfer characteristics 1.5 1.5 1 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 3 V VGS 3.6 A 0 0 4 0.6 1.2 1.8 2.4 3.6 V ID Page 5 2012-11-28 BSP295 Rev 2.3 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 1.8 A, VGS = 10 V parameter: VGS = VDS ; ID = 1 mA BSP295 W 2.2 0.75 V 98% 1.8 V GS(th) R DS(on) 0.6 0.55 0.5 0.45 1.6 typ. 1.4 1.2 0.4 0.35 98% 1 2% 0.3 0.8 0.25 typ 0.6 0.2 0.15 0.4 0.1 0.2 0.05 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 BSP295 A Ciss pF 10 0 C IF Coss 10 2 Crss 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2012-11-28 BSP295 Rev 2.3 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QG ); parameter: VDS , par.: ID = 3.9 A, VDD = 25 V, RGS = 25 W ID = 1.8 A pulsed, Tj = 25 °C 60 16 BSP295 V mJ V GS E AS 12 40 30 10 8 6 20 0.2 VDS max 4 0.5 VDS max 10 0.8 VDS max 2 0 20 40 60 80 100 120 °C 160 0 0 4 8 12 16 nC 24 QG Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP295 60 V (BR)DSS V 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 180 Tj Page 7 2012-11-28 Rev 2.3 Page 8 BSP295 2012-11-28