ETC 2SB1574(TENTATIVE)

Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
For low-frequency output amplification
2.3±0.1
●
●
1.0±0.1
0.1±0.05
0.8max
0.93±0.1
2.3±0.1
4.6±0.1
1
(TC=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–3
A
Collector current
IC
–2
A
Collector power dissipation (TC=25°C)
PC
10
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
Parameter
Unit: mm
6.5±0.2
5.35
4.35
0.75
2.3
2.3
0.6
0.5±0.1
˚C
1
■ Electrical Characteristics
3
1.8
Parameter
2
1:Base
2:Collector
3:Emitter
U Type Package
6.0
■ Absolute Maximum Ratings
0.5±0.1
0.75±0.1
5.5±0.2
13.3±0.3
●
Possible to solder radiation fin directly to printed cicuit boad
Type with universal characteristics
Collector breakdown voltage: VCBO/VCEO = –50V
Collector current: IC = –2A
2
3
2.3±0.1
●
2.5±0.1
■ Features
1.0±0.2
1.8±0.1
7.3±0.1
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
(TC=25˚C)
Symbol
Conditions
min
typ
max
Unit
µA
ICBO
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–5
hFE1*
VCE = –2V, IC = –200mA
120
60
Forward current transfer ratio
VCB = –10V, IE = 0
– 0.1
Collector cutoff current
V
340
hFE2
VCE = –2V, IC = –1A
Collector to emitter saturation voltage
VCE(sat)
IC = –1A, IB = –50mA
– 0.2
– 0.3
Base to emitter saturation voltage
VBE(sat)
IC = –1A, IB = –50mA
– 0.85
–1.2
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
80
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
45
*h
FE1
V
V
MHz
60
pF
Rank classification
Rank
R
S
hFE1
120 to 240
170 to 340
1
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2001 MAR