ETC 2SD1423AS

Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
Unit: mm
3.0±0.2
4.0±0.2
■ Features
Parameter
(Ta=25˚C)
Symbol
Collector to
2SD1423
base voltage
2SD1423A
Collector to
2SD1423
Ratings
30
VCBO
25
1
V
50
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
marking
V
60
VCEO
emitter voltage 2SD1423A
Unit
2
3
2.0±0.2
■ Absolute Maximum Ratings
15.6±0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
0.7±0.1
●
+0.2
0.45–0.1
●
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = 20V, IE = 0
0.1
µA
ICEO
VCE = 20V, IB = 0
1
µA
VCBO
IC = 10µA, IE = 0
VCEO
IC = 2mA, IB = 0
VEBO
IE = 10µA, IC = 0
7
hFE1*1
VCE = 10V, IC = 150mA*2
85
hFE2
VCE = 10V, IC = 500mA*2
40
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA*2
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Collector cutoff current
Collector to base
2SD1423
voltage
2SD1423A
Collector to emitter
2SD1423
voltage
2SD1423A
Emitter to base voltage
Forward current transfer ratio
30
V
60
25
V
50
V
340
0.6
200
MHz
15
6
*2
*1h
FE1
V
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SD1423, 2SD1423A
IC — VCE
1000
400
Collector current IC (mA)
300
200
100
800
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
600
400
3mA
2mA
200
1mA
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
10
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.3
1
3
10
Collector current IC (A)
Cob — VCB
Collector output capacitance Cob (pF)
IE=0
f=1MHz
Ta=25˚C
8
6
4
2
0
3
10
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03
30
100
Collector to base voltage VCB (V)
0.1
0.3
1
10
160
VCB=10V
Ta=25˚C
250
Ta=75˚C
200
150
3
Collector current IC (A)
fT — I E
25˚C
–25˚C
100
50
140
120
100
80
60
40
20
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
10
1
30
VCE=10V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
0.1
12
300
IC/IB=10
0.01
0.01 0.03
10
IC/IB=10
hFE — IC
100
1
8
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
3
6
Transition frequency fT (MHz)
Collector power dissipation PC (mW)
Ta=25˚C
0
2
VCE(sat) — IC
1200
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
500
10
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR