Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 ● ● 0.7±0.2 ■ Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –25 V Emitter to base voltage VEBO –11 V Peak collector current ICP* –10 A Collector current IC –3 A 1 2 3 Collector power dissipation PC 1 W 2.54±0.15 Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C * Applied 13.5±0.5 0.7±0.1 +0.15 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 1:Emitter 2:Collector 3:Base TO–92NL Package are shot pulse of ≤1ms width ■ Electrical Characteristics (Ta=25˚C) Symbol Parameter Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –25 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –11 Forward current transfer ratio hFE*1 VCE = –2V, IC = –1.4A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –1.4A, IB = –25mA*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz V 450 – 0.16 FE V MHz 85 *2 *1h – 0.22 150 pF Pulse measurement Rank classification Rank Q R hFE 90 ~ 180 130 ~ 450 1 Transistor 2SB1592 PC — Ta IC — VCE 1.2 IC — VBE –3.0 –6 VCE=–2V –2.5 0.8 0.6 0.4 0.2 –5 IB=–12mA –2.0 –10mA –1.5 –8mA –6mA –1.0 –4mA – 0.5 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –1 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.03 –1 –3 –10 Collector current IC (A) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 200 160 120 80 40 0 –1 –3 –10 –4 –5 –6 0 –30 –100 Collector to base voltage VCB (V) – 0.2 – 0.4 – 0.6 – 0.8 –1.0 600 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1.2 Base to emitter voltage VBE (V) fT — I E –1 –3 Collector current IC (A) Cob — VCB 240 –3 VCB=–6V f=200MHz Ta=25˚C VCE=–2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –2 600 IC/IB=56 – 0.1 –2 hFE — IC –100 –25˚C –3 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 Ta=75˚C 0 0 Transition frequency fT (MHz) 20 25˚C –4 –1 –2mA 0 0 2 Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C –10 500 400 300 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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