ETC 2SA1309AR

Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
Unit: mm
3.0±0.2
4.0±0.2
■ Features
marking
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–200
mA
Collector current
IC
–100
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
2
3
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Parameter
Symbol
ICBO
Collector cutoff current
1
2.0±0.2
■ Absolute Maximum Ratings
15.6±0.5
●
High foward current transfer ratio hFE.
Allowing supply with the radial taping.
Optimum for high-density mounting.
0.7±0.1
●
+0.2
0.45–0.1
●
Conditions
min
typ
VCB = –10V, IE = 0
max
Unit
–100
nA
–1
µA
ICEO
VCE = –10V, IB = 0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
Forward current transfer ratio
hFE
*
VCE = –10V, IC = –2mA
160
Collector to emitter saturation voltage
VCE(sat)
IC = –50mA, IB = –5mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
3.5
pF
*h
FE
460
– 0.3
V
Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
1
2SA1309A
Transistor
PC — Ta
IC — VCE
–240
350
300
250
200
150
–200
80
–160
IB=–300µA
60
–250µA
–200µA
40
–150µA
–100µA
25˚C
Ta=75˚C
–25˚C
–120
20
–80
–40
–50µA
100
0
40
60
80 100 120 140 160
0
0
–2
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.003
–10
–30
–100 –300 –1000
Collector current IC (mA)
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1
–3
–10
0
– 0.4
–30
–100
Collector to base voltage VCB (V)
–1.2
–1.6
–2.0
160
500
400
Ta=75˚C
300
– 0.8
Base to emitter voltage VBE (V)
fT — IE
25˚C
–25˚C
200
100
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
10
9
–12
VCE=–5V
Forward current transfer ratio hFE
–1
–3
–10
600
IC/IB=10
–3
– 0.001
–1
–8
hFE — IC
–10
– 0.1
–6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
– 0.3
–4
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
100
400
0
Collector output capacitance Cob (pF)
VCE=–5V
Ta=25˚C
450
50
2
IC — VBE
120
Collector current IC (mA)
Collector power dissipation PC (mW)
500
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR