Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 DESCRIPTION PIN CONFIGURATION The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over -40 to +85°C temperature range. The wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of –2dBm at the input at 900MHz. The nominal current drawn from a single 3V supply is 7.4mA. The Mixer can be powered down to further reduce the supply current to 4.4mA. DK Package VCC 1 20 VCC LNA GND 2 19 GND LNA IN 3 17 GND GND 5 16 MIXER IN GND 6 15 GND MIXER PWRDN 7 14 MIXER OUT GND 8 13 MIXER OUT FEATURES • Low current consumption: 7.4mA nominal, 4.4mA with the mixer powered-down • Outstanding LNA noise figure: 1.6dB at 900MHz • High system power gain: 18dB (LNA + Mixer) at 900MHz • Excellent gain stability versus temperature and supply voltage • External >-7dBm LO can be used to drive the mixer 18 LNA OUT GND 4 LOIN1 9 12 GND LOIN2 10 11 V CC APPLICATIONS • 900MHz cellular front-end (NADC, GSM, AMPS, TACS) • 900MHz cordless front-end (CT1, CT2) • 900MHz receivers ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # -40 to +85°C SA601DK 1563 20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP) BLOCK DIAGRAM VCC GND LNA OUT GND MIXER IN GND MIXER OUT MIXER OUT GND 20 19 18 17 16 15 14 13 12 11 9 10 VCC IF RF IF LO BUFFER LNA December 15, 1994 1 2 3 4 VCC GND LNA IN GND 5 GND 1 6 7 GND MIXER PWRDN 8 GND LO IN1 LO IN2 853-1733 14477 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 ABSOLUTE MAXIMUM RATINGS3 PARAMETER SYMBOL voltage1 VCC Supply VIN Voltage applied to any other pin PD Power dissipation, TA = 25°C (still 20-Pin Plastic SSOP RATING UNITS -0.3 to +6 V -0.3 to (VCC + 0.3) V 980 mW air)2 TJMAX Maximum operating junction temperature 150 °C PMAX Maximum power input/output +20 dBm TSTG Storage temperature range –65 to +150 °C NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 20-Pin SSOP = 110°C/W 3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD). RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER RATING UNITS Supply voltage 2.7 to 5.5 V TA Operating ambient temperature range -40 to +85 °C TJ Operating junction temperature -40 to +105 °C DC ELECTRICAL CHARACTERISTICS VCC = +3V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS 7.4 ICC VLNA–IN VLNA–OUT VMX–IN Supply current Mixer power-down input low 4.4 mA LNA input bias voltage 0.78 V LNA output bias voltage 2.1 V Mixer RF input bias voltage 0.94 V December 15, 1994 2 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 AC ELECTRICAL CHARACTERISTICS VCC = +3V, TA = 25°C; LOIN = -7dBm @ 964MHz; unless otherwise stated. LIMITS SYMBOL S21 PARAMETER TEST CONDITIONS -3σ TYP +3σ 10 11.5 13 UNITS Amplifier gain 881MHz ∆S21/∆T Gain temperature sensitivity 881MHz 0.003 dB/°C ∆S21/∆f Gain frequency variation 800MHz - 1.2GHz 0.01 dB/MHz 881MHz -20 dB S12 Amplifier reverse isolation match1 dB S11 Amplifier input 881MHz -10 dB S22 Amplifier output match1 881MHz -10 dB Amplifier input 1dB gain compression 881MHz -16 dBm P-1dB IP3 Amplifier input third order intercept NF Amplifier noise figure f2 – f1 = 25kHz, 881MHz -3.5 -2 -0.5 dBm 881MHz 1.3 1.6 1.9 dB VGC Mixer voltage conversion gain: RP = RL = 1kΩ fS = 881MHz, fLO = 964MHz, fIF = 83MHz 18.0 19.5 21.0 dB PGC Mixer power conversion gain: RP = RL = 1kΩ fS = 881MHz, fLO = 964MHz, fIF = 83MHz 5.0 6.5 8.0 dB S11M Mixer input match1 881MHz NFM Mixer SSB noise figure 881MHz P-1dB Mixer input 1dB gain compression 881MHz IP3M Mixer input third order intercept IP2INT f2 – f1 = 25kHz, 881MHz -10 8.0 9.5 dB 11.0 -13 -3.5 -2 dB dBm -0.5 dBm Mixer input second order intercept 881MHz 12 dBm PRFM-IF Mixer RF feedthrough 881MHz -7 dB PLO-IF LO feedthrough to IF 881MHz -25 dB PLO-RFM LO to mixer input feedthrough 881MHz -38 dB PLO-RF LO to LNA input feedthrough 881MHz -40 dB PLNA–RFM LNA output to mixer input 881MHz -40 dB PRFM–LO Mixer input to LO feedthrough 881MHz -23 dB LO drive level 964MHz -7 dBm LOIN NOTE: 1. Simple L/C elements are needed to achieve specified return loss. December 15, 1994 3 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 C15 J1 LNA IN w = 10 mils L = 535 mils J5 LNA OUT C3 100pF C12 2.2pF C13 100pF ** w = 15 mils L = 110 mils J2 EXT LO ** w = 10 mils L = 535 mils L1 56nH C1 100pF C2 2.7pF C11 100pF VCC 1µF w = 15 mils L = 95 mils U1 1 2 3 4 5 6 7 8 9 10 (-7dBm, 964MHz) C10 Vcc GND LNA IN GND GND Vcc GND LNA OUT GND MIXER IN GND MIXER OUT MIXER OUT GND Vcc GND MIXER PD GND LO IN LO IN 20 19 18 17 16 15 14 13 12 11 C9 4.7pF w = 15 mils L = 190 mils J4 MIXER IN 100pF C7 VCC 33pF L3 270nH C8 100nF C5 SA601 L2 18pF 470nH R2 C14 100nF C4 100pF * 2.2k VCC C6 8.2pF J3 MIXER OUT (50Ω, 83MHz) ** * *SEE MIXER POWER GAIN NOTE BELOW ** SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK ** * SEE MIXER FILTER INTERFACE NOTE BELOW Figure 1. Application Circuit CIRCUIT TECHNOLOGY LNA IP3 Performance: C9 between Pin 16 and ground can be removed to introduce 3dB mismatch loss, while improving the IP3 to +3dBm. The associated noise figure is 11dB. Impedance Match: Intrinsic return loss at the input and output ports is 7dB and 9dB, respectively. With no external matching, the associated LNA gain is ≈10dB and the noise figure is ≈1.4dB. However, the return loss can be improved at 881MHz using suggested L/C elements (Figure 1) as the LNA is unconditionally stable. Mixer Noise Match: The LNA achieves 1.6dB noise figure at 881MHz when S11 = -10dB. Further improvements in S11 will slightly decrease the NF and increase S21. Power Gain: The gain can be increased by approximately 1.5dB by placing R2 across C7, instead of C5. Input Match: The mixer is configured for maximum gain and best noise figure. The user needs to supply L/C elements to achieve this performance. Power Down: The mixer can be disabled by connecting Pin 7 to ground. When the mixer is disabled, 3mA is saved. Temperature Compensation: The LNA has a built-in temperature compensation scheme to reduce the gain drift to 0.003dB/°C from –40°C to +85°C. Supply Voltage Compensation: Unique circuitry provides gain stabilization over wide supply voltage range. The gain changes no more than 0.5dB when VCC increases from 3V to 5V. Power Combining: The mixer output circuit features passive power combining (patent pending) to optimize conversion gain and noise figure performance without using extra DC current or degrading the IP3. For IF frequencies significantly different than 83MHz, the component values must be altered accordingly. LO Drive Level: Resistor R1 can be replaced by an inductor of 4.7nH and C13 should be adjusted to achieve a good return loss at the LO port. Under this condition, the mixer will operate with less than -10dBm LO drive. Filter Interface: For system integration where a high impedance filter of 1kΩ is to be cascaded at the mixer IF output, capacitors C5 and C6 need to be changed to 27pF and 1000pF, respectively. December 15, 1994 4 Philips Semiconductors RF Communications Products Product specification SA601 R1 C11 Low voltage LNA and mixer - 1GHz Top View Silk Screen Bottom View Via Layer Figure 2. SA601 Demoboard Layout (Not Actual Size) December 15, 1994 5 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 TYPICAL PERFORMANCE CHARACTERISTICS CH1 S11 1 U FS 4: 63.852 Ω -160.23 Ω 4.9269 pF 200.000 000 MHz 1: 21.286 Ω -12.381 Ω 900 MHz 2: 27.471 Ω -35.48 Ω 600 MHz 36.43 Ω -70.445 Ω 400 MHz 3: START CH1 S22 200.000 000 1 U MHz FS STOP 4: 99.543 Ω 1200.000 000 -85.949 Ω MHz 8.937 pF 200.000 000 MHz 1: 2: 3: START 200.000 000 MHz STOP 1200.000 000 Figure 3. LNA Input and Output Match (at Device Pin) December 15, 1994 6 MHz 31.48 Ω -14.217 Ω 900 MHz 44.82 Ω -30.191 Ω 600 MHz 58.725 Ω -50.83 Ω 400 MHz Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) CH1 S21 7 U FS 4: -150.58 ° 6.2863 U 200.000 000 MHz 1: 3.2504U 91.219 ° 900 MHz 2: 4.6877U 112.03 ° 600 MHz 5.3895U 130.33 ° 400 MHz 3: CH1 START 200.000 000 S12 100 mU FS MHz STOP 4: 1200.000 000 MHz 35.343 mU -76.128 ° 200.000 000 MHz 1: 89.561mU 61.127 ° 900 MHz 2: 74.51mU 64.608 ° 600 MHz 58.082mU 67.162 ° 400 MHz 3: START 200.000 000 MHz STOP 1200.000 000 MHz Figure 4. LNA Transmission and Isolation Characteristics (at Device Pin) December 15, 1994 7 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) CH1 S11 1 U FS 4: 10.867Ω 1.6426Ω 1.2543 nH 200.000 000 MHz 1: START 200.000 000 MHz STOP 1200.000 000 6.7168 Ω 9.5952 Ω 900 MHz MHz Figure 5. Mixer RF Input Match (at Device Pin) Table 1. Typical LNA and Mixer S-Parameters LNA Mixer f S11 S22 S21 S12 S11 200MHz 63.852Ω – j 160.23Ω 99.543Ω – j 85.949Ω 6.2863U ∠ 150.58° 35.343mU ∠ 76.128° 10.867Ω + j 1.6426Ω 300MHz 44.879Ω – j 101.69Ω 73.387Ω – j 67.707Ω 5.8096U ∠ 140.47° 47.946mU ∠ 71.169° 10.4Ω + j 3.4609Ω 400MHz 36.43Ω – j 70.445Ω 58.725Ω – j 50.83Ω 5.3895U ∠ 130.33° 58.082mU ∠ 67.162° 10.067Ω + j 4.897Ω 500MHz 30.395Ω – j 48.393Ω 49.928Ω – j 38.813Ω 5.0428U ∠ 120.5° 66.44mU ∠ 66.388° 9.394Ω + j 6.0142Ω 600MHz 27.471Ω – j 35.48Ω 44.82Ω – j 30.191Ω 4.6877U ∠ 112.03° 74.51mU ∠ 64.608° 8.8945Ω + j 7.2227Ω 700MHz 24.428Ω – j 25Ω 39.268Ω – j 24.502Ω 4.2409U ∠ 104.44° 82.235mU ∠ 65.002° 8.1353Ω + j 8.1597Ω 800MHz 22.434Ω – j 17.255Ω 34.664Ω – j 18.59Ω 3.7491U ∠ 97.765° 86.582mU ∠ 62.743° 7.976Ω + j 9.1958Ω 900MHz 21.286Ω – j 12.381Ω 31.48Ω – j 14.217Ω 3.2504U ∠ 91.219° 89.561mU ∠ 61.127° 6.7168Ω + j 9.5952Ω 1000MHz 20.261Ω – j 8.7109Ω 27.887Ω – j 10.77Ω 2.8785U ∠ 84.957° 95.135mU ∠ 60.539° 6.2393Ω + j 10.271Ω 1100MHz 19.718Ω – j 6.252Ω 25.741Ω – j 8.2607Ω 2.5752U ∠ 82.893° 97.348mU ∠ 62.202° 6.0791Ω + j 10.571Ω 1200MHz 19.101Ω – j 4.9316Ω 23.584Ω – j 6.2715Ω 2.1386U ∠ 80.257° 96.558mU ∠ 61.563° 5.8185Ω + j 10.288Ω December 15, 1994 8 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Mixer RF Input Match vs. Frequency (VCC = 3V) ICC vs. VCC and Temperature 9 CH1 S 11 log MAG 2 dB/ REF -5 dB 8.5 8 7.5 Icc (mA) -40°C 7 25°C –40°C 25°C +85°C 6.5 85°C 6 5.5 5 2.5 3 3.5 4 4.5 5 5.5 VCC (V) START 800.000 000 MHz LNA Gain (S21) vs. Frequency (VCC = 3V) CH1 S 21 log MAG STOP 1 200. 000 000 MHz LNA Isolation (S12) vs. Frequency (VCC = 3V) CH1 S 12 1 dB/ REF 10 dB log MAG 5 dB/ REF -10 dB 85°C 25°C -40°C -40°C 25°C 85°C START 800.000 000 MHz CH1 S 11 START 800.000 000 MHz STOP 1 200. 000 000 MHz LNA Input Match (S11) vs. Frequency (VCC = 3V) log MAG STOP 1 200. 000 000 MHz LNA Output Match (S22) vs. Frequency (VCC = 3V) CH1 S 22 1 dB/ REF -10 dB log MAG 3 dB/ REF -10 dB -40°C 25°C 85°C -40°C 25°C 85°C START 800.000 000 MHz December 15, 1994 START 800.000 000 MHz STOP 1 200. 000 000 MHz 9 STOP 1 200. 000 000 MHz Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 Mixer Gain @ 83MHz vs. VCC and Temperature Mixer IP3 @ 83MHz vs. VCC and Temperature 3 7 –40°C 2 25°C –40°C 25°C 6.5 +85°C +70°C 1 +85°C GAIN (dB) GAIN (dB) 0 6 –1 –2 –3 –4 5.5 –5 –6 –7 5 2.5 3 3.5 4 4.5 5 5.5 2.5 3 3.5 4 4.5 5 5.5 VCC (V) VCC (V) Mixer NF @ 83MHz vs. VCC and Temperature 12 LO to Mixer in Feedthrough vs. VCC –36 –40°C 25°C 11.5 +85°C –37 10.5 dB NF (dB) 11 –38 10 –39 9.5 –40 9 2.5 2.5 3 3.5 4 4.5 5 3 3.5 5.5 4 4.5 5 5.5 VCC (V) VCC (V) LO to LNA Input Feedthrough vs. VCC Mixer Input to LO Feedthrough vs. VCC –36 –20 –21 –37 dB dB –22 –38 –23 –39 –24 –25 –40 2.5 3 3.5 4 4.5 5 2.5 5.5 VCC (V) December 15, 1994 3 3.5 4 VCC (V) 10 4.5 5 5.5 Philips Semiconductors RF Communications Products Product specification Low voltage LNA and mixer - 1GHz SA601 Mixer RF Feedthrough vs. VCC LO Feedthrough to IF vs. VCC –23 –5 –24 dB dB –6 –25 –7 –26 –8 –27 2.5 2.5 3 3.5 4 4.5 5 3 3.5 4 5.5 4.5 5 5.5 VCC (V) VCC (V) LNA Gain vs. VCC and Temperature LNA Output to Mixer Input vs. VCC 12.50 –38 –40°C 25°C 12.00 –40 GAIN (dB) dB –39 +85°C 11.50 –41 11.00 –42 2.5 3 3.5 4 4.5 5 5.5 VCC (V) 10.50 2.5 3 3.5 4 4.5 5 5.5 VCC (V) LNA IP3 vs. VCC and Temperature 4.00 LNA NF vs. VCC and Temperature 2.50 2.00 2.00 1.50 –2.00 dB dB 0.00 –4.00 1.00 –40°C –6.00 –40°C 25°C 25°C +85°C +85°C 0.50 –8.00 –10.00 2.5 3 3.5 4 4.5 5 0.00 5.5 2.5 VCC (V) December 15, 1994 3 3.5 4 VCC (V) 11 4.5 5 5.5