PHILIPS SA611DK

INTEGRATED CIRCUITS
SA611
1GHz low voltage LNA and mixer
Product specification
Supersedes data of 1997 Nov 07
IC17 Data Handbook
1999 Mar 26
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
DESCRIPTION
PIN CONFIGURATION
The SA611 is a combined low-noise amplifier, and mixer designed
for high-performance low-power communication systems from
800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure
at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+7.0dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
PD1
1
20 MIXER OUT
PD2
2
19 MIXER OUT
GND
3
18 GND
LO OUT
4
17 MIXER IN
GND
5
16 GND
FEATURES
• Low current consumption
• Outstanding gain and noise figure
• Excellent gain stability versus temperature and supply voltage
• LNA and mixer power down capability
GND
6
15 LNA IN
GND
7
14 GND
GND
8
13 LNA OUT
GND
9
12 VCC
GND 10
11 GND
SR00124
Figure 1. Pin Configuration
APPLICATIONS
• 900MHz cellular and cordless front-end
• Spread spectrum receivers
• RF data links
• UHF frequency conversion
• Portable radio
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
-40 to +85°C
SA611DK
SOT266–1
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
MIXER
OUT
20
10pF
MIXER
OUT
GND
19
18
MIXER
IN
17
GND
LNA
IN
GND
LNA
OUT
VCC
GND
16
15
14
13
12
11
10
10pF
LNA
1
2
3
4
5
6
7
8
9
PD1
PD2
GND
LO
OUT
GND
GND
GND
GND
GND
GND
SR00125
Figure 2. SA611 Block Diagram
1999 Mar 26
2
853-1886 21103
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
voltageNO TAG
VCC
Supply
VIN
Voltage applied to any other pin
PD
Power dissipation, TA = 25°C (still air)NO TAG
20-Pin Plastic SSOP
RATING
UNITS
-0.3 to +6
V
-0.3 to (VCC + 0.3)
V
980
mW
TJMAX
Maximum operating junction temperature
150
°C
PMAX
Maximum power input/output
+20
dBm
TSTG
Storage temperature range
–65 to +150
°C
NOTE:
1. Transients exceeding 8V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
RATING
UNITS
Supply voltage
2.7 to 5.5
V
TA
Operating ambient temperature range
-40 to +85
°C
TJ
Operating junction temperature
-40 to +105
°C
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Full power-on
8.3
mA
LNA powered-down
owered-down
52
5.2
mA
ICC
Supply
Su
ly current
VT
PD logic threshold voltage
VIH
Logic 1 level
VIL
Logic 0 level
IIL
PD1 input current
Enable = 0.4V
10
µA
IIH
PD2 input current
Enable = 2.4V
10
µA
Full power-down
1999 Mar 26
3
µA
20
1.2
1.6
1.8
V
2.0
VCC
V
–0.3
0.8
V
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, TA = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
–3
TYP
+3
UNITS
Low Noise Amplifier
fRF
RF input frequency range
S21
Amplifier gain
15
dB
S21
Amplifier gain in power-down mode
-28
dB
∆S21/∆T
Gain temperature sensitivity enabled
∆S21/∆f
Gain frequency variation
800
1000
MHz
0.006
dB/°C
800MHz - 1.0GHz
±0.013
dB/MHz
@ 881 MHz
-28
dB
With ext. impedance matching
S12
Amplifier reverse isolation
S11
Amplifier input match
-10
dB
S22
Amplifier output match
-10
dB
P-1dB
Amplifier input 1dB gain compression
-20
dBm
IP3
Amplifier input third order intercept
-7
dBm
NF
Amplifier noise figure
1.7
dB
tON
Amplifier turn-on time (Enable Lo → Hi)
120
µs
tOFF
Amplifier turn-off time (Enable Hi → Lo)
0.3
µs
Mixer
PGC
Mixer power conversion gain: RP = RL = 1.2kΩ,
fRF = 881MHz, fLO = 964MHz,
fIF = 83MHz
8.7
dB
S11M
Mixer input match
Ext. impedance matching req.
-10
dB
NFM
Mixer SSB noise figure
P-1dB
Mixer input 1dB gain compression
IP3M
Mixer input third order intercept
IP2INT
Mixer input second order intercept
12
dB
-14.5
dBm
7.0
dBm
15
dBm
PRFM-IF
Mixer RF feedthrough
RFIN = -28dBm
-45
dBm
PLO-IF
LO feedthrough to IF
LO = -0dBm
-23
dBm
PLO-RFM
LO to mixer input feedthrough
-36
dBm
PLO-RF
LO to LNA input feedthrough
-38
dBm
Overall System
GSYS
1999 Mar 26
System gain
LNA + Mixer
4
23.0
23.7
24.4
dB
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
Table 1. Power ON/OFF Control Logic
PD1
PD2
0
0
0
1 or open
Full chip power-down
1 or open
0
1 or open
1 or open
Mixer on, LNA power-down
Standby (bias on)
Full chip power-on (default)
C1
100pF
L6
12nH
C3
6.8pF
C2
10nF
L1
560nH
IFOUT
L4
560nH
20
MIXER
OUT
19
MIXER
OUT
C10
2.2pF
18
GND
L3
6.8nH
C8
10nF
C11 10nF
+
–
17
MIXER
IN
C9
0.1µF
C13
33pF
C14
6.8pF
16
GND
VCC
3V
15
LNA
IN
14
GND
13
LNA
OUT
12
VCC
11
GND
GND
6
GND
7
GND
8
GND
9
GND
10
SA611
PD1
1
PD2
2
GND
3
LOOUT
4
GND
5
C12
100pF
VCOOUT
SR00126
Figure 3. SA611 Applications Circuit
1999 Mar 26
5
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
PERFORMANCE CHARACTERISTICS
-13.0
-27.0
-27.5
-13.5
-28.0
85°C
25°C
-14.5
-40°C
-15.0
25°C
-28.5
LNA GAIN (dB)
MIXER 1dB (dBm)
-14.0
-40°C
-29.0
-29.5
85°C
-30.0
-15.5
-30.5
-16.0
2.5
3
3.5
4
4.5
5
5.5
-31.0
2.5
0
VCC (V)
Mixer 1dB Compression vs VCC
3.5
4
VCC (V)
4.5
5
5.5
5
5.5
LNA Gain (Disabled) vs VCC
10.0
-2
9.0
-40°C
-3
8.0
-4
7.0
-5
25°C
6.0
LNA IP3 (dBm)
MIXER IP3 (dBm)
3
5.0
85°C
4.0
-6
85°C
-7
-8
3.0
-9
2.0
-10
1.0
-11
0.0
-12
2.5
25°C
-40°C
2.5
3
3.5
4
VCC (V)
4.5
5
5.5
3
3.5
4
VCC (V)
4.5
LNA IP3 vs VCC
Mixer IP3 vs VCC
-15
-16
-17
LNA 1dB (dBm)
-18
85°C
-19
-20
25°C
-21
-22
-40°C
-23
-24
-25
2.5
3
3.5
4
VCC (V)
4.5
5
5.5
LNA 1dB Compression vs VCC
SR01249
Figure 4.
1999 Mar 26
6
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
PERFORMANCE CHARACTERISTICS
9.8
-35
9.4
-36
9.0
-37
-38
LO to LNA IN (dBm)
8.6
Icc (mA)
25°C
8.2
85°C
7.8
7.4
7.0
25°C
-40°C
-39
-40
85°C
-41
-42
-40°C
-43
6.6
-44
6.2
-45
2.5
5.8
2.5
3
3.5
4
VCC (V)
4.5
5
3
5.5
3.5
4
VCC (V)
4.5
5
5.5
LO to LNA In Feedthrough vs VCC
ICC vs VCC and Temperature
10.0
-20
9.5
-21
-40°C
9.0
-22
25°C
8.0
-23
LO to IF (dBm)
MIXER GAIN (dB)
8.5
85°C
7.5
7.0
6.5
-40°C
-24
-25
-26
25°C
85°C
-27
6.0
-28
5.5
-29
5.0
2.5
3
3.5
4
VCC (V)
4.5
5
-30
2.5
5.5
Mixer Power Gain vs VCC
3
3.5
4
VCC (V)
4.5
5
5.5
LO to IF Feedthrough vs VCC
–31.0
LO to MIXER IN (dBm)
–33.0
25°C
–35.0
-40°C
–37.0
85°C
–39.0
–41.0
–43.0
–45.0
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
LO to Mixer In Feedthrough vs VCC
SR01250
Figure 5.
1999 Mar 26
7
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
PERFORMANCE CHARACTERISTICS
–42.0
15.6
15.4
–43.0
MIXER IN to IF (dBm)
15.2
–44.0
15.0
25°C
–46.0
25°C
LNA GAIN (dB)
–45.0
-40°C
-40°C
85°C
14.8
14.6
14.4
85°C
14.2
–47.0
14.0
13.8
–48.0
2.5
3
3.5
4
VCC (V)
4.5
5
5.5
13.6
2.5
Mixer In to IF Feedthrough vs VCC
3
3.5
4
VCC (V)
4.5
5
5.5
5
5.5
LNA Gain (Enabled) vs VCC
12.8
2.0
12.4
1.9
12.3
1.8
12.2
85°C
LNA NOISE FIGURE (dB)
MIXER NOISE FIGURE (dB)
85°C
12.1
25°C
12.0
11.4
-40°C
11.3
1.7
1.6
1.5
1.4
1.2
11.1
1.1
3
3.5
4
4.5
5
1.0
2.5
5.5
VCC (V)
3
3.5
4
4.5
VCC (V)
Mixer Noise Figure vs VCC
LNA Noise Figure vs VCC
Figure 6.
1999 Mar 26
-40°C
1.3
11.2
11.0
2.5
25°C
8
SR01251
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
CH2
S11
SA611
1 U FS
1:
40.1 Ω
-129.6 Ω
200 MHz
2:
24.0 Ω
-62.9 Ω
400 MHz
3:
18.6 Ω
-37.4 Ω
600 MHz
4:
14.1 Ω
10.5 pF
-16.7 Ω
900 MHz
4
1
3
2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
A. S11 DATA
CH1
S22
1 U FS
1:
40.5 Ω
-28.2 Ω
700 MHz
2:
36.1 Ω
-12.4 Ω
800 MHz
3:
34.7 Ω
3.5 Ω
900 MHz
4:
34.9 Ω
3.74 Ω
661.4 pH
900 MHz
4
1
2
3
START
700. 000 000 MHz
STOP
B. S22 DATA
Figure 7. Typical S11 of LNA at 3V
1999 Mar 26
9
1 200. 000 000 MHz
SR01252
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
S22
CH1
SA611
1 U FS
1:
40.5 Ω
-28.2 Ω
700 MHz
2:
36.1 Ω
-12.4 Ω
800 MHz
3:
34.7 Ω
3.5 Ω
900 MHz
4:
34.9 Ω
3.74 Ω
661.4 pH
900 MHz
4
1
2
3
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01253
Figure 8. Typical S22 of LNA at 3V
CH1
S21
10 U FS
1:
6.7 U
142.5 °
200 MHz
2:
5.9 U
112.3 °
400 MHz
3:
5.9 U
78.1 °
600 MHz
4:
4.5 U
21.2°
900 MHz
3
2
1
4
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01254
Figure 9. Typical S21 of LNA at 3V
1999 Mar 26
10
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
CH2
S12
SA611
50 mU FS
4
1:
1.9 mU
83.0 °
200 MHz
2:
1.6 mU
133.5 °
400 MHz
3:
11.4 mU
141.5 °
600 MHz
4:
27.9 mU
106.1°
900 MHz
3
21
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01255
Figure 10. Typical S12 of LNA at 3V
1999 Mar 26
11
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
CH1
S11
SA611
1 U FS
1:
122.8 Ω
-144.9 Ω
200 MHz
2:
58.0 Ω
-86.8 Ω
400 MHz
3:
45.9 Ω
-62.3 Ω
600 MHz
4:
26.6 Ω
-43.2 Ω
4.085 pF
900 MHz
1
4
3
START
100. 000 000 MHz
2
STOP
1 200. 000 000 MHz
SR01256
Figure 11. Typical S11 of Mixer at 3V
1999 Mar 26
12
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
Table 2. Typical S-Parameters of LNA at 3V
LNA
Freq (MHz)
|S11|
(U)
<S11 (deg)
|S21|
(U)
<S21 (deg)
|S12|
(U)
<S12 (deg)
|S22|
(U)
100
122
0.86
-20
7.4
160
0.001
91.91
0.59
-9.62
0.86
-24
7.1
156
0.001
62
0.58
-11.71
144
0.85
-28
7.0
151
0.001
105.42
0.58
-13.86
166
0.83
-32
6.9
148
0.000
91.65
0.57
-15.89
188
0.82
-36
6.8
144
0.002
100.23
0.57
-17.80
210
0.81
-41
6.7
140
0.002
73.57
0.56
-20.05
232
0.80
-45
6.6
136
0.002
99.70
0.55
-22.37
254
0.79
-48
6.5
133
0.001
84.00
0.54
-24.60
276
0.78
-52
6.4
130
0.001
103.18
0.53
-26.89
298
0.76
-56
6.3
126
0.002
94.33
0.52
-28.72
320
0.75
-59
6.3
123
0.002
66.98
0.51
-30.98
342
0.73
-63
6.2
119
0.002
108.53
0.50
-32.79
364
0.71
-66
6.1
116
0.002
118.13
0.48
-34.68
386
0.70
-69
6.0
113
0.001
103.4
0.47
-36.06
408
0.69
-72
5.9
111
0.001
175.94
0.46
-36.64
430
0.68
-76
5.9
109
0.004
174.1
0.45
-37.21
452
0.69
-78
6.0
106
0.006
162.02
0.46
-38.41
474
0.68
-82
6.1
102
0.007
160.07
0.47
-41.54
496
0.67
-85
6.1
97
0.008
153.6
0.47
-45.75
518
0.66
-89
6.1
93
0.010
146.17
0.46
-50.35
540
0.65
-92
6.1
89
0.009
142.13
0.45
-54.73
562
0.63
-96
6.1
85
0.010
138.49
0.43
-59.16
584
0.62
-99
6.0
81
0.011
146.17
0.42
-63.93
606
0.62
-102
5.9
77
0.011
140.55
0.40
-68.56
628
0.61
-104
5.8
72
0.013
137.2
0.38
-73.48
650
0.61
-107
5.7
69
0.013
130.62
0.36
-78.19
672
0.60
-109
5.7
65
0.016
129.77
0.34
-83.75
694
0.60
-112
5.6
61
0.016
131.94
0.31
-89.81
716
0.59
-115
5.5
57
0.017
128.67
0.29
-96.92
738
0.59
-118
5.5
53
0.019
127.53
0.27
-104.48
760
0.59
-121
5.3
48
0.021
123.42
0.24
-112.81
782
0.59
-124
5.3
44
0.021
122.31
0.22
-122.41
804
0.59
-126
5.1
40
0.022
119.52
0.21
-132.81
826
0.59
-129
5.0
36
0.024
118.29
0.19
-145.39
848
0.59
-132
4.9
31
0.026
115.98
0.18
-159.13
870
0.59
-135
4.8
26
0.027
111.9
0.17
-175.11
892
0.59
-138
4.6
22
0.028
108.11
0.18
169.02
914
0.59
-142
4.5
18
0.028
105.92
0.19
154.96
936
0.59
-144
4.3
14
0.028
106.13
0.20
141.94
958
0.59
-148
4.2
9
0.030
99.79
0.22
130.27
980
0.59
-151
4.0
4
0.031
99.30
0.24
119.5
1002
0.59
-153
3.8
0
0.031
94.81
0.26
110.61
1024
0.59
-157
3.6
-2
0.032
90.91
0.28
102.16
1046
0.59
-160
3.5
-6
0.032
85.65
0.30
94.98
1068
0.59
-164
3.3
-10
0.033
86.10
0.33
88.45
1090
0.59
-167
3.2
-14
0.033
80.59
0.35
82.47
1112
0.59
-170
3.0
-18
0.031
79.18
0.36
77.17
1134
0.58
-172
2.8
-22
0.030
46.32
0.38
71.98
1156
0.58
-175
2.7
-25
0.031
78.57
0.39
67.45
1178
0.57
-178
2.5
-28
0.031
73.66
0.41
62.73
1200
0.57
178
2.4
-31
0.029
71.78
0.42
58.87
1999 Mar 26
13
<S22
(deg)
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
Table 3. Typical S-Parameters of Mixer at 3V
Mixer
Freq (MHz)
|S11|
(U)
100
122
Mixer
<S11 (deg)
Freq (MHz)
|S11|
(U)
0.73
-11
672
0.54
-65
0.73
-147
694
0.54
-67
144
0.72
-16
716
0.54
-69
166
0.72
-19
738
0.54
-71
188
0.72
-21
760
0.54
-73
210
0.71
-24
782
0.55
-76
232
0.70
-27
804
0.55
-78
254
0.70
-29
826
0.55
-80
276
0.69
-32
848
0.55
-82
298
0.68
-34
870
0.55
-85
320
0.67
-37
892
0.56
-87
342
0.66
-39
914
0.55
-90
364
0.64
-42
936
0.56
-93
386
0.63
-–44
958
0.56
-96
408
0.62
-46
980
0.56
-98
430
0.61
-48
1002
0.56
-101
452
0.59
-50
1024
0.57
-104
474
0.58
-52
1046
0.57
-106
496
0.57
-53
1068
0.57
-110
518
0.56
-54
1090
0.57
-112
540
0.55
-56
1112
0.57
-115
562
0.55
-57
1134
0.57
-118
584
0.54
-59
1156
0.57
-121
606
0.54
-61
1178
0.57
-124
628
0.54
-62
1200
0.57
-127
650
0.54
-64
1999 Mar 26
14
<S11 (deg)
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
1999 Mar 26
15
SOT266-1
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 03-99
Document order number:
1999 Mar 26
16
9397 750 05473