Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features DBS mixer application to 12 GHz ● Low noise figure ● Low barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BAT 15-099 S5 Q62702-A66 Pin Configuration Package1) P-SOT-143-4-6 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 4 V Forward current IF 110 mA Power dissipation, TS ≤ 55 ˚C Ptot 100 mW Storage temperature range Tstg – 55 … + 150 ˚C Operating temperature range Top – 55 … + 150 Junction - ambient2) Rth JA ≤ 1090 Junction - soldering point Rth JS ≤ 930 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 01.97 BAT 15-099 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4 – – – – 0.23 0.32 – – Breakdown voltage IR = 5 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA VF Forward voltage matching IF = 10 mA ∆VF – – 20 mV Diode capacitance VR = 0, f = 1 MHz CT – – 0.35 pF Forward resistance IF = 10 mA/50 mA RF – 5.5 – Ω Semiconductor Group 2 V BAT 15-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina If Reverse current IR = f (VR) Semiconductor Group Diode capacitance CT = f (VR) f = 1 MHz 3 BAT 15-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = 50 Ω) f I = 0.02 mA I = 0.05 mA I = 0.1 mA I = 0.2 mA I = 0.5 mA GHz MAG ANG MAG ANG MAG ANG MAG ANG MAG ANG 1 2 3 4 5 6 7 8 9 10 11 12 0.94 0.93 0.92 0.91 0.91 0.91 0.91 0.91 0.91 0.90 0.89 0.88 0.87 0.88 0.86 0.84 0.84 0.84 0.84 0.84 0.83 0.83 0.80 0.76 0.77 0.77 0.75 0.72 0.72 0.73 0.73 0.73 0.71 0.71 0.70 0.62 0.59 0.58 0.58 0.51 0.53 0.53 0.54 0.55 0.53 0.51 0.45 0.39 0.19 0.15 0.13 0.11 0.15 0.18 0.20 0.81 0.18 0.14 0.09 0.14 – 16.4 – 33.8 – 53.8 – 74.3 – 96.6 – 115.4 – 131.0 – 143.0 – 155.6 – 167.3 + 175.5 + 175.5 – 16.6 – 33.8 – 54.5 – 75.3 – 97.6 – 116.7 – 132.3 – 144.5 – 150.2 – 169.7 + 172.6 + 146.5 S11 = f (f, I) Semiconductor Group 4 – 16.4 – 34.5 – 54.1 – 76.4 – 99.1 – 118.7 – 134.1 – 146.8 – 159.7 – 178.8 + 170.0 + 142.8 – 17.2 – 35.2 – 56.1 – 78.4 – 102.3 – 122.9 – 138.1 – 150.5 – 163.9 – 175.8 + 164.9 + 134.2 – 16.7 – 36.1 – 64.8 – 104.8 – 135.7 – 160.9 – 168.8 + 179.4 + 179.4 + 151.2 + 105.5 + 43.6