BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code (tape and reel) Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777 A A A C – C A C C C/A C/C A/A 53 54 55 56 Package SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 4 V Forward current IF 130 mA Total power dissipation TS ≤ 60 °C Ptot 150 mW Junction temperature Tj 150 °C Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Junction-ambient1) Rth JA ≤ 750 K/W Junction-soldering point Rth JS ≤ 590 K/W Thermal Resistance 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 03.96 BAT 17… Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Breakdown voltage IR = 10 µA V(BR) Reverse current VR = 3 V VR = 3 V, TA = 60 °C VR = 4 V IR Forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA VF Diode capacitance VR = 0 V f = 1 MHz CT Differential forward resistance IF = 5 mA, f = 10 kHz rS Semiconductor Group V 4 – – µA – – – – – – 0.25 1.25 10 mV 200 250 350 275 340 425 350 450 600 pF 0.4 0.55 0.75 Ω – 2 8 15 BAT 17… Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance RF = f (IF) f = 10 kHz Semiconductor Group 3 BAT 17… Forward current IF = f (TA; TS*) *Package mounted on aluminum Semiconductor Group 4