Product Overview

Product Overview
NGTB75N60FL2: IGBT 600V 75A FS2 Solar/UPS
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5µs Short-Circuit Capability
Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTB75N60FL2WG
Pb-free
Active
600
1.7
1
1.5
80
8
310
5
595
Yes
75
2.2
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247