Product Overview

Product Overview
NGTG30N60FWG: IGBT, 600 V, 30 A, PFC, Low Frequency
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior
performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
Benefits
• Optimized for Very Low VCEsat
• Low Switching Loss
• 5µs Short Circuit Capability
• Reduces System Power Dissipation
Applications
• Solar Inverters
• Motor Drives
• Uninterruptible Power Supplies (UPS)
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
NGTG30N60FWG
Pb-free
Active
600
1.45
0.65
0.65
30
Trr
Typ
(ns)
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
170
5
167
No
TO247-3