Product Overview NGTG50N60FWG: IGBT, 600 V, 50 A, PFC, Low Frequency For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Benefits • Optimized for Very Low VCEsat • Low Switching Loss • 5µs Short Circuit Capability • Reduces System Power Dissipation Applications • Solar Inverters • Motor Drives • Uninterruptible Power Supplies (UPS) Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) Eoff Typ (mJ) Eon Typ (mJ) NGTG50N60FWG Pb-free Active 600 1.45 1.2 1.1 50 Trr Typ (ns) Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) PD Max (W) CoPack Pack age aged Type Diode 310 5 223 No TO247-3