BSP 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 92 -240 V -0.2 A 20 Ω SOT-223 BSP 92 Type BSP 92 Ordering Code Q62702-S653 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values -240 V -240 Gate source voltage VGS ± 20 Gate-source peak voltage,aperiodic Vgs ± Continuous drain current ID TA = 35 °C A -0.2 IDpuls DC drain current, pulsed TA = 25 °C -0.8 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1.7 1 18/02/1997 BSP 92 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 72 Thermal resistance, junction-soldering point 1) RthJS ≤ 12 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -240 - - -0.8 -1.5 -2 VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current V IDSS µA VDS = -240 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -240 V, VGS = 0 V, Tj = 125 °C - -10 -100 VDS = -60 V, VGS = 0 V, Tj = 25 °C - - -0.2 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance - -10 -100 Ω RDS(on) VGS = -10 V, ID = -0.2 A Semiconductor Group nA - 2 12 20 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -0.2 A Input capacitance 0.06 pF - 95 130 - 20 30 - 10 15 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 0.13 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Rise time - 8 12 - 25 40 - 25 33 - 42 55 tr VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - -0.2 - - -0.8 VSD VGS = 0 V, IF = -0.4 A, Tj = 25 °C Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 -0.9 -1.2 18/02/1997 BSP 92 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 2.0 -0.22 W A 1.6 ID -0.18 -0.16 1.4 -0.14 1.2 -0.12 1.0 -0.10 0.8 -0.08 0.6 -0.06 0.4 -0.04 0.2 -0.02 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 18/02/1997 BSP 92 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.45 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 65 Ptot = 2W lk j i Ω h A a -2.0 -0.35 RDS (on) b -2.5 g c -3.0 -0.30 b c d e f 55 VGS [V] ID a 50 45 d -3.5 40 e -4.0 -0.25 f -4.5 35 f g -5.0 30 h -6.0 -0.20 e -0.15 d i -7.0 j -8.0 25 20 k -9.0 g l -10.0 15 -0.10 c -0.05 10 b 5 a 0.00 0 -2 -4 -6 -8 -10 h j i k VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -2.0 g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 0 V -14 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 VDS A -0.36 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.20 -0.40 S A ID gfs 0.16 -0.30 0.14 -0.25 0.12 0.10 -0.20 0.08 -0.15 0.06 -0.10 0.04 -0.05 0.02 0.00 0 0.00 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Semiconductor Group 6 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A ID -0.40 18/02/1997 BSP 92 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.2 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA 50 -4.6 Ω V -4.0 RDS (on) 40 VGS(th) 35 -3.6 -3.2 30 -2.8 -2.4 98% 25 98% -2.0 20 15 typ -1.6 typ -1.2 2% 10 -0.8 5 -0.4 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 Tj °C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 -10 0 pF A C IF 10 2 -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 18/02/1997 BSP 92 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) parameter : D = 0.01, TC=25°C -285 V -275 V(BR)DSS -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 18/02/1997