BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A 4.5 IDpuls Pulsed drain current TC = 25 °C 18 Avalanche current,limited by Tjmax IAR 5.1 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 18 mJ EAS ID = 5.1 A, VDD = 50 V, RGS = 25 Ω L = 62 mH, Tj = 25 °C 850 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 01/97 BUZ 358 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 1000 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C - - 1 VDS = 800 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 3.2 A Semiconductor Group nA - 2 2.3 2.6 01/97 BUZ 358 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A Input capacitance 2.5 pF - 1700 2200 - 170 300 - 80 120 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 5.2 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω Rise time - 30 45 - 100 160 - 400 520 - 130 170 tr VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω Semiconductor Group 3 01/97 BUZ 358 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 18 V 1 1.2 trr µs - 1.5 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 10 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 6.5 - 01/97 BUZ 358 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 130 5.0 W A 110 Ptot ID 100 4.0 3.5 90 80 3.0 70 2.5 60 2.0 50 1.5 40 30 1.0 20 0.5 10 0.0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W A t = 26.0µs p ID 10 1 ZthJC 10 0 100 µs 10 -1 /I D D = 0.50 DS 1 ms =V 0.20 DS (on ) 0.10 R 10 0 0.05 10 -2 10 ms 0.02 0.01 single pulse 10 -1 10 0 10 1 10 2 DC 3 V 10 10 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 01/97 0 BUZ 358 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs l 10 8.0 Ptot = 125W kj i f hg e a d A Ω VGS [V] ID 8 7 c 6 5 4 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 b i 8.0 j 9.0 b RDS (on) 6.0 5.0 4.0 c d e f gh i j k 3.0 k 10.0 3 l 20.0 2.0 2 a 1.0 VGS [V] = 1 a 4.5 4.0 0 0 10 20 30 40 50 V 0.0 0.0 65 b 5.0 1.0 c 5.5 2.0 d 6.0 e f 6.5 7.0 3.0 g 7.5 4.0 h i j k 8.0 9.0 10.0 20.0 5.0 6.0 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 6.0 7.0 A S 6.0 5.0 ID 7.5 ID gfs 4.5 5.5 5.0 4.0 4.5 3.5 4.0 3.0 3.5 2.5 3.0 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 01/97 4.0 BUZ 358 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.2 A, VGS = 10 V 13 4.6 Ω V 11 RDS (on) 98% 4.0 VGS(th) 10 3.6 9 3.2 8 2.8 7 2.4 6 typ 2% 2.0 5 1.6 98% typ 4 1.2 3 0.8 2 0.4 1 0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss 10 -1 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 01/97 3.0 BUZ 358 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 5.1 A, VDD = 50 V RGS = 25 Ω, L = 62 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 8 A 900 16 mJ EAS V VGS 700 12 600 10 500 0,2 VDS max 8 0,8 VDS max 400 6 300 4 200 2 100 0 20 0 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 100 120 140 160 nC 200 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 1200 V 1160 V(BR)DSS 1140 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 01/97