2N6661 DATA SHEET (03/29/2016) DOWNLOAD

2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
Description
•
•
•
•
•
•
•
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
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•
•
•
•
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where verylow threshold voltage, high breakdown voltage, highinput impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
 2016 Microchip Technology Inc.
DS20005516A-page 1
2N6661
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage ......................................................................................................................................... BVDSS
Drain-to-gate voltage.............................................................................................................................................BVDGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter
Symbol
Min
Typ
Max
Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage
BVDSS
90
-
-
V
VGS= 0V, ID= 10µA
Gate threshold voltage
VGS(th)
0.8
-
2.0
V
VGS= VDS, ID= 1.0mA
∆VGS(th)
-
-3.8
-5.5
Gate body leakage current
IGSS
-
-
100
nA
VGS= ±20V, VDS= 0V
Zero gate voltage drain current
IDSS
-
-
10
µA
VGS= 0V, VDS= Max rating
-
-
500
ID(ON)
1.5
-
-
A
RDS(ON)
-
-
5.0
Ω
-
-
4.0
GFS
170
-
-
VGS(th) change with temperature
On-state drain current
Static drain-to-source on-state
resistance
mV/°C VGS= VDS, ID= 1.0mA (Note 2)
VDS= 0.8 Max Rating,
VGS= 0V, TA= 125°C (Note 2)
VGS= 10V, VDS= 10V
VGS= 5.0V, ID= 0.3A
VGS= 10V, ID= 1.0A
AC Parameters (Note 2)
Forward transconductance
Input capacitance
CISS
-
-
50
Common source output capacitance
COSS
-
-
40
Reverse transfer capacitance
CRSS
-
-
10
Turn-on time
t(ON)
-
-
10
Turn-off time
t(OFF)
-
-
10
VSD
-
1.2
trr
-
350
mmho VDS= 25V, ID= 0.5A
pF
VGS= 0V,
VDS= 24V,
f = 1.0MHz
ns
VDD= 25V, ID= 1.0A,
RGEN= 25Ω
-
V
VGS= 0V, ISD= 1.0A (Note 1)
-
ns
VGS= 0V, ISD= 1.0A (Note 2)
Diode Parameters
Diode forward voltage drop
Reverse recovery time
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
Symbol
Min
Typ
Max
TA
-55
–
150
Units Conditions
Temperature Ranges
Operating and Storage Temperature
DS20005516A-page 2
°C
 2016 Microchip Technology Inc.
2N6661
THERMAL CHARACTERISTICS
Package
ID(1)
continuous
(mA)
ID
pulsed
(A)
Power
Dissipation
@TA = 25°C (W)
IDR(1)
(mA)
IDRM
(A)
TO-39
350
3.0
6.25
350
3.0
Note 1: ID (continuous) is limited by max rated TJ.
Product Summary
2.0
BVDSX/BVDGS
(V)
RDS(ON)
(max) (Ω)
IDSS
(min) (A)
90
4.0
1.5
PIN DESCRIPTION
The locations of the pins are listed in Package Types
and Packaging Information.
TABLE 2-1:
PIN DESCRIPTION
Pin # TO-39
Function
1
SOURCE
2
GATE
3
DRAIN
 2016 Microchip Technology Inc.
DS20005516A-page 3
2N6661
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 shows the switching waveform and test circuit for 2N6661.
10V
VDD
90%
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
FIGURE 3-1:
DS20005516A-page 4
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
Switching Waveforms and Test Circuit
 2016 Microchip Technology Inc.
2N6661
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
3-Lead TO-39
Example
XX
XXXXXXXXXX
YYWW
NNN e4
2N6661
1605
343 e4
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
 2016 Microchip Technology Inc.
DS20005516A-page 5
2N6661
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005516A-page 6
 2016 Microchip Technology Inc.
2N6661
APPENDIX A:
REVISION HISTORY
Revision A (March 2016)
• Converted Supertex Doc #DSFP-2N6661 to
Microchip DS20005516A.
• Minor text changes throughout.
• Update to Features.
 2016 Microchip Technology Inc.
DS20005516A-page 7
2N6661
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
XX
-
X
-
Package Environmental
Options
X
Media
Type
Device:
2N6661 = N-Channel, Enhancement-Mode,
Vertical DMOS FET
Package:
(blank)
= TO-39, 3-lead
Environmental
(blank)
= Lead (Pb)-free/ROHS-compliant package
Media Type:
(blank)
= 500/Bag for TO-39 packages
DS20005516A-page 8
Examples:
a)
2N6661
TO-39 package,
500/bag
 2016 Microchip Technology Inc.
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== ISO/TS16949==
 2016 Microchip Technology Inc.
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ISBN: 978-1-5224-0432-3
DS20005516A-page 9
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DS20005516A-page 10
 2016 Microchip Technology Inc.