MICROSEMI APT58M50JU3

APT58M50JU3
ISOTOP® Buck chopper
MOSFET Power Module
VDSS = 500V
RDSon = 65mΩ Max @ Tj = 25°C
ID = 58A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
D
Features
•
G
S
•
•
•
A
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
A
S
D
G
Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
ISOTOP®
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
500
58
43
270
±30
65
543
42
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APT58M50JU3 – Rev 0 August, 2009
Symbol
VDSS
APT58M50JU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Tj = 25°C
VDS = 500V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 42A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
3
Typ
4
Max
250
1000
65
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
Turn-off Delay Time
Fall Time
pF
340
nC
75
155
60
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
Rise Time
Typ
10800
1164
148
70
ns
155
50
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
VF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
IF = 30A
IF = 60A
IF = 30A
Diode Forward Voltage
trr
Reverse Recovery Time
IF = 30A
VR = 400V
Qrr
Reverse Recovery Charge
di/dt =200A/µs
Min
600
Tj = 25°C
Tj = 125°C
Tc = 90°C
Typ
Max
25
500
Tj = 125°C
Tj = 25°C
30
1.8
2.2
1.5
25
Tj = 125°C
160
Tj = 25°C
35
Tj = 125°C
480
Unit
V
µA
A
2.2
V
ns
nC
Thermal and package characteristics
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Min
Junction to Case Thermal Resistance
Typ
Mosfet
Diode
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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2500
-40
Max
0.23
1.05
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
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APT58M50JU3 – Rev 0 August, 2009
Symbol Characteristic
APT58M50JU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical Mosfet Performance Curve
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
Single P ulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-5
APT58M50JU3 – Rev 0 August, 2009
Thermal Impedance (°C/W)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.25
APT58M50JU3
Low Voltage Output Characteristics
Low Voltage Output Characteristics
250
160
VGS=7,8 &10V
140
ID, Drain Current (A)
TJ=25°C
150
100
TJ=125°C
50
6.5V
120
100
6V
80
5.5V
60
40
20
0
TJ=125°C
0
0
5
10
15
20
0
5
20
25
30
Transfert Characteristics
Normalized RDSon vs. Temperature
125
2.5
VGS=10V
ID=42A
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
15
VDS, Drain to Source Voltage (V)
VDS, Drain to Source Voltage (V)
2
1.5
1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
TJ=125°C
75
50
25
TJ=25°C
0.5
0
25
50
75
100
125
150
0
1
TJ, Junction Temperature (°C)
Gate Charge vs Gate to Source
3
4
5
6
C, Capacitance (pF)
VDS=250V
8
VDS=400V
6
7
Capacitance vs Drain to Source Voltage
100000
VDS=100V
ID=42A
TJ=25°C
10
2
VGS, Gate to Source Voltage (V)
12
VGS, Gate to Source Voltage
10
4
Ciss
10000
1000
Coss
Crss
100
2
10
0
0
60
120
180
240
300
360
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4-5
APT58M50JU3 – Rev 0 August, 2009
ID, Drain Current (A)
VGS=10V
200
APT58M50JU3
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
120
100
80
TJ=125°C
60
40
20
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
TJ=125°C
VR=400V
150
125
60 A
100
30 A
75
15 A
50
3.0
0
200
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
600
1000 1200
1000 1200
30
TJ=125°C
VR=400V
25
60 A
20
15
30 A
15 A
10
5
0
0
200
-diF/dt (A/µs)
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
200
Duty Cycle = 0.5
TJ=175°C
175
40
150
IF(AV) (A)
C, Capacitance (pF)
800
IRRM vs. Current Rate of Charge
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
1.5
TJ=125°C
VR=400V
400
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
125
100
75
50
30
20
10
0
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (°C)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT58M50JU3 – Rev 0 August, 2009
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