APTM100H40FT3G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C Full - Bridge MOSFET Power Module 13 14 Application Q1 • • • • Q3 18 11 22 7 23 8 19 10 Q2 • 4 27 3 30 29 31 15 32 16 R1 28 27 26 25 Features Q4 26 23 22 • • • 20 19 18 29 16 30 15 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • • • • 14 31 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 21 16 140 ±30 480 390 18 Unit V A June, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM100H40FT3G – Rev 0 Symbol VDSS APTM100H40FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 400 4 Max 250 1000 480 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 18A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 7868 825 104 pF 305 nC 55 145 44 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 18A RG = 2.2Ω 40 ns 150 38 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 18A IS = - 18A VR = 100V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.61 4.21 Max 21 16 1.1 25 300 650 Unit A V V/ns ns µC www.microsemi.com 2–5 APTM100H40FT3G – Rev 0 June, 2009 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 16A di/dt ≤ 1000A/µs VDD ≤ 667V Tj ≤ 125°C APTM100H40FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.32 150 125 100 4.7 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTM100H40FT3G – Rev 0 28 17 1 June, 2009 SP3 Package outline (dimensions in mm) APTM100H40FT3G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 35 50 TJ=125°C 40 ID, Drain Current (A) TJ=25°C 30 TJ=125°C 20 10 0 30 VGS=6, 7, 8 &9V 25 20 15 5V 10 4.5V 5 0 0 5 10 15 20 0 5 Normalized RDSon vs. Temperature VGS=10V ID=18A 20 25 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 25 TJ=125°C 20 15 TJ=25°C 10 5 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (°C) 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 12 VGS=10V ID=18A 10 VDS=200V VDS=500V 8 6 VDS=800V 4 2 C, Capacitance (pF) 0 Ciss 10000 1000 Coss 100 Crss 10 1 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 June, 2009 VGS, Gate to Source Voltage 15 Transfert Characteristics 35 3 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 APTM100H40FT3G – Rev 0 ID, Drain Current (A) VGS=10V APTM100H40FT3G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 50 40 TJ=125°C 30 TJ=25°C 20 10 0 0 0.3 0.6 0.9 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100H40FT3G – Rev 0 June, 2009 rectangular Pulse Duration (Seconds)