SUU50N03-12P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU50N03-12P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TA = 25_C Continuous Drain Currenta TA = 100_C Pulsed Drain Current Continuous Source Current (Diode Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy 12.4 40 IS 5 IAS 30 EAS TA = 25_C Operating Junction and Storage Temperature Range A 45 TC = 25_C Maximum Power Dissipation V 17.5 ID IDM Conduction)a Unit mJ 46.8 PD W 6.5a TJ, Tstg _C --55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 18 23 40 50 2.6 3.2 Unit _C/W C/ Notes a. Surface Mounted on FR4 Board, t ≤ 10 sec. Document Number: 72429 S-31872—Rev. A, 15-Sep-03 www.vishay.com 1 SUU50N03-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V A 0.012 0.0138 0.0175 gfs Ω 0.017 VGS = 4.5 V, ID = 15 A Forward Transconductanceb mA 0.010 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 40 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 VDS = 15 V, ID = 20 A 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 140 Gate Resistance Rg 1.5 Total Gate Chargec Qg 28 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 1600 VGS = 0 V, VDS = 25 V, f = 1 MHz Ω 42 nC C 5.0 VDD = 15 V, RL = 0.3 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω td(off) Fall Timec pF p 6.0 VDS = 15 5 V,, VGS = 10 0 V,, ID = 50 A tr Turn-Off Delay Timec 285 tf 9 15 15 25 20 30 12 20 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 25 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 80 80 VGS = 10 thru 5 V 60 40 I D -- Drain Current (A) I D -- Drain Current (A) 60 4V 20 40 TC = 125_C 20 25_C 3V --55_C 0 0 0 1 2 3 4 VDS -- Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS -- Gate-to-Source Voltage (V) Document Number: 72429 S-31872—Rev. A, 15-Sep-03 SUU50N03-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 80 0.05 60 r DS(on)-- On-Resistance ( Ω ) g fs -- Transconductance (S) TC = --55_C 25_C 125_C 40 20 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0.00 0 10 20 30 40 50 0 20 ID -- Drain Current (A) 40 Capacitance Gate Charge V GS -- Gate-to-Source Voltage (V) 10 2000 C -- Capacitance (pF) 80 ID -- Drain Current (A) 2500 Ciss 1500 1000 500 Coss Crss VDS = 15 V ID = 50 A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 6 VDS -- Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 18 24 30 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 15 A I S -- Source Current (A) 1.6 12 Qg -- Total Gate Charge (nC) 1.8 r DS(on)-- On-Resistance ( Ω ) (Normalized) 60 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 --50 1 --25 0 25 50 75 100 125 TJ -- Junction Temperature (_C) Document Number: 72429 S-31872—Rev. A, 15-Sep-03 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD -- Source-to-Drain Voltage (V) www.vishay.com 3 SUU50N03-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 20 Limited by rDS(on) 100 I D -- Drain Current (A) I D -- Drain Current (A) 16 12 8 4 10, 100 ms 10 1 ms 10 ms 100 ms 1 1s 0 10 s TA = 25_C Single Pulse 0.1 dc, 100 s 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS -- Drain-to-Source Voltage (V) TA -- Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72429 S-31872—Rev. A, 15-Sep-03