IRF IRKU91/12AS90

Bulletin I27135 rev. F 10/02
IRKU/V71, 91 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
75 A
95 A
Al203 DBC insulator
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRKU/V71 IRKU/V91
Units
IT(AV) @ 85°C
75
95
A
IT(RMS)
115
150
A
1665
1785
A
ITSM @ 50Hz
I 2t
@ 60Hz
1740
1870
A
@ 50Hz
13.86
15.91
KA2s
@ 60Hz
12.56
14.52
KA2s
138.6
159.1
KA 2√s
I2√t
VRRM range
400 to 1600
TSTG
- 40 to 125
o
C
TJ
- 40 to125
o
C
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1
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
IRKU/V71, 91
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
-
V
V
V
04
400
500
400
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IT(AV)
Max. average on-state
IRKU/V71
IRKU/V91
75
95
current
Units
Conditions
180o conduction, half sine wave,
A
IT(RMS) Max. RMS on-state
current
@TC
115
80
75
Max. peak, one cycle
1665
1785
t=10ms No voltage
non-repetitive on-state
1740
1870
t=8.3ms reapplied
ITSM
current
I2t
I2√t
Max. I2t for fusing
Max. I2√t for fusing (1)
VT(TO) Max. value of threshold
voltage (2)
rt
VTM
DC
°C
1400
1500
1470
1570
t=8.3ms reapplied
1850
2000
t=10ms TJ = 25oC,
A
2100
t=8.3ms no voltage reapplied
15.91
t=10ms No voltage
12.56
14.52
t=8.3ms reapplied
9.80
11.25
t=10ms 100% VRRM
KA2s
8.96
10.27
20.00
t=10ms TJ = 25oC,
15.60
18.30
t=8.3ms no voltage reapplied
138.6
159.1
0.82
0.80
0.85
0.85
3.00
2.40
2.25
1.59
1.58
KA2√s
V
mΩ
Max. peak on-state
150
V
A/µs
t=8.3ms reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
TJ = TJ max
High level (4)
Low level (3)
TJ = TJ max
High level (4)
ITM = π x IT(AV)
TJ = 25°C
IFM = π x IF(AV)
TJ = 25oC, from 0.67 VDRM,
ITM =π x IT(AV), I = 500mA,
g
tr < 0.5 µs, tp > 6 µs
current
IH
Max. holding current
200
IL
Max. latching current
400
2
Initial TJ = TJ max.
17.11
2.90
(1) I2t for time t = I2√t x √t .
x
x
(3) 16.7% x π x IAV < I < π x IAV
Initial TJ = TJ max.
1940
slope resistance (2)
Max. non-repetitive rate
of rise of turned on
t=10ms 100% VRRM
Sinusoidal
half wave,
13.86
Max. value of on-state
voltage
di/dt
150
TC = 85oC
TJ = 25oC, anode supply = 6V,
mA
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(4) I > π x IAV
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IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Triggering
Parameters
IRKU/V71
IRKU/V91
12
12
PG(AV) Max. average gate power
3.0
3.0
IGM
3.0
3.0
PGM
Max. peak gate power
Max. peak gate current
-VGM Max. peak negative
Max. gate voltage
TJ = - 40°C
V
TJ = 25°C
1.7
TJ = 125°C
270
150
Max. gate current
TJ = - 40°C
TJ = 25°C
mA
TJ = 125°C
80
Max. gate voltage
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.25
V
TJ = 125oC,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
IRKU/V71, 91
Units
15
mA
that will not trigger
IGD
A
2.5
required to trigger
VGD
W
4.0
required to trigger
IGT
Conditions
10
gate voltage
VGT
Units
Max. gate current
that will not trigger
Blocking
Parameters
IRRM
Max. peak reverse and
IDRM
off-state leakage current
Conditions
TJ = 125 oC, gate open circuit
at VRRM, VDRM
2500 (1 min)
VINS
RMS isolation voltage
50 Hz, circuit to base, all terminals
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
shorted
TJ = 125oC, linear to 0.67 VDRM,
gate open circuit
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
TJ
Junction operating
temperature range
- 40 to 125
Tstg
Storage temper. range
- 40 to 125
Units
Conditions
°C
RthJC Max. internal thermal
resistance, junction
0.165
0.135
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
5
to heatsink
Nm
busbar
wt
Mounting surface flat, smooth and greased
0.1
3
Approximate weight
110 (4)
Case style
gr (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRKU/V71
IRKU/V91
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Sine half wave conduction
180o
0.06
0.04
120o
0.07
0.05
90o
0.09
0.06
60o
0.12
0.08
Rect. wave conduction
30o
0.18
0.12
180o
0.04
0.03
120o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
Units
°C/W
3
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
Ordering Information Table
Device Code
IRK
U
91
1
2
3
/
16
A
S90
4
5
6
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
IRK.92 types
With no auxiliary cathode
* * Available with no auxiliary cathode.
To specify change:
91 to 92
71 to 72
e.g. : IRKU92/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKU
(1)
+
IRKV
(1)
-
+
-
(2)
(2)
-
+
(3)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRKU/V71, 91 Series
IRK.71.. Series
R thJC (DC) = 0.33 K/W
120
110
Conduction Angle
100
90
30°
60°
80
70
90°
120°
180°
0
10
20
30
40
50
60
70
80
130
IRK.71.. Series
R thJC (DC) = 0.33 K/W
120
110
Conduction Period
100
90
30°
80
70
0
20
RMS Limit
60
40
Conduction Angle
IRK.71.. Series
Per Junction
T J = 125°C
20
0
10
20
30
40
50
60
70
80
100
80
RMS Limit
60
Conduction Period
40
IRK.71.. Series
Per Junction
T J = 125°C
20
0
0
20
1100
1000
900
IRK.71.. Series
Per Junction
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
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60
80
100
120
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial T J= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1
40
Average On-state Current (A)
1200
700
120
DC
180°
120°
90°
60°
30°
120
Average On-state Current (A)
800
100
140
Fig. 3 - On-state Power Loss Characteristics
1300
80
Average On-state Current (A)
80
1400
60
DC
Fig. 2 - Current Ratings Characteristics
100
1500
40
180°
Average On-state Current (A)
180°
120°
90°
60°
30°
1600
60°
90°
120°
Fig. 1 - Current Ratings Characteristics
120
0
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27135 rev. F 10/02
1800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated V RRMReapplied
1600
1400
1200
1000
800
IRK.71.. Series
Per Junction
600
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
5
IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
180°
(Sine)
180°
(Rect)
=
1
0.
W
K/
400
SA
500
h
Rt
0.
2
200
0.5
K
2 x IRK.71.. Series
Single Phase Bridge
Connected
T J = 125°C
100
0
0
20
40
60
W
R
300
lta
e
K/
0.
3
-D
Maximum Total Power Loss (W)
600
K/
W
1 K/
/W
W
2 K/W
0
80 100 120 140 160 180
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
600
=
0.
2
W
0.5
200
3 x IRK.71.. Series
6-Pulse Midpoint
Connection Bridge
T J = 125°C
100
0
50
100
150
200
Total Output Current (A)
250
K/
W
1 K/
0
300
R
0.
3K
/W
300
0
K/
ta
el
-D
60°
(Rect)
Io
W
K/
400
1
0.
Maximum Total Power Loss (W)
A
hS
Rt
500
W
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
6
130
IRK.91.. Series
R thJC (DC) = 0.27 K/W
120
110
Conduction Angle
100
90
30°
60° 90°
120°
80
70
0
20
40
60
80
180°
100
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
130
IRK.91.. Series
R thJC (DC) = 0.27 K/W
120
110
Conduction Period
100
90
30°
60°
90°
120°
80
70
0
20
40
60
80
180°
DC
100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 9 - Current Ratings Characteristics
Fig. 10 - Current Ratings Characteristics
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IRKU/V71, 91 Series
Maximum Average On-state Power Loss (W)
140
180°
120°
90°
60°
30°
120
100
RMS Limit
80
60
Conduction Angle
40
IRK.91.. Series
Per Junction
T J = 125°C
20
0
0
20
40
60
80
100
DC
180°
120°
90°
60°
30°
160
140
120
100
RMS Limit
80
Conduction Period
60
IRK.91.. Series
Per Junction
T J = 125°C
40
20
0
0
20
40
60
80
100 120 140 160
Average On-state Current (A)
Fig. 11 - On-state Power Loss Characteristics
Fig. 12 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1500
1400
1300
1200
1100
1000
900
IRK.91.. Series
Per Junction
800
700
180
Average On-state Current (A)
1
10
1800
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I27135 rev. F 10/02
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125°C
No Voltage Reapplied
Rated VRRM Reapplied
1600
1400
1200
1000
800
IRK.91.. Series
Per Junction
600
0.01
100
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 13 - Maximum Non-Repetitive Surge Current
180°
(Sine)
180°
(Rect)
=
1
0.
0.
2
2 x IRK.91.. Series
Single Phase Bridge
Connected
T J = 125°C
100
0
0
40
80
120
160
Total Output Current (A)
R
0 .5
200
ta
el
300
K/
W
-D
0.3
W
K/
400
SA
500
h
Rt
Maximum Total Power Loss (W)
600
K/
W
K/ W
1 K/
W
2 K/ W
200
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
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IRKU/V71, 91 Series
Bulletin I27135 rev. F 10/02
R th
600
SA
=
1
0.
Io
0.
2
400
0 .5
200
3 x IRK.91.. Series
6-Pulse Midpoint
Connection Bridge
T J = 125°C
100
0
0
40
K/
W
K/W
1 K/ W
80 120 160 200 240 280 320 360
0
Total Output Current (A)
K/
W
R
0.3
300
ta
el
-D
60°
(Rect)
500
W
K/
Maximum Total Power Loss (W)
700
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-state Power Loss Characteristics
1000
Instantaneous On-state Current (A)
Instantaneous On-state Current (A)
1000
100
T J= 25°C
10
T J= 125°C
IRK.71.. Series
Per Junction
1
0.5
1
1.5
2
2.5
3
3.5
100
T J= 25°C
IRK.91.. Series
Per Junction
1
0.5
4
600
I TM = 200 A
100 A
500
50 A
400
20 A
300
10 A
200
100
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - Recovery Charge Characteristics
8
1.5
2
2.5
3
3.5
Fig. 18 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Fig. 17 - On-state Voltage Drop Characteristics
IRK.71.. Series
IRK.91.. Series
T J = 125 °C
1
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
700
T J= 125°C
10
140
120
IRK.71.. Series
IRK.91.. Series
T J = 125 °C
I TM = 200 A
100 A
100
50 A
80
20 A
10 A
60
40
20
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - Recovery Current Characteristics
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IRKU/V71, 91 Series
Transient Thermal Impedance Z thJC (K/W)
Bulletin I27135 rev. F 10/02
1
Steady State Value:
R thJC = 0.33 K/W
R thJC = 0.27 K/W
(DC Operation)
IRK.71.. Series
IRK.91.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 21 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.71../.91.. Series Frequency Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 22 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
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