Bulletin I25171 rev. B 03/94 ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST333S Units 330 A 75 °C 518 A @ 50Hz 11000 A @ 60Hz 11520 A @ 50Hz 605 KA2s @ 60Hz 550 KA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM/V RRM tq range TJ www.irf.com case style TO-209AE (TO-118) 1 ST333S Series Bulletin I25171 rev. B 03/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST333S 50 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel Units 100µs 50Hz 400Hz 840 650 600 450 1280 1280 1040 910 5430 2150 4350 1560 1000Hz 430 230 1090 730 1080 720 2500Hz 140 60 490 250 400 190 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 50 75 50 75 50 75 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST333S Units 330 A 75 °C 518 Max. peak, one half cycle, 11000 non-repetitive surge current 11520 Maximum I2t for fusing DC @ 63°C case temperature A 2 reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 605 t = 10ms No voltage Initial TJ = TJ max 550 t = 8.3ms reapplied KA2s 390 Maximum I2√t for fusing No voltage t = 8.3ms 9700 430 I 2 √t 180° conduction, half sine wave t = 10ms 9250 I 2t Conditions 6050 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST333S Series Bulletin I25171 rev. B 03/94 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Units 1.51 0.91 High level value of forward slope resistance V 0.58 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. 0.58 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. 0.92 IH Conditions ITM= 1040A, TJ = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance rt 2 ST333S mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST333S 1000 Typical delay time Max. turn-off time Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM 1.0 Min 10 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST333S Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA ST333S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST333S Series Bulletin I25171 rev. B 03/94 Thermal and Mechanical Specifications Parameter ST333S Units TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.10 RthCS Max. thermal resistance, case to heatsink 0.03 T Mounting torque, ± 10% 48.5 Nm (425) (Ibf-in) 535 g wt Approximate weight Case style Conditions °C DC operation K/W TO-209AE (TO-118) Mounting surface, smooth, flat and greased Non lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 K/W Conditions T J = TJ max. Ordering Information Table Device Code ST 33 3 S 08 P F M 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 10 M = Stud base metric threads M24 x 1.5 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) dv/dt - tq combinations available dv/dt (V/µs) 10 12 15 t (µs) q 18 20 25 30 20 CN CM CL CP CK --- 50 DN DM DL DP DK --- 100 EN EM EL EP EK --- 200 -FM * FL * FP FK FJ -- 400 --HL HP HK HJ HH *Standard part number. All other types available only on request. 4 www.irf.com ST333S Series Bulletin I25171 rev. B 03/94 Outline Table CERAMIC HOUSING 22 (0.87) MAX. 4.5 (0.18) MAX. MI N. 9 .5 (0 . 37 )M IN . 4.3 (0.17) DIA. WHITE GATE RED SILICON RUBBER (0.078 s.i.) Fast-on Terminals AMP. 280000-1 REF-250 47 (1.85) MAX. RED SHRINK 21 (0.82) MAX. C.S. 50mm 2 245 (9.65) ± 10 (0.39) WHITE SHRINK MAX. 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. 27.5 (1.08) FLEXIBLE LEAD RED CATHODE 22 (0 .86 ) 10.5 (0.41) NOM. SW 45 Case Style TO-209AE (TO-118) 3/4"16 UNF-2A All dimensions in millimeters (inches) 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX. CERAMIC HOUSING 17 (0.67) DIA. 25 (0.98) 3/8"-24UNF-2A 80.5 (3.17) MAX. 27.5 (1.08) All dimensions in millimeters (inches) MAX. 47 (1.85) 21 (0.83) Case Style TO-209AE (TO-118) with top thread terminal 3/8" MAX. 77.5 (3.05) 38 (1.5) DIA. MAX. SW 45 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. www.irf.com 5 ST333S Series Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25171 rev. B 03/94 130 ST333S Series R thJC (DC) = 0.10 K/W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 80 180° 70 0 50 100 150 200 250 300 350 130 ST333S Series R thJC (DC) = 0.10 K/W 120 110 Conduction Period 100 90 80 30° 90° 120° 180° 60 0 100 200 300 400 DC 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 500 e lt -D a R 100 /W Conduction Angle 150 1K 0 .3 200 0.0 RMS Limit 250 = 300 SA R th 350 /W 400 0 .0 8 K/ W 0. 12 K/ W 0 .1 6K / 0. 2 W K/W W K/ 180° 120° 90° 60° 30° 450 3K 0 .0 06 0. Maximum Average On-state Power Loss (W) 60° 70 K /W 0 .5 K/W ST333S Series TJ = 125°C 50 0 0 50 100 150 200 250 300 350 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 700 DC 180° 120° 90° 60° 30° -D ta el K /W R Conduction Period 200 W K/ 300 RMS Limit 01 0. 0. 1 2 400 = 500 0 .0 3K /W 0. 0 6K /W SA th 600 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 0. 2 K/W 0 .3 K/W 0. 5 K /W ST333S Series TJ = 125°C 100 0 0 100 200 300 400 500 Average On-state Current (A) 600 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST333S Series 10000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 9000 8000 7000 6000 5000 ST333S Series 4000 1 10 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I25171 rev. B 03/94 11000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 10000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 9000 No Voltage Reapplied Rated VRRM Reapplied 8000 100 7000 6000 5000 ST333S Series 4000 0.01 0.1 Fig. 5 - Maximum Non-repetitive Surge Current TJ = 25°C TJ = 125°C 1000 ST333S Series 100 0 1 2 3 4 5 6 Fig. 6 - Maximum Non-repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Instantaneous On-state Current (A) 10000 7 1 Steady State Value R thJ C = 0.10 K/W (DC Operation) 0.1 0.01 ST333S Series 0.001 0.001 0.01 Instantaneous On-state Voltage (V) 280 260 TM = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST333S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics www.irf.com 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) I 300 0.1 Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics 320 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 180 I TM 160 140 = 500 A 300 A 200 A 100 A 50 A 120 100 80 ST333S Series TJ = 125 °C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 10 - Reverse Recovery Current Characteristics 7 ST333S Series Bulletin I25171 rev. B 03/94 Peak On-state Current (A) 1E4 500 1000 1E3 400 200 100 50 Hz 1500 2000 2500 400 200 100 500 1000 50 Hz 1500 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 3000 1E2 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 3000 5000 ST333S Series Sinusoidal pulse TC = 50°C tp 1E1 1E1 1E2 tp 1E1 1E41E1 1E4 1E3 ST333S Series Sinusoidal pulse T C = 75°C 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 1000 500 200 100 400 400 1500 3000 ST333S Series Trapezoidal pulse TC = 50°C di/dt = 50A/µs 1E1 1E1 1E2 1000 50 Hz Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM 1500 2000 2500 ST333S Series Trapezoidal pulse TC = 75°C di/dt = 50A/µs 3000 1E1 1E41E1 1E4 1E3 200 100 500 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 1E2 50 Hz 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 500 400 200 1000 2000 2500 200 500 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM 100 50 Hz Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM 1000 1500 3000 2000 ST333S Series Trapezoidal pulse TC = 50°C di/dt = 100A/µs tp 1E1 1E1 50 Hz 400 1500 1E2 100 1E2 1E3 ST333S Series Trapezoidal pulse TC = 75°C di/dt = 100A/µs 2500 3000 1E1 1E41E1 1E4 tp 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 8 www.irf.com ST333S Series Bulletin I25171 rev. B 03/94 ST333S Series Rectangular pulse di/dt = 50A/µs tp 20 joules per pulse 1E4 2 3 5 10 20 joules per pulse 3 1 0.5 1E3 5 10 2 1 0.5 0.3 0.4 0.3 0.2 1E2 0.2 ST333S Series Sinusoidal pulse tp 1E1 1E1 1E2 1E1 1E41E1 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (1) (2) (3) (4) PGM = 10W, PGM = 20W, PGM = 40W, PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 1E5 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST333S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics www.irf.com 9