PHILIPS BU2525DW

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
Collector-emitter voltage peak value
VBE = 0
VCEO
Collector-emitter voltage
(open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
IC
ICM
Ptot
VCEsat
ICsat
ts
PINNING - SOT429
PIN
ICsat = 8.0 A; IB(end) = 1.1 A
PIN CONFIGURATION
MAX.
UNIT
-
1500
V
-
800
V
8
3.0
12
30
125
5.0
4.0
A
A
W
V
A
µs
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
tab
Tmb ≤ 25 ˚C
IC = 8.0 A; IB = 1.6 A
TYP.
collector
c
b
Rbe
2
1
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
12
30
8
12
200
9
125
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
REB
BVEBO
VCEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector emitter-sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IB = 0A;IC = 100mA;
L= 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
72
7.5
800
110
55
13.5
-
218
-
mA
Ω
V
V
5
11
7
1.6
5.0
1.1
9.5
2.0
V
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
deflection circuit)
ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
3.0
0.2
4.0
0.35
µs
µs
ts
tf
Turn-off storage time
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
tfr
TRANSISTOR
IF = 8 A; dIF/dt = 50 A/µs
16
V
VF = 5 V
410
ns
ICsat
ICsat
90 %
IC
DIODE
t
IC
IBend
IB
10 %
tf
t
10us
t
ts
13us
IB
IBend
32us
t
VCE
- IBM
t
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
I
I
F
BU2525DW
1.2
F
VBESAT / V
BU2525A
Tj = 25 C
1.1
Tj = 125 C
1
10%
0.9
time
t fr
V
0.8
IC/IB=
0.7
F
3
0.6
V
5V
V
fr
4
0.5
F
5
0.4
0.1
1
IC / A
time
Fig.3. Definition of anti-parallel diode Vfr and tfr
10
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
+ 150 v nominal
adjust for ICsat
1
VCESAT / V
BU2525A
IC/IB =
0.9
5
0.8
4
0.7
Lc
3
0.6
0.5
Tj = 25 C
0.4
D.U.T.
Tj = 125 C
0.3
LB
IBend
Cfb
0.2
0.1
-VBB
Rbe
0
0.1
10
1
100
IC / A
Fig.4. Switching times test circuit
hFE
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
BU2525D
1.2
100
VBESAT / V
BU2525A
Tj = 25 C
Tj = 25 C
Tj = 125 C
5V
Tj = 125 C
1.1
1
0.9
10
IC=
1V
0.8
8A
6A
5A
4A
0.7
1
0.1
0.6
1
10
0
100
IC / A
Fig.5. Typical DC current gain. hFE = f (IC)
parameter VCE
September 1997
1
2
IB / A
3
4
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
VCESAT / V
10
BU2525DW
BU2525A
Tj = 25 C
110
Tj = 125 C
100
90
Normalised Power Derating
PD%
120
80
70
8A
60
50
1
6A
40
5A
30
IC = 4 A
20
10
0
0.1
0.1
1
IB / A
0
10
Eoff / uJ
40
60
80
100
Tmb / C
120
140
Fig.12. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
1000
20
BU2525A
10
Zth / (K/W)
BU2525A
IC = 8 A
1
0.5
7A
100
0.1
0.2
0.1
0.05
0.02
PD
0.01
D=0
0.001
1E-06
10
0.1
1
IB / A
10
Fig.10. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
12
11
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
tp
D=
t
T
1E-04
1E-02
t/s
tp
T
1E+00
Fig.13. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
BU2525A
32 kHz
ts
IC =
8A
7A
0.1
1
IB / A
tf
10
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
IC / A
BU2525DW
BU2525A
100
tp =
= 0.01
ICM
40 us
ICDC
10
100 us
Ptot
1
1 ms
10 ms
0.1
DC
0.01
1
10
100
1000 VCE / V
Fig.14. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp;
Second-breakdown limits independant of temperature.
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
MECHANICAL DATA
Dimensions in mm
5.3 max
16 max
1.8
Net Mass: 5 g
5.3
o 3.5
max
7.3
3.5
21
max
15.5
max
seating
plane
2.5
15.5
min
4.0
max
1
2
3
0.9 max
2.2 max
1.1
3.2 max
5.45
0.4 M
5.45
Fig.15. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.100