Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V PINNING - SOT429 PIN MAX. UNIT 6 0.2 1500 800 10 25 125 5.0 0.35 V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.85 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 800 10 25 6 9 150 6 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 100 mA; VCE = 5 V IC = 6 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 1.0 - mA V V 5 13 7 5.0 1.1 9.5 V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF Switching times (32 kHz line deflection circuit) ICsat = 6.0 A; LC = 330 µH; Cfb = 9 nF; IB(end) = 0.85 A; LB = 3.45 µH; -VBB = 4 V; (-dIB/dt = 1.2 A/µs) 3.0 0.2 4.0 0.35 µs µs 4.5 0.35 5.5 0.5 µs µs ts tf Turn-off storage time Turn-off fall time Switching times (16 kHz line deflection circuit) ts tf ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs) Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW ICsat TRANSISTOR + 50v IC 100-200R DIODE t IBend IB Horizontal t Oscilloscope 10us 13us Vertical 32us 1R 100R VCE 6V 30-60 Hz t Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (32 kHz). IC / mA ICsat 90 % IC 250 10 % 200 tf t ts IB IBend 100 t 0 VCE / V min VCEOsust - IBM Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times definitions. ICsat + 150 v nominal adjust for ICsat DIODE t Lc IBend IB t 20us 26us IBend 64us VCE LB T.U.T. Cfb -VBB t Fig.6. Switching times test circuit (BU2520A). Fig.3. Switching times waveforms (16 kHz). September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU2520AW BU2520A hFE VBESAT / V 1.2 Tj = 25 C 5V BU2520A Tj = 25 C Tj = 125 C 1.1 Tj = 125 C 1 10 0.9 1V IC= 0.8 8A 6A 5A 4A 0.7 1 0.1 0.6 10 1 0 100 1 2 IB / A IC / A Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE 1.2 VBESAT / V 1.1 3 4 Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC BU2520A VCESAT / V 10 BU2520A Tj = 25 C Tj = 25 C Tj = 125 C Tj = 125 C 1 0.9 8A 0.8 1 6A IC/IB= 0.7 5A 3 0.6 4 0.5 IC = 4 A 5 0.4 0.1 0.1 1 IC / A 10 0.1 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB 1 VCESAT / V 1 IB / A 10 Fig.11. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC BU2520A 1000 Eoff / uJ BU2520A IC/IB = 0.9 5 0.8 32 kHz 4 0.7 IC = 6 A 3 0.6 16 kHz 100 0.5 5A Tj = 25 C 0.4 Tj = 125 C 0.3 0.2 0.1 10 0 0.1 10 1 0.1 100 IC / A Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB September 1997 1 IB / A 10 Fig.12. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; parameter frequency 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 BU2520AW BU2520A Zth / (K/W) 10 ts 16 kHz 1 0.5 0.2 0.1 0.05 0.1 IC = 0.02 6A PD 0.01 tp D= tp T 5A tf 0.1 1 IB / A D=0 0.001 1E-06 10 Fig.13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz ts, tf / us 12 11 10 9 t T 1E-04 1E-02 t/s 1E+00 Fig.16. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T IC / A BU2520A BU2520A 100 32 kHz tp = ICM ts 8 7 6 5 4 3 = 0.01 30 us ICDC IC = 10 6A 2 1 0 5A 0.1 100 us tf 1 IB / A 10 Ptot Fig.14. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz 1 1 ms 120 Normalised Power Derating PD% 110 100 90 0.1 80 70 10 ms 60 50 DC 40 30 20 10 0.01 0 0 20 40 60 80 100 Tmb / C 120 1 140 Fig.15. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) September 1997 10 100 1000 VCE / V Fig.17. Forward bias safe operating area. Tmb = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.18. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100