PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω 1.25Ω 0.6Ω 1.25Ω 1.07A -0.71A 1.07A -0.71A International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. CHANNEL N P N P MO-036AB Features: n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Pre-Irradiation Absolute Maximum Ratings (Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight N-Channel P-Channel 1.07 0.67 4.28 1.0 0.01 ±10 13 Á 1.07 0.1 7.0 Â -0.71 -0.45 -2.84 1.0 Units W 0.01 W/°C ±10 21 ² -0.71 0.1 -14 ³ V mJ A mJ A V/ns -55 to 150 oC 300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical) g For footnotes refer to the last page www.irf.com 1 04/01/08 IRHLG7670Z4, 2N7635M1 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions 60 — — V VGS = 0V, ID = 250µA — 0.08 — V/°C Reference to 25°C, ID = 1.0mA — — 0.6 Ω VGS = 4.5V, ID = 0.67A 1.0 — 0.9 — — — -4.04 — — — 2.0 — — 1.0 10 V mV/°C S VDS = VGS, ID = 250µA — — — — — — — — — — — — — — — — — — — 10 100 -100 2.5 0.5 1.6 6.0 2.4 34 11 — µA nA nC ns nH Ã VDS = 10V, IDS = 0.67A Ã VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.07A VDS = 30V VDD = 30V, ID = 1.07A, VGS = 5.0V, RG = 24Ω Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 162 39 2.1 Rg Gate Resistance — 13.8 — — — pF Ω — VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 1.07 4.28 1.2 51 70 Test Conditions A V ns nC Tj = 25°C, IS = 1.07A, VGS = 0V Ã Tj = 25°C, IF = 1.07A, di/dt ≤ 100A/µs VDD ≤ 25V Ã Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 125 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage -60 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -1.0 — ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.9 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units — V VGS = 0V, ID = -250µA -0.08 — V/°C Reference to 25°C, ID = -1.0mA — 1.25 Ω VGS = -4.5V, ID = -0.45A — 3.07 — — — — — — — — — — — — — Test Conditions — — — — — — — — — — 10 -2.0 V — mV/°C — S -1.0 -10 µA -100 100 2.8 1.7 0.8 17 20 27 23 — nA nC ns nH Ã VDS = VGS, ID = -250µA VDS = -10V, IDS = -0.45A Ã VDS= -48V ,VGS= 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.71A VDS = -30V VDD = -30V, ID = -0.71A, VGS = -5.0V, RG = 24Ω Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 138 39 6.7 Rg Gate Resistance — 52.4 — — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Ω f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.71 -2.84 -5.0 30 11 Test Conditions A V ns nC Tj = 25°C, IS = -0.71A, VGS = 0V Ã Tj = 25°C, IF = -0.71A, di/dt ≤ -100A/µs VDD ≤ -25V Ã Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJA Junction-to-Ambient Min Typ Max Units — — 125 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page www.irf.com 3 Radiation Characteristics Pre-Irradiation IRHLG7670Z4, 2N7635M1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 300K Rads (Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036) Diode Forward Voltage Units Test Conditions V VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 48V, VGS= 0V Min Max 60 1.0 — — — — 2.0 100 -100 1.0 µA — 0.5 Ω VGS = 4.5V, ID = 0.67A — 0.6 Ω VGS = 4.5V, ID = 0.67A — 1.2 V VGS = 0V, ID = 1.07A nA 1. Part numbers IRHLG7670Z4, IRHLG7630Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET Energy Range (MeV/(mg/cm )) (MeV) (µm) 0V -2V -4V -5V -6V -7V -8V -10V Br 37 305 39 60 60 60 60 60 35 30 20 I 60 370 34 60 60 60 60 60 20 15 - Au 84 390 30 60 60 60 60 - - - - VDS 2 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 70 60 50 40 30 20 10 0 Br I Au 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VGS Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 4 www.irf.com Radiation Characteristics Pre-Irradiation IRHLG7670Z4, 2N7635M1 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 300K Rads (Si)1 Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036) Diode Forward Voltage Max Units Test Conditions V VGS = 0V, ID = -250µA VGS = VDS, ID = -250µA VGS = -10V VGS = 10V VDS= -48V, VGS= 0V -60 -1.0 — — — — -2.0 -100 100 -1.0 µA — 1.20 Ω VGS = -4.5V, ID = -0.45A — 1.25 Ω VGS = -4.5V, ID = -0.45A — -5.0 V VGS = 0V, ID = -0.71A nA 1. Part numbers IRHLG7670Z4, IRHLG7630Z4 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) Ion LET Energy Range 2 VDS (V) (MeV) (µm) 0V 2V 4V 5V 6V 7V 8V 10V Br 37 305 39 -60 -60 -60 -60 -60 -50 -35 -25 I 60 370 34 -60 -60 -60 -60 -60 -20 - - Au 84 390 30 -60 -60 -60 -60 - - - - VDS (MeV/(mg/cm )) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= -70 -60 -50 -40 -30 -20 -10 0 Br I Au 0 1 2 3 4 5 6 7 8 9 10 VGS Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 5 IRHLG7670Z4, 2N7635M1 Pre-Irradiation N-Channel Q1,Q3 10 VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V 1 2.5V 60µs PULSE WIDTH Tj = 25°C 1 10 60µs PULSE WIDTH Tj = 150°C 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance 10 T J = 150°C (Normalized) ID, Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1 T J = 25°C VDS = 25V 20µs PULSE WIDTH 0.1 ID = 1.07A 1.5 1.0 0.5 VGS = 4.5V 0.0 2 2.5 3 3.5 4 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 6 2.5V 1 0.1 0.1 0.1 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 2.5 ID = 1.07A 2.0 1.5 1.0 T J = 150°C 0.5 T J = 25°C 0 2 3 4 5 6 7 8 9 RDS(on), Drain-to -Source On Resistance ( Ω) RDS(on), Drain-to -Source On Resistance (Ω) N-Channel Q1,Q3 0.8 0.75 T J = 150°C 0.7 0.65 0.6 0.55 0.5 T J = 25°C 0.45 0.4 Vgs = 4.5V 0.35 0.3 10 11 12 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 6. Typical On-Resistance Vs Drain Current 80 2.5 ID = 1.0mA VGS(th) Gate threshold Voltage (V) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage 70 60 2.0 1.5 1.0 ID = 50µA ID = 250µA 0.5 ID = 1.0mA ID = 150mA 0.0 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 8. Typical Threshold Voltage Vs Temperature 7 IRHLG7670Z4, 2N7635M1 Pre-Irradiation N-Channel Q1,Q3 280 240 ID = 1.07A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 200 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED Ciss 160 Coss 120 80 40 Crss 0 1 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 17 0 100 0 0.5 1 1.5 2 2.5 3 3.5 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 4 1.2 10 1.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 10 VDS = 48V VDS = 30V VDS = 12V 1 T J = 150°C T J = 25°C 0.1 0.8 0.6 0.4 0.2 VGS = 0V 0.01 0 0 8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 VSD , Source-to-Drain Voltage (V) T C , Case Temperature (°C) Fig 11. Typical Source-to-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 N-Channel Q1,Q3 32 OPERATION IN THIS AREA LIMITED BY R DS(on) EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 10 1 1ms 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10ms 28 TOP 24 BOTTOM ID 0.48A 0.68A 1.07A 20 16 12 8 4 0 10 25 100 50 75 100 125 150 Starting T J , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 1 P DM t1 t2 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 9 IRHLG7670Z4, 2N7635M1 Pre-Irradiation N-Channel Q1,Q3 V(BR)DSS tp 15V DRIVER L VDS D.U.T. RG VGS 20V + V - DD IAS tp 0.01Ω A I AS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5V 50KΩ 12V QGS .2µF .3µF QGD D.U.T. VG + V - DS VGS 3mA IG Charge Fig 17a. Basic Gate Charge Waveform VDS RD Fig 17b. Gate Charge Test Circuit VDS 90% VGS D.U.T. RG ID Current Sampling Resistors VDD + - V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 10 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 P-Channel Q2,Q4 10 VGS TOP -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V VGS -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 10 1 -2.0V 20µs PULSE WIDTH Tj = 25°C 0.1 1 -2.0V 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 0.1 -VDS , Drain-to-Source Voltage (V) 10 100 -VDS , Drain-to-Source Voltage (V) Fig 19. Typical Output Characteristics Fig 20. Typical Output Characteristics 10 2.0 (Normalized) T J = 25°C RDS(on) , Drain-to-Source On Resistance -I D, Drain-to-Source Current (A) 1 T J = 150°C 1 VDS = -25V 20µs PULSE WIDTH 0.1 ID = -0.71A 1.5 1.0 VGS = -4.5V 0.5 2 2.5 3 3.5 -V GS, Gate-to-Source Voltage (V) Fig 21. Typical Transfer Characteristics www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 22. Normalized On-Resistance Vs. Temperature 11 IRHLG7670Z4, 2N7635M1 Pre-Irradiation 4.0 ID = -0.71A 3.5 3.0 2.5 2.0 T J = 150°C 1.5 1.0 T J = 25°C 0.5 0 2 3 4 5 6 7 8 9 RDS(on), Drain-to -Source On Resistance ( Ω) RDS(on), Drain-to -Source On Resistance (Ω) P-Channel Q2,Q4 2.4 2.2 T J = 150°C 2.0 1.8 1.6 1.4 T J = 25°C 1.2 1.0 Vgs = -4.5V 0.8 10 11 12 0 0.5 Fig 23. Typical On-Resistance Vs Gate Voltage 2.0 2.5 3.0 Fig 24. Typical On-Resistance Vs Drain Current 3.0 75 ID = -1.0mA -V GS(th) Gate threshold Voltage (V) -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 1.5 -I D, Drain Current (A) -V GS, Gate -to -Source Voltage (V) 70 65 60 2.5 2.0 1.5 1.0 0.5 ID = -50µA ID = -250µA ID = -1.0mA ID = -150mA 0.0 55 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 25. Typical Drain-to-Source Breakdown Voltage Vs Temperature 12 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( °C ) Fig 26. Typical Threshold Voltage Vs Temperature www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 P-Channel Q2,Q4 240 12 VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + Cgd 160 Ciss 120 Coss 80 VDS= -48V VDS= -30V VDS= -12V ID = -0.71A -V GS, Gate-to-Source Voltage (V) 200 40 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 35 C rss 0 1 10 0 100 0 1 -VDS, Drain-to-Source Voltage (V) 2 3 4 5 6 QG, Total Gate Charge (nC) Fig 27. Typical Capacitance Vs.Drain-to-Source Voltage Fig 28. Typical Gate Charge Vs. Gate-to-Source Voltage 10 0.8 T J = 150°C 1 -I D, Drain Current (A) -I SD, Reverse Drain Current (A) 0.7 T J = 25°C 0.1 0.6 0.5 0.4 0.3 0.2 0.1 VGS = 0V 0.01 0 0 0.5 1 1.5 2 2.5 3 3.5 -V SD , Source-to-Drain Voltage (V) Fig 29. Typical Source-Drain Diode Forward Voltage www.irf.com 4 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 30. Maximum Drain Current Vs. Case Temperature 13 IRHLG7670Z4, 2N7635M1 Pre-Irradiation P-Channel Q2,Q4 50 OPERATION IN THIS AREA LIMITED BY R DS(on) EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain-to-Source Current (A) 10 1 1ms 0.1 10ms 0.01 Tc = 25°C Tj = 150°C Single Pulse 1 TOP 40 BOTTOM ID -0.32A -0.45A -0.71A 30 20 10 0 10 25 100 50 75 100 125 150 Starting T J , Junction Temperature (°C) -VDS , Drain-to-Source Voltage (V) Fig 31. Maximum Safe Operating Area Fig 32. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 1 0.01 P DM t1 t2 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 33. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 14 www.irf.com Pre-Irradiation IRHLG7670Z4, 2N7635M1 P-Channel Q2,Q4 L VDS I AS D.U.T. RG IAS -20V VGS tp VDD A DRIVER 0.01Ω tp 15V V(BR)DSS Fig 34a. Unclamped Inductive Test Circuit Fig 34b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -4.5V 50KΩ 12V QGS .2µF .3µF QGD D.U.T. VG +VDS VGS -3mA IG Charge ID Current Sampling Resistors Fig 35b. Gate Charge Test Circuit Fig 35a. Basic Gate Charge Waveform RD V DS td(on) VGS D.U.T. RG tr t d(off) tf VGS V DD 10% - + VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 36a. Switching Time Test Circuit www.irf.com 90% VDS Fig 36b. Switching Time Waveforms 15 IRHLG7670Z4, 2N7635M1 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 22.5mH, Peak IL = 1.07A, VGS = 10V Â ISD ≤ 1.07A, di/dt ≤ 214A/µs, VDD ≤ 60V, TJ ≤ 150°C Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. ± 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Å Total Dose Irradiation with VDS Bias. ± 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A ² VDD = -25V, starting TJ = 25°C, L= 85mH, Peak IL = -0.71A, VGS = -10V ³ ISD ≤ -0.71A, di/dt ≤ -164A/µs, VDD ≤ -60V, TJ ≤ 150°C Case Outline and Dimensions — MO-036AB Q4 Q1 Q3 Q4 Q3 Q1 Q2 Q2 CHANNELS N Ch.- Q1, Q3 P Ch.- Q2, Q4 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2008 16 www.irf.com