PHILIPS BLT71

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D315
BLT71/8
UHF power transistor
Product specification
Supersedes data of 1996 Feb 06
1997 Oct 14
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
PINNING - SOT96-1
FEATURES
• High efficiency
• Very high gain
• Internal pre-matched input
PIN
SYMBOL
DESCRIPTION
1, 8
b
base
2, 4, 5, 7
e
emitter
3, 6
c
collector
• Low supply voltage.
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation for the 900 MHz communication band.
5
8
handbook, halfpage
DESCRIPTION
1
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
4
Top view
MBK187
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-AB
900
4.8
1.2
Gp
(dB)
ηC
(%)
≥11
≥55
typ. 13
typ. 63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
16
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
−
2.9
W
Tstg
storage temperature
Ts = 60 °C; VCE ≤ 6.5 V; note 1
−65
+150
°C
Tj
operating junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 14
2
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Rth j-s
Pdis = 2.9 W; Ts = 60 °C; note 1
MAX.
UNIT
40
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.5 mA
16
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
8
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
V
ICES
collector leakage current
VCE = 8 V; VBE = 0
−
0.1
mA
hFE
DC current gain
VCE = 5 V; IC = 100 mA
25
−
Cc
collector capacitance
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
−
7
pF
Cre
feedback capacitance
VCE = 4.8 V; IC = 0; f = 1 MHz
−
5
pF
MBK263
1
V
MLD131
150
handbook, halfpage
handbook, halfpage
IC
(A)
h FE
100
(1)
50
10−1 −1
10
1
10
VCE (V)
0
102
0
200
400
600
800
IC (mA)
VCE = 4.8 V.
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.
Ts = 115 °C.
Fig.3
Fig.2
DC SOAR.
1997 Oct 14
3
DC current gain as a function of collector
current; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
CW, class-AB
900
4.8
3
1.2
Gp
(dB)
ηC
(%)
≥11
≥55
typ. 13
typ. 63
Ruggedness in class-AB operation
The BLT71/8 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; ICQ = 3 mA; PL = 1.2 W; Ts = 60 °C.
MGD192
MGD191
80
16
Gp
(dB)
handbook, halfpage
ηC
2.0
PL
(W)
handbook, halfpage
ηC
(%)
1.6
12
Gp
60
1.2
40
8
0.8
20
4
0.4
0
0
0.4
0.8
1.2
0
1.6
2.0
PL (W)
0
0
50
100
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
VCE = 4.8 V; ICQ = 3 mA; f = 900 MHz.
Fig.4
Fig.5
Power gain and collector efficiency as
functions of load power; typical values.
1997 Oct 14
4
150
200
PIN (mW)
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
BLT71/8
Vbias = 24 V
VC = 4.8 V
R1
C16
R2
C14
L13
R3
L14
R4
TR2
50 Ω
input
C15
L12
L6
C13
C3
L1
C1
L2
L3
C5
L11
L4
L5
C9
L7
C11
L8
L9
C12
L10
50 Ω
output
TR1
C2
C4
D.U.T.
BLT71/8
C6
C7
C8
C10
MBK267
Fig.6 Class-AB test circuit at f = 900 MHz.
1997 Oct 14
5
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
140
handbook, full pagewidth
80
plated througholes
fixing screws
Vb
VC
C14
C16
TR2
R1
L13
R3
L14
L11
C13
C1
C3
L3
L2
L12
C5
L1
C2
R4
C15
R2
L4
C4
L5
L6
C6
L7
C7
C9
C11
C12
L10
L8
C8
C10
L9
MBK266
Dimensions in mm
The components are situated on one side of the copper-clad printed circuit board, the other side is unetched and serves
as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component lay-out for the 900 MHz class-AB test circuit.
1997 Oct 14
6
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
List of components (see Figs 6 and 7).
COMPONENT
DESCRIPTION
VALUE
CATALOGUE
NO.
DIMENSIONS
C1, C12,
C13, C15
multilayer ceramic chip capacitor; note 1
120 pF
C2, C4, C8,
C10
Giga-Trim capacitor; note 2
0.6 to 4.5 pF
C3
multilayer ceramic chip capacitor; note 1
4.7 pF
C5
multilayer ceramic chip capacitor; note 1
5.6 pF
C6
multilayer ceramic chip capacitor; note 1
3.9 pF
C7
multilayer ceramic chip capacitor; note 1
6.8 pF
C9
multilayer ceramic chip capacitor; note 1
7.5 pF
C11
multilayer ceramic chip capacitor; note 1
5.1 pF
C14, C16
multilayer ceramic chip capacitor; note 1
10 nF
L1, L10
stripline; note 3
50 Ω
10 x 2.4 mm
L2
stripline; note 3
50 Ω
2 x 2.4 mm
L3
stripline; note 3
50 Ω
30.4 x 2.4 mm
L4
stripline; note 3
50 Ω
17.4 x 2.4 mm
L5
stripline; note 3
50 Ω
6.8 x 2.4 mm
L6
stripline; note 3
50 Ω
8 x 2.4 mm
L7
stripline; note 3
50 Ω
19 x 2.4 mm
L8
stripline; note 3
50 Ω
28 x 2.4 mm
L9
stripline; note 3
50 Ω
1.6 x 2.4 mm
L11
10 turns 1 mm enamelled copper wire
140 nH
int. dia. = 4 mm;
lead 1 = 2.5 mm;
lead 2 = 11 mm
L12
2 turns 1 mm enamelled copper wire
60 nH
int. dia. = 2 mm;
leads = 2 x 7.5 mm
L13, L14
4S2 wideband RF choke
R1
metal film resistor
1.4 kΩ; 0.6 W
2322 156 11402
R2, R3, R4
metal film resistor
10 Ω; 0.6 W
2322 156 11009
TR1
device under test
BLT71/8
TR2
NPN transistor
BD139
4330 030 36301
9330 912 20112
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. Tekelec Giga-trim, type 37271.
3. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.
1997 Oct 14
7
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
MBK264
12
MBK265
10
ZL
handbook, halfpage
handbook, halfpage
Zi
(Ω)
(Ω)
8
ri
RL
8
6
xi
4
4
XL
2
0
800
850
900
950
f (MHz)
0
800
1000
850
900
950
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.8
Fig.9
Input impedance as a function of frequency
(series components); typical values.
Load impedance as a function of frequency
(series components); typical values.
MGD195
23.4
handbook, halfpage
16
1000
handbook, halfpage
Gp
(dB)
12
8
Zi
ZL
4
0
850
Zi
900
950
f (MHz)
1000
ZL
MGD196
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Dimensions in mm.
Fig.10 Power gain as a function of frequency
(series components); typical values.
Fig.11 RF test print and definition of transistor
impedance.
1997 Oct 14
8
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03S
MS-012AA
1997 Oct 14
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
9
o
8
0o
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 14
10
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
NOTES
1997 Oct 14
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Oct 14
Document order number:
9397 750 02923