PHILIPS BLF544

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLF544
UHF power MOS transistor
Product specification
Supersedes data of October 1992
1998 Jan 21
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
PINNING - SOT171A
FEATURES
• High power gain
PIN
SYMBOL
• Easy power control
1
s
source
• Good thermal stability
2
s
source
• Gold metallization ensures excellent reliability
3
g
gate
• Designed for broadband operation.
4
d
drain
5
s
source
6
s
source
APPLICATIONS
DESCRIPTION
• Communication transmitters in the UHF frequency
range.
handbook, halfpage
2
4
6
DESCRIPTION
d
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (VGS)
information is provided for matched pair applications.
s
g
1
3
5
Top view
MAM390
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
20
>11
>50
CW, class-B
960
28
20
typ. 7
typ. 50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 21
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
−
3.5
A
Ptot
total power dissipation
−
48
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
Tmb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
3.7
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.4
K/W
MRA992
10
MBK442
60
handbook, halfpage
handbook, halfpage
Ptot
ID
(A)
(W)
(1)
(1)
(2)
40
1
(2)
20
10−1
1
10
VDS (V)
0
102
0
80
120
Th ( °C)
160
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
1998 Jan 21
40
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
65
−
−
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 mA
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
1
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 40 mA; VDS = 10 V
1
−
4
V
∆VGSth
gate-source voltage difference of
matched pairs
ID = 40 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 1.2 A; VDS = 10 V
600
900
−
mS
RDSon
drain-source on-state resistance
ID = 1.2 A; VGS = 10 V
−
0.85
1.25
Ω
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
−
4.8
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
32
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
24
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
6.4
−
pF
MDA504
4
MDA505
6
handbook, halfpage
handbook, halfpage
T.C
(mV/K)
ID
(A)
2
4
0
2
−2
−4
10−2
10−1
0
1
ID (A)
10
0
5
10
15
VGS (V)
20
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
1998 Jan 21
Fig.5
4
Drain current as a function of gate-source
voltage; typical values.
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
MDA506
2
MDA507
100
C
(pF)
handbook, halfpage
handbook, halfpage
RDSon
(Ω)
1.6
80
1.2
60
0.8
40
0.4
20
Cis
Cos
0
0
0
50
100
Tj (°C)
150
0
10
20
VDS (V)
30
ID = 1.2 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
MDA508
40
handbook, halfpage
Crs
(pF)
30
20
10
0
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jan 21
5
Input and output capacitance as functions
of drain-source voltage; typical values.
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
APPLICATION INFORMATION
Th = 25 °C; Rth mb-h = 0.4 K/W unless otherwise specified.
RF performance in a common source class-B circuit.
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
40
20
>11
typ. 14
>50
typ. 60
CW, class-B
960
28
40
20
typ. 7
typ. 50
CW, class-B
960
24
40
15
typ. 7
typ. 50
MODE OF OPERATION
Ruggedness in class-B operation
The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under
the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
MDA512
20
Gp
handbook, halfpage
(dB)
16
80
ηD
(%)
MDA513
30
handbook, halfpage
PL
(W)
Gp
20
12
60
ηD
8
10
4
0
40
0
10
14
18
22
26
0
30
1
2
PL (W)
PIN (W)
3
Class-B operation; VDS = 28 V; IDQ = 40 mA;
ZL = 4.3 + j6.3 Ω; f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 40 mA;
ZL = 4.3 + j6.3 Ω; f = 500 MHz.
Fig.9
Fig.10 Load power as a function of input power;
typical values.
Power gain and efficiency as functions of
load power; typical values.
1998 Jan 21
6
Philips Semiconductors
Product specification
UHF power MOS transistor
handbook, full pagewidth
BLF544
,,,,,
,,,,,,
,,,,,
,,,,,,
C14
C2
50 Ω
input
C1
L1
C4
L2
L3
C8
L4
L5
D.U.T.
L8
BLF544
C3
C15
L6
C9
C5
L9
C11
R1
C10
R5
C6
L7
C12
R2
C13
C7
+VD
R3
R4
f = 500 MHz
Fig.11 Test circuit for class-B operation.
1998 Jan 21
7
MDA502
C17
C16
50 Ω
output
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
List of components (see Figs 11 and 12).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C6, C11, C17 multilayer ceramic chip capacitor;
note 1
390 pF; 500 V
C2
multilayer ceramic chip capacitor;
note 2
16 pF; 50 V
C3, C5
film dielectric trimmer
2 to 9 pF
C4
multilayer ceramic chip capacitor;
note 2
27 pF; 50 V
C7
multilayer ceramic chip capacitor
2 × 100 nF in
parallel; 50 V
C8, C9
multilayer ceramic chip capacitor;
note 2
39 pF
C10, C12
multilayer ceramic chip capacitor
100 nF; 50 V
2222 852 47104
C13
electrolytic capacitor
4.7 µF; 63 V
2222 030 38478
C14
multilayer ceramic chip capacitor;
note 1
20 pF; 500 V
C15, C16
film dielectric trimmer
2 to 18 pF
L1
stripline note 3
50 Ω
9.5 × 2.5 mm
L2
stripline note 3
50 Ω
34.5 × 2.5 mm
L3
stripline note 3
50 Ω
17.5 × 2.5 mm
L4, L5
stripline note 3
42 Ω
3 × 3 mm
L6
4 turns enamelled 0.8 mm copper
wire
31 nH
length 7.5 mm
int. dia. 3 mm
leads 2 × 5 mm
L7
grade 3B Ferroxcube RF choke
L8
stripline note 3
50 Ω
22 × 2.5 mm
L9
stripline note 3
50 Ω
39.5 × 2.5 mm
R1, R2
0.4 W metal film resistor
1 kΩ
R3
10 turns cermet potentiometer
50 kΩ
R4
0.4 W metal film resistor
140 kΩ
2322 151 11404
R5
1 W metal film resistor
10 Ω
2322 153 51009
2222 809 09002
2222 852 47104
2222 809 09003
4312 020 36642
2322 151 11002
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2);
thickness 1⁄32 inch.
1998 Jan 21
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
150
handbook, full pagewidth
mounting screw
straps
rivets
straps
straps
70
straps
mounting screw
R3
C7
C13
+VD
R2
R5
C10
C1
L1
C6
C4 R1
C2
L2
L6
L4
L5
L3
C12
L7
C8
L8
C11
C14
C17
L9
C9
C3
C5
C15
C16
MDA501
Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
1998 Jan 21
9
Philips Semiconductors
Product specification
UHF power MOS transistor
handbook, full pagewidth
,,,,,,
,,,,,,
,,,,,,
,,,,,,
C2
50 Ω
input
BLF544
C1
L1
C4
L2
L3
C8
L4
C13
C15
C17
L5
L8
L9
D.U.T.
L10 C19
BLF544
C14
C3
C9
C5
C16
C18
L6
C11
R1
R4
L7
C7
C10
C6
C12
R2
R3
+VD
f = 960 MHz.
Fig.13 Test circuit for class-B operation.
1998 Jan 21
10
MDA503
50 Ω
output
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
List of components (see Figs 12 and 13)
COMPONENT
DESCRIPTION
VALUE
C1
multilayer ceramic chip capacitor;
note 1
68 pF; 500 V
C2
multilayer ceramic chip capacitor;
note 2
1.6 pF; 50 V
C3, C5, C16, C18 film dielectric trimmer
1.4 to 5.5 pF
C4
multilayer ceramic chip capacitor;
note 2
1 pF; 50 V
C6
multilayer ceramic chip capacitor
10 nF; 50 V
C7, C11
multilayer ceramic chip capacitor;
note 1
56 µF; 500 V
DIMENSIONS
CATALOGUE NO.
2222 809 09001
2222 852 47103
C8, C9, C15, C17 multilayer ceramic chip capacitor
note 2
6.8 µF; 50 V
C10
multilayer ceramic chip capacitor
100 nF; 50 V
2222 852 47104
C12
electrolytic capacitor
4.7 µF; 63 V
2222 030 38478
C13
multilayer ceramic chip capacitor;
note 2
16 pF; 50 V
C14
multilayer ceramic chip capacitor;
note 2
18 pF; 50 V
C19
multilayer ceramic chip capacitor;
note 1
62 pF; 500 V
L1, L8
stripline; note 3
50 Ω
6 × 2.5 mm
L2
stripline; note 3
50 Ω
38 × 2.5 mm
L3
stripline; note 3
50 Ω
17.5 × 2.5 mm
L4, L5
stripline; note 3
42 Ω
3 × 3 mm
L6
2 turns enamelled 1 mm copper
wire
16 nH
length 3.4 mm
int. dia. 3 mm
leads 2 × 5 mm
L7
grade 3B Ferroxcube RF choke
L9
stripline; note 3
50 Ω
21 × 2.5 mm
L10
stripline; note 3
50 Ω
34.5 × 2.5 mm
R1
0.4 W metal film resistor
15 kΩ
R2
10 turns potentiometer
50 kΩ
R3
0.4 W metal film resistor
140 kΩ
2322 151 11404
R4
0.4 W metal film resistor
10 Ω
2322 153 51009
4312 020 36642
2322 151 11473
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (εr = 2.2);
thickness 1⁄32 inch.
1998 Jan 21
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
MDA509
5
MDA510
20
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
0
RL
15
−5
10
XL
xi
−10
−15
5
0
0
200
400
f (MHz)
600
0
200
400
f (MHz)
600
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Fig.15 Load impedance as a function of frequency
(series components); typical values.
Optimum input and load impedances
Optimum input impedance: 1.2 + j4.8 Ω.
Optimum load impedance: 2.6 − j3.1 Ω.
Conditions: class-B operation; VDS = 24 V;
IDQ = 40 mA; f = 960 MHz; PL = 15 W; typical values.
MDA511
30
handbook, halfpage
Gp
(dB)
20
10
0
0
200
400
f (MHz)
600
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Fig.16 Power gain as a function of frequency;
typical values.
1998 Jan 21
12
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C
H1
c
b1
2
H
4
6
E1
U2
1
A
3
5
E
w1 M A B
p
Q
w3 M
b
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
inches
w1
w2
w3
0.51
1.02
0.26
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236
0.120 0.445 0.365 0.135 0.170
0.980 0.236
0.725
0.02
0.140
0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224
0.100 0.415 0.355 0.125 0.162
0.970 0.224
0.04
0.01
OUTLINE
VERSION
F
JEDEC
EIAJ
SOT171A
1998 Jan 21
H1
3.05 11.31 9.27
2.54 10.54 9.01
REFERENCES
IEC
H
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 6.00
18.42
4.11
24.63 5.70
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
13
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 21
14
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
NOTES
1998 Jan 21
15
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Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA57
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
127067/00/02/pp16
Date of release: 1998 Jan 21
Document order number:
9397 750 03117