PHILIPS PHX18NQ11

PHX18NQ11T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 13 February 2004
M3D308
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
■ Low on-state resistance
■ Isolated mounting base
■ Fast switching
■ Low thermal resistance
1.3 Applications
■ DC-to-DC converters
■ Switched-mode power supplies
1.4 Quick reference data
■ VDS ≤ 110 V
■ Ptot ≤ 31.2 W
■ ID ≤ 12.5 A
■ RDSon ≤ 90 mΩ
2. Pinning information
Table 1:
Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
mb
mounting base;
isolated
Simplified outline
Symbol
d
mb
g
MBB076
1 2 3
MBK110
SOT186A (TO-220F)
s
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
PHX18NQ11T
Package
Name
Description
Version
TO-220F
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220AB ‘full pack’
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
110
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
110
V
VGS
gate-source voltage (DC)
V
-
±20
Th = 25 °C; VGS = 10 V; Figure 2 and 3
[1]
-
12.5
A
Th = 100 °C; VGS = 10 V Figure 2
[1]
-
7.9
A
peak drain current
Th = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
[1]
-
50.2
A
Ptot
total power dissipation
Th = 25 °C; Figure 1
[1]
-
31.2
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
drain current (DC)
ID
IDM
Source-drain diode
IS
source (diode forward) current (DC) Th = 25 °C
[1]
-
12.5
A
ISM
peak source (diode forward) current Th = 25 °C; pulsed; tp ≤ 10 µs
[1]
-
50.2
A
-
56
mJ
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
[1]
unclamped inductive load; ID = 7.5 A;
tp = 0.09 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
External heatsink connected to mounting base.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
2 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa13
120
03aa21
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
Th (°C)
150
P tot
P der = ----------------------- × 100%
P
°
0
50
100
150
200
Th (°C)
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of heatsink temperature.
Fig 2. Normalized continuous drain current as a
function of heatsink temperature.
03am62
102
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
10
100 µ s
DC
1 ms
1
10 ms
100 ms
10-1
1
102
10
103
VDS (V)
Th = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
3 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
thermal resistance from junction to heatsink
Rth(j-h)
[1]
Conditions
Min Typ Max Unit
[1]
Figure 4
-
-
4
K/W
External heatsink connected to mounting base.
5.1 Transient thermal impedance
03am61
10
Zth(j-h)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
δ=
P
0.02
tp
T
single pulse
t
tp
T
10-1
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
4 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
110
-
-
V
Tj = −55 °C
99
-
-
V
Tj = 25 °C
2
3
4
V
Tj = 150 °C
1.2
-
-
V
Tj = −55 °C
-
-
4.4
V
-
-
1
µA
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
-
-
500
µA
-
10
100
nA
Tj = 25 °C
-
67
90
mΩ
Tj = 150 °C
-
148
198
mΩ
-
21
-
nC
-
2.5
-
nC
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 9 A; Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
ID = 3 A; VDD = 80 V; VGS = 10 V; Figure 13
-
8
-
nC
-
635
-
pF
output capacitance
-
105
-
pF
Crss
reverse transfer capacitance
-
60
-
pF
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 50 V; RL = 15 Ω; VGS = 10 V; RG = 5.6 Ω
td(on)
turn-on delay time
-
6
-
ns
tr
rise time
-
12
-
ns
td(off)
turn-off delay time
-
20
-
ns
tf
fall time
-
10
-
ns
-
0.87
1.2
V
-
55
-
ns
-
135
-
nC
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 12 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 12 A; dIS/dt = −100 A/µs; VGS = 0 V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
5 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03am63
12
Tj = 25 °C
10 V
03am65
12
6V
ID
(A)
ID
(A)
5.4 V
8
8
5.2 V
5V
4
4
4.8 V
4.6 V
4.4 V
Tj = 25 °C
150 °C
0
0
0
0.5
1
1.5
0
2
2
4
VDS (V)
Tj = 25 °C
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03am64
VGS = 4.8 V
RDSon
(Ω)
6
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
0.2
VGS (V)
5V
5.2 V
5.4 V
03aa29
3
Tj = 25 °C
a
0.15
2
0.1
6V
1
10 V
0.05
0
0
0
4
8
ID (A)
12
Tj = 25 °C
-60
60
120 T (°C) 180
j
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
0
Rev. 01 — 13 February 2004
6 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa32
5
ID
(A)
VGS(th)
(V)
4
max
10-2
3
typ
10-3
2
min
10-4
1
10-5
0
10-6
-60
03aa35
10-1
0
60
120
Tj (°C)
180
min
0
2
typ
max
4
VGS (V)
6
Tj = 25 °C
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03am67
104
C
(pF)
103
Ciss
102
Coss
Crss
10
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
7 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03am66
12
03am68
10
VGS = 0 V
ID = 3 A
VGS
(V)
8
IS
(A)
Tj = 25 °C
8
20 V
VDD = 80 V
6
150 °C
Tj = 25 °C
4
4
2
0
0
0
0.3
0.6
0.9
VSD (V)
1.2
0
Tj = 25 °C and 150 °C; VGS = 0 V
5
10
15
20
25
QG (nC)
ID = 3 A; VDD = 20 V and 80 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
7. Isolation characteristics
Table 6:
Symbol
Isolation characteristics
Parameter
V(isol)RMS RMS isolation voltage from all three
terminals to external heatsink
C(d-h)
Conditions
Min.
Typ.
Max.
Unit
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust-free.
-
-
2500
V
-
10
-
pF
Capacitance from drain to external
heatsink
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
8 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
A
A1
P
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
REFERENCES
IEC
SOT186A
JEDEC
JEITA
3-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
02-03-12
02-04-09
Fig 14. SOT186A (TO-220F).
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
9 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
9. Revision history
Table 7:
Revision history
Rev Date
01
20040213
CPCN
Description
-
Product data (9397 750 12915)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Product data
Rev. 01 — 13 February 2004
10 of 12
PHX18NQ11T
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
10. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 12915
Rev. 01 — 13 February 2004
11 of 12
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 13 February 2004
Document order number: 9397 750 12915