PHILIPS 74LVC2G34GV

INTEGRATED CIRCUITS
DATA SHEET
74LVC2G34
Dual buffer gate
Product specification
Supersedes data of 2003 Jul 25
2004 Sep 10
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
FEATURES
DESCRIPTION
• Wide supply voltage range from 1.65 V to 5.5 V
The 74LVC2G34 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
• 5 V tolerant input/output for interfacing with 5 V logic
• High noise immunity
Inputs can be driven from either 3.3 V or 5 V devices.
These feature allows the use of these devices as
translators in a mixed 3.3 V and 5 V environment.
• Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
The 74LVC2G34 provides two buffers.
– MM EIA/JESD22-A115-A exceeds 200 V.
• ±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Multiple package options
• Specified from −40 °C to +85 °C and
−40 °C to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C.
SYMBOL
tPHL/tPLH
PARAMETER
propagation delay input nA to output nY
CI
input capacitance
CPD
power dissipation capacitance
CONDITIONS
UNIT
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
3.8
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
2.4
ns
VCC = 2.7 V; CL = 50 pF; RL = 500 Ω
2.5
ns
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω
2.2
ns
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω
1.9
ns
2.5
pF
20
pF
VCC = 3.3 V; notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC.
2004 Sep 10
TYPICAL
2
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
FUNCTION TABLE
See note 1.
INPUT
OUTPUT
nA
nY
L
L
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TEMPERATURE RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74LVC2G34GW
−40 °C to +125 °C
6
SC-88
plastic
SOT363
YA
74LVC2G34GV
−40 °C to +125 °C
6
SC-74
plastic
SOT457
Y34
74LVC2G34GM
−40 °C to +125 °C
6
XSON6
plastic
SOT886
YA
PINNING
PIN
SYMBOL
DESCRIPTION
1
1A
data input
2
GND
ground (0 V)
3
2A
data input
4
2Y
data output
5
VCC
supply voltage
6
1Y
data output
34
1A
1
GND
2
2A
3
34
6
1Y
5
VCC
4
2Y
1A
1
6
1Y
GND
2
5
VCC
2A
3
4
2Y
001aab676
001aab677
Transparent top view
Fig.1 Pin configuration SC-88 and SC-74.
2004 Sep 10
Fig.2 Pin configuration XSON6.
3
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
handbook, halfpage
1
1A
1Y
6
3
2A
2Y
4
handbook, halfpage
1
1
6
1
3
4
MNB064
MNB063
Fig.3 Logic symbol.
Fig.4 Logic symbol (IEEE/IEC).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
Tamb
operating ambient temperature
tr, tf
input rise and fall times
active mode
0
VCC
V
VCC = 0 V; Power-down mode
0
5.5
V
−40
+125
°C
VCC = 1.65 V to 2.7 V
0
20
ns/V
VCC = 2.7 V to 5.5 V
0
10
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+6.5
V
IIK
input diode current
VI < 0 V
−
−50
mA
VI
input voltage
note 1
−0.5
+6.5
V
IOK
output diode current
VO > VCC or VO < 0 V
−
±50
mA
VO
output voltage
active mode; notes 1 and 2
−0.5
VCC + 0.5 V
Power-down mode; notes 1 and 2 −0.5
+6.5
V
IO
output source or sink current
−
±50
mA
ICC, IGND
VCC or GND current
−
±100
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation
−
300
mW
VO = 0 V to VCC
Tamb = −40 °C to +125 °C
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
2004 Sep 10
4
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC (V)
OTHER
Tamb = −40 °C to +85 °C; note 1
VIH
VIL
VOL
VOH
HIGH-level input voltage
LOW-level input voltage
1.65 to 1.95
0.65 × VCC
−
−
V
2.3 to 2.7
1.7
−
−
V
2.7 to 3.6
2.0
−
−
V
4.5 to 5.5
0.7 × VCC
−
−
V
1.65 to 1.95
−
−
0.35 × VCC
V
2.3 to 2.7
−
−
0.7
V
2.7 to 3.6
−
−
0.8
V
4.5 to 5.5
−
−
0.3 × VCC
V
LOW-level output voltage VI = VIH or VIL
HIGH-level output
voltage
IO = 100 µA
1.65 to 5.5
−
−
0.1
V
IO = 4 mA
1.65
−
−
0.45
V
IO = 8 mA
2.3
−
−
0.3
V
IO = 12 mA
2.7
−
−
0.4
V
IO = 24 mA
3.0
−
−
0.55
V
IO = 32 mA
4.5
−
−
0.55
V
VI = VIH or VIL
IO = −100 µA
1.65 to 5.5
VCC − 0.1
−
−
V
IO = −4 mA
1.65
1.2
−
−
V
IO = −8 mA
2.3
1.9
−
−
V
IO = −12 mA
2.7
2.2
−
−
V
IO = −24 mA
3.0
2.3
−
−
V
IO = −32 mA
4.5
3.8
−
−
V
ILI
input leakage current
VI = 5.5 V or GND
5.5
−
±0.1
±5
µA
Ioff
power OFF leakage
current
VI or VO = 5.5 V
0
−
±0.1
±10
µA
ICC
quiescent supply current VI = VCC or GND;
IO = 0 A
5.5
−
0.1
10
µA
∆ICC
additional quiescent
supply current per pin
2.3 to 5.5
−
5
500
µA
2004 Sep 10
VI = VCC − 0.6 V;
IO = 0 A
5
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
OTHER
TYP.
MAX.
UNIT
VCC (V)
Tamb = −40 °C to +125 °C
VIH
VIL
VOL
VOH
HIGH-level input voltage
LOW-level input voltage
1.65 to 1.95
0.65 × VCC
−
−
V
2.3 to 2.7
1.7
−
−
V
2.7 to 3.6
2.0
−
−
V
4.5 to 5.5
0.7 × VCC
−
−
V
1.65 to 1.95
−
−
0.35 × VCC
V
2.3 to 2.7
−
−
0.7
V
2.7 to 3.6
−
−
0.8
V
4.5 to 5.5
−
−
0.3 × VCC
V
IO = 100 µA
1.65 to 5.5
−
−
0.1
V
IO = 4 mA
1.65
−
−
0.70
V
IO = 8 mA
2.3
−
−
0.45
V
IO = 12 mA
2.7
−
−
0.60
V
IO = 24 mA
3.0
−
−
0.80
V
IO = 32 mA
4.5
−
−
0.80
V
IO = −100 µA
1.65 to 5.5
VCC − 0.1
−
−
V
IO = −4 mA
1.65
0.95
−
−
V
IO = −8 mA
2.3
1.7
−
−
V
IO = −12 mA
2.7
1.9
−
−
V
IO = −24 mA
3.0
2.0
−
−
V
LOW-level output voltage VI = VIH or VIL
HIGH-level output
voltage
VI = VIH or VIL
IO = −32 mA
4.5
3.4
−
−
V
ILI
input leakage current
VI = 5.5 V or GND
5.5
−
−
±20
µA
Ioff
power OFF leakage
current
VI or VO = 5.5 V
0
−
−
±20
µA
ICC
quiescent supply current VI = VCC or GND;
IO = 0 A
5.5
−
−
40
µA
∆ICC
additional quiescent
supply current per pin
2.3 to 5.5
−
−
5000
µA
VI = VCC − 0.6 V;
IO = 0 A
Note
1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
2004 Sep 10
6
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
AC CHARACTERISTICS
GND = 0 V.
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
WAVEFORMS
TYP.
MAX.
UNIT
VCC (V)
Tamb = −40 °C to +85 °C; note 1
tPHL/tPLH
propagation delay
input nA to output nY
see Figs 5 and 6
1.65 to 1.95
1.0
3.8
8.6
ns
2.3 to 2.7
0.5
2.4
4.4
ns
2.7
0.5
2.5
5.0
ns
3.0 to 3.6
0.5
2.2
4.1
ns
4.5 to 5.5
0.5
1.9
3.2
ns
Tamb = −40 °C to +125 °C
tPHL/tPLH
propagation delay
input nA to output nY
see Figs 5 and 6
1.65 to 1.95
1.0
−
10.8
ns
2.3 to 2.7
0.5
−
5.5
ns
2.7
0.5
−
6.3
ns
3.0 to 3.6
0.5
−
5.1
ns
4.5 to 5.5
0.5
−
4.0
ns
Note
1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
AC WAVEFORMS
VI
nA input
VM
VM
GND
tPLH
tPHL
VOH
VM
nY output
VM
VOL
mnb072
INPUT
VCC
VM
1.65 V to 1.95 V
0.5 × VCC
VCC
≤ 2.0 ns
2.3 V to 2.7 V
0.5 × VCC
VCC
≤ 2.0 ns
2.7 V
1.5 V
2.7 V
≤ 2.5 ns
3.0 V to 3.6 V
1.5 V
2.7 V
≤ 2.5 ns
4.5 V to 5.5 V
0.5 × VCC
VCC
≤ 2.5 ns
VI
tr = tf
VOL and VOH are typical output voltage drop that occur with the output
load.
Fig.5 Input nA to output nY propagation delay times.
2004 Sep 10
7
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
VEXT
VCC
PULSE
GENERATOR
VI
RL
VO
D.U.T.
CL
RT
RL
mna616
VCC
VI
CL
RL
VEXT
tPLH/tPHL
1.65 V to 1.95 V
VCC
30 pF
1 kΩ
open
2.3 V to 2.7 V
VCC
30 pF
500 Ω
open
2.7 V
2.7 V
50 pF
500 Ω
open
3.0 V to 3.6 V
2.7 V
50 pF
500 Ω
open
4.5 V to 5.5 V
VCC
50 pF
500 Ω
open
Definitions for test circuit:
RL = Load resistor.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.6 Load circuitry for switching times.
2004 Sep 10
8
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
PACKAGE OUTLINES
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2004 Sep 10
REFERENCES
IEC
JEDEC
EIAJ
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2004 Sep 10
REFERENCES
IEC
JEDEC
EIAJ
SC-74
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L1
e
6
5
e1
4
e1
6×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
1.5
1.4
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
2004 Sep 10
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
MO-252
11
Philips Semiconductors
Product specification
Dual buffer gate
74LVC2G34
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Sep 10
12
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R20/02/pp13
Date of release: 2004
Sep 10
Document order number:
9397 750 13784