PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP95N03LT in SOT78 (TO-220AB) PHB95N03LT in SOT404 (D2-PAK) PHE95N03LT in SOT226 (I2-PAK). 2. Features ■ Low on-state resistance ■ Fast switching. 3. Applications ■ High frequency computer motherboard DC to DC converters c c 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base, connected to drain (d) Simplified outline Symbol mb mb mb [1] d g 2 1 1 2 3 3 MBK112 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. SOT226 (I2-PAK) MBB076 s PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS drain-source voltage (DC) Conditions Typ Max Unit Tj = 25 to 175 °C − 25 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V − 75 A Ptot total power dissipation Tmb = 25 °C − 125 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A 5 7 mΩ VGS = 5 V; ID = 25 A 7.5 9 mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C − 25 V VDGR drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 kΩ − 25 V VGS gate-source voltage (DC) − ±15 V VGSM gate-source voltage tp ≤ 50 µs; pulsed; duty cycle 25 %; Tj ≤ 150 °C − ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 − 75 A Tmb = 100 °C; VGS = 5 V; Figure 2 − 61 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 240 A Ptot total power dissipation Tmb = 25 °C; Figure 1 − 125 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C − 75 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 240 A Avalanche ruggedness EAS non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C; − 120 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C − 75 A © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 2 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 03ad94 03ac97 120 120 Ider (%) 100 Pder 110 (%) 100 90 80 80 70 60 60 50 40 40 30 20 20 10 0 0 20 40 60 80 100 120 140 160 180 Tmb (oC) 0 0 P tot P der = ---------------------- × 100% P ° 60 120 Tmb (ºC) 180 ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ad77 103 ID (A) RDSon = VDS / ID tp = 10 µs 100 µs 102 1 ms D.C. 10 δ= P 10 ms tp 100 ms T t tp T 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 3 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Conditions Value Unit Figure 4 1.2 K/W vertical in still air; SOT78 package 60 K/W vertical in still air; SOT226 package 65 K/W mounted on a printed circuit board; minimum footprint; SOT404 and SOT226 packages 50 K/W 7.1 Transient thermal impedance 03ad76 10 Zth(j-sp) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 δ= P 0.02 tp T 10-2 single pulse t tp T 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 4 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 25 − − V Tj = −55 °C 22 − − V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 0.25 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 − − V Tj = −55 °C − − 2.3 V Tj = 25 °C − 0.05 10 µA Tj = 175 °C − − 500 µA − 10 100 nA Tj = 25 °C − 7.5 9 mΩ Tj = 175 °C − 13 15.5 mΩ − 5 7 mΩ VDS = 25 V; VGS = 0 V IGSS gate-source leakage current VGS = ±5 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Figure 7 and 8 VGS = 10 V; ID = 25 A; Tj = 25 °C Dynamic characteristics gfs forward transconductance VDS = 25 V; ID = 50 A Figure 11 − 50 − S Qg(tot) total gate charge − 43 − nC Qgs gate-source charge ID = 50 A; VDD = 12 V; VGS = 4.5 V; Figure 14 − 12 − nC Qgd gate-drain (Miller) charge − 16 − nC Ciss input capacitance − 2200 − pF Coss output capacitance − 770 − pF Crss reverse transfer capacitance − 500 − pF td(on) turn-on delay time tr turn-on rise time td(off) tf VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 − 10 20 ns − 30 50 ns turn-off delay time − 110 140 ns turn-off fall time − 80 100 ns − 0.85 1.2 V − 0.9 − V VDD = 15 V; ID = 15 A; VGS = 10 V; RG = 6 Ω; resistive load Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13 IS = 40 A; VGS = 0 V © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 5 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 03ad78 03ad80 75 75 10 V 5 V ID (A) 60 3.5 V Tj = 25ºC ID (A) 60 45 VDS > ID x RDSon 45 3V 30 30 15 15 175 ºC Tj = 25 ºC VGS = 2.5V 0 0 0 0.4 0.8 1.2 1.6 VDS (V) 2 Tj = 25 °C 0 1 2 3 VGS (V) 4 Tj = 25 °C and 175 °C; VDS ≥ ID x RDSON Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ad57 03ad79 2 0.06 RDSon (Ω) 0.05 2.5 V Tj = 25 ºC a VGS = 3 V 1.6 0.04 1.2 0.03 0.8 0.02 3.5 V 0.4 0.01 5V 10 V 0 0 0 15 30 45 60 ID (A) 75 Tj = 25 °C -60 60 120 Tj (ºC) 180 R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification 0 Rev. 01 — 02 February 2001 6 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 03aa33 2.5 V GS(th) (V) ID (A) 10-2 max 2 typ 10-3 1.5 min 1 10-4 0.5 10-5 min typ max 10-6 0 -60 -20 20 60 100 0 140 180 Tj (oC) 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03aa81 90 gfs (S) 75 03aa36 10-1 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aD83 104 VDS > ID x RDSon Ciss, Coss, Crss (pF) 60 Ciss Tj = 25 ºC Coss 103 45 175 ºC 30 Crss 15 102 0 0 15 30 45 10-1 60 ID (A) 75 Tj = 25 °C and 175 °C; VDS > ID × RDSon 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification 1 Rev. 01 — 02 February 2001 7 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 03ad82 03ad84 75 10 IS VGS = 0 V (A) 60 VGS ID = 50 A (V) Tj = 25 ºC 8 45 6 30 4 175 ºC Tj = 25 ºC 15 VDD = 6 V 12 V 24 V 2 0 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 175 °C; VGS = 0 V 0 60 QG (nC) 90 ID = 50 A; VDD = 24 V, 12 V and 6 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification 30 Rev. 01 — 02 February 2001 8 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 P q mounting base D1 D L1 L2(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 99-09-13 00-09-07 Fig 15. SOT78 (TO-220AB). © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 9 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.40 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT404 Fig 16. SOT404 (D2-PAK) © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 10 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor Plastic single-ended package; low-profile 3 lead TO-220AB SOT226 A A1 E D1 mounting base D L1 L2 Q b1 L 1 2 3 b e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max Q mm 4.5 4.1 1.40 1.27 0.9 0.7 1.3 1.0 0.7 0.4 9.65 8.65 1.5 1.1 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT226 REFERENCES IEC JEDEC EIAJ low-profile 3-lead TO-220AB EUROPEAN PROJECTION ISSUE DATE 99-05-27 99-09-13 Fig 17. SOT226 (I2-PAK) © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 11 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 10. Revision history Table 6: Revision history Rev Date 01 CPCN 20010202 - Description Product specification; initial version © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 12 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2001 All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 13 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. 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All rights reserved. 9397 750 07814 Product specification Rev. 01 — 02 February 2001 14 of 15 PHP95N03LT series Philips Semiconductors N-channel TrenchMOS transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 February 2001 Document order number: 9397 750 07814