PHILIPS BLS3135-50

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-50
Microwave power transistor
Product specification
Supersedes data of 1998 Apr 06
1999 Aug 16
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
FEATURES
PINNING - SOT422A
• Suitable for short and medium pulse applications
PIN
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
DESCRIPTION
1
collector
2
emitter
3
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
3
3
2
MBK051
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
Pulsed, class-C
f
(GHz)
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
3.1 to 3.5
40
50
typ. 8
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Aug 16
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
V
VCES
collector-emitter voltage
RBE = 0
−
75
V
VEBO
emitter-base voltage
open collector
−
2
V
ICM
peak collector current
tp ≤ 100 µs; δ ≤ 10%
−
6
A
Ptot
total power dissipation
tp = 100 µs; δ = 10%; Tmb = 25 °C
−
80
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
up to 0.2 mm from ceramic cap;
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
Zth j-h
PARAMETER
CONDITIONS
thermal impedance from junction to heatsink
VALUE
UNIT
tp = 100 µs; δ = 10%; note 1
0.71
K/W
tp = 300 µs; δ = 10%; note 1
0.99
K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm
spotsize at hotspot.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
75
−
V
V(BR)CES
collector-emitter breakdown voltage IC = 15 mA; VBE = 0
75
−
V
ICBO
collector leakage current
−
1.5
mA
ICES
collector leakage current
VCE = 40 V; VBE = 0
−
3
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC = 0
−
0.3
mA
hFE
DC current gain
VCB = 5 V; IC = 1.5 A
40
−
IC = 15 mA; open emitter
VCB = 40 V; IE = 0
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 µs; δ = 10%
3.1 to 3.5
40
≥50
typ. 55
≥7
typ. 8
≥35
typ. 40
1999 Aug 16
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
MCD758
80
MCD759
10
Gp
handbook, halfpage
handbook, halfpage
PL
(W)
(dB)
(2)
(1)
8
(3)
60
6
(1)
(2)
(3)
4
40
2
20
0
(3)
−2
0
0
2
4
6
8
10
PD (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.2
20
0
40
60
PL (W)
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Load power as a function of drive power;
typical values.
Fig.3
MCD760
50
ηC
Power gain as a function of load
power; typical values.
MCD761
10
Gp
handbook, halfpage
handbook, halfpage
(%)
40
(2)
80
(dB)
8
(1)
Gp
Return
Losses
20
Return
Losses
(dB)
16
(3)
30
6
12
20
4
8
10
2
4
0
20
0
40
60
PL (W)
0
3.0
80
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.4
3.2
3.3
3.4
3.5
f (GHz)
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
Collector efficiency as a function of load
power; typical values.
1999 Aug 16
0
3.1
Fig.5
4
Power gain and input return losses as
functions of frequency; typical values.
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
30
handbook, full pagewidth
30
40
C1
input
output
C2
MCD762
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
1999 Aug 16
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT422A
D
A
F
3
D1
U1
B
q
C
c
1
L
H
p
U2
E1
E
w1 M A M B M
A
L
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
mm
5.72
4.83
5.21
4.95
0.13
0.08
9.93
9.68
10.29
10.03
8.76
8.51
10.29
10.03
1.58
1.47
19.18
17.65
4.52
3.74
3.43
3.18
3.35
2.92
16.51
22.99
22.73
9.91
9.65
0.25
0.76
inches
0.225
0.190
0.205
0.195
0.005
0.003
0.391
0.381
0.405
0.395
0.345
0.335
0.405
0.395
0.062
0.058
0.755
0.695
0.178
0.147
0.135
0.125
0.132
0.115
0.65
0.905
0.895
0.390
0.380
0.01
0.03
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT422A
1999 Aug 16
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 16
7
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© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
125002/02/pp8
Date of release: 1999
Aug 16
Document order number:
9397 750 05992