INTEGRATED CIRCUITS DATA SHEET TDA1562Q 70 W high efficiency power amplifier with diagnostic facility Preliminary specification File under Integrated Circuits, IC01 1998 Apr 07 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q FEATURES • Fast mute on supply voltage drops • Very high output power, operating from a single low supply voltage • Quick start option (e.g. car-telephony/navigation) • Low power dissipation, when used for music signals • Load dump protection • Switches to low output power at too high case temperatures • Short-circuit safe to ground, supply voltage and across the load • Few external components • Low power dissipation in any short-circuit condition • Fixed gain • Protected against electrostatic discharge • Differential inputs with high common mode rejection • Thermally protected • Mode select pin (on, mute and standby) • Flexible leads. • Low (delta) offset voltage at the outputs • Status I/O pin (class-H, class-B and fast mute) • All switching levels with hysteresis GENERAL DESCRIPTION • Diagnostic pin with information about: The TDA1562Q is a monolithic integrated 70 W/4 Ω Bridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17-lead DIL-bent-SIL plastic power package. – Dynamic Distortion Detector (DDD) – Any short-circuit at outputs – Open load detector The device can be used for car audio systems (e.g. car, radio and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and TV sound). – Temperature protection. • No switch-on or switch-off plops QUICK REFERENCE DATA Test conditions: VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. TYP. MAX. UNIT operating 8 14.4 18 V non-operating − − 30 V load dump − − 45 V Iq(tot) total quiescent current on and mute; RL = open circuit − 110 150 mA Istb standby current standby − 1 50 µA VOO output offset voltage on and mute − − 100 mV on ↔ mute ∆VOO delta output offset voltage − − 30 mV Gv voltage gain 25 26 27 dB Zi(dif) differential input impedance 90 150 − kΩ Po output power 45 55 − W THD total harmonic distortion THD = 0.5% THD = 10% 60 70 − W Po = 1 W − 0.03 − % Po = 20 W − 0.06 − % DDD active − 10 − % SVRR supply voltage ripple rejection on and mute 60 70 − dB CMRR common mode rejection ratio on 70 80 − dB ISRR input signal rejection ratio mute 80 90 − dB Vn(o) noise output voltage on − 100 150 µV 1998 Apr 07 2 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA1562Q DESCRIPTION DBS17P VERSION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 BLOCK DIAGRAM C1− handbook, full pagewidth 3 status I/O mode select 16 4 CLASS-B CLASS-H FAST MUTE C1+ 5 9 VP2 10 LOAD DUMP PROTECTION TEMPERATURE SENSOR disable STANDBY MUTE ON VP1 LIFT-SUPPLY CURRENT PROTECTION VP* IN+ 1 + PREAMP − 75 kΩ 75 kΩ Vref − PREAMP + 2 TDA1562Q LOAD DETECTOR DYNAMIC DISTORTION DETECTOR 8 11 POWERSTAGE diagnostic OUT− VP* 14 15 kΩ signal 17 GND OUT+ DIAGNOSTIC INTERFACE FEEDBACK CIRCUIT IN− 7 POWERSTAGE disable LIFT-SUPPLY TEMPERATURE PROTECTION 15 C2− 6 PGND1 reference voltage MGL264 13 C2+ Fig.1 Block diagram. 1998 Apr 07 3 12 PGND2 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q PINNING SYMBOL PIN DESCRIPTION IN+ 1 signal input (positive) IN− 2 signal input (negative) C1− 3 negative terminal of lift electrolytic capacitor 1 MODE 4 mode select input C1+ 5 positive terminal of lift electrolytic capacitor 1 PGND1 6 power ground 1 OUT+ 7 positive output DIAG 8 diagnostic output (open collector) VP1 9 supply voltage 1 VP2 10 supply voltage 2 VP1 9 OUT− 11 negative output VP2 10 PGND2 12 power ground 2 OUT− 11 C2+ 13 positive terminal of lift electrolytic capacitor 2 Vref 14 internal reference voltage C2− 15 negative terminal of lift electrolytic capacitor 2 STAT 16 status I/O SGND 17 signal ground handbook, halfpage IN+ 1 IN− 2 C1− 3 MODE 4 C1+ 5 PGND1 6 OUT+ 7 DIAG 8 TDA1562Q PGND2 12 C2+ 13 Vref 14 C2− 15 STAT 16 SGND 17 MGL263 Fig.2 Pin configuration. 1998 Apr 07 4 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q FUNCTIONAL DESCRIPTION Status I/O input (pin STAT) The TDA1562Q contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. Due to this momentarily higher supply voltage the obtainable output power is 70 W. INPUT This input has 3 possibilities: 1. LOW, ‘fast mute’: the circuit remains switched on, but the input signal is suppressed 2. MID, ‘class-B’: the circuit operates as class-B amplifier, the high power supply voltage is disabled, independent of the case temperature In normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the reduction in dissipation is about 50% when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals. If the case temperature exceeds 120 °C, the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 20 W. 3. HIGH, ‘class-H’: the circuit operates as class-H amplifier, the high power supply voltage is enabled, independent of the case temperature. When the circuit is switched from fast mute to class-B/H or vice versa the switching is immediately carried out. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. OUTPUT When the supply voltage drops below the minimum operating level, the amplifier will be muted immediately. This output has 3 possibilities: 1. LOW, ‘mute’: acknowledge of muted amplifier Mode select input (pin MODE) 2. MID, ‘class-B’: the circuit operates as class-B amplifier, the high power supply voltage is disabled, caused by the case temperature Tc > 120 °C This pin has 3 modes: 1. LOW, ‘standby’: the complete circuit is switched off, the supply current is very low 3. HIGH, ‘class-H’: the circuit operates as class-H amplifier, the high power supply voltage is enabled, because the case temperature Tc < 120 °C. 2. MID, ‘mute’: the circuit is switched on, but the input signal is suppressed When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. 3. HIGH, ‘on’: normal operation, the input signal is amplified by 26 dB. When the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. The circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation). 1998 Apr 07 The status I/O pins of maximum 8 devices may be tied together for synchronizing purposes. 5 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth supply voltage TDA1562Q on mute 0 HIGH mode select input MID LOW Vref reference voltage VRT 0 HIGH status I/O input MID LOW HIGH status I/O output class-H (Tc < 120 °C) MID class-B (Tc > 120 °C) LOW output voltage across load 0 quick start mute zerocross change class B/H-operation fast mute function zerocross mute function supply mute function MGL272 Fig.3 Switching characteristics. 1998 Apr 07 6 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q Diagnostic output (pin DIAG) TEMPERATURE DETECTION DYNAMIC DISTORTION DETECTOR (DDD) Just before the temperature protection becomes active the diagnostic output becomes continuously LOW. At the onset of clipping of the output stages, the DDD becomes active. This information can be used to drive a sound processor or DC-volume control to attenuate the input signal and so limit the distortion. Load detection: directly after the circuit is switched from standby to mute or on, a build in detection circuit checks whether a load is present. The results of this check can be detected at the diagnostic output, by switching the mode select input in the mute mode. SHORT-CIRCUIT PROTECTION Since the diagnostic output is an open collector output, more devices can be tied together. When a short-circuit occurs at the outputs to ground or to the supply voltage, the output stages are switched off. They will be switched on again approximately 20 ms after removing the short-circuit. During this short-circuit condition the diagnostic output is continuously LOW. When a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. After that time is checked during approximately 50 µs whether the short-circuit is still present. During this short-circuit condition the diagnostic output is LOW for 20 ms and high for 50 µs. The power dissipation in any short-circuit condition is very low. HIGH handbook, full pagewidth mode select input MID LOW output voltage across load 0 HIGH diagnostic output no load LOW t short-circuit to supply or ground clipping signal Fig.4 Diagnostic information. 1998 Apr 07 7 short-circuit across load MGL265 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q status I/O: high class-H handbook, full pagewidth maximum output voltage swing status I/O: open class-B 0 HIGH diagnostic output LOW HIGH status I/O output MID LOW 100 120 145 150 160 Tj (°C) MGL266 Fig.5 Behaviour as a function of temperature. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP IOSM PARAMETER CONDITIONS MIN. MAX. UNIT operating − 18 V non-operating − 30 V load dump; tr > 2.5 ms; T = 50 ms − 45 V non-repetitive peak output current − 10 A repetitive peak output current − 8 A supply voltage Vsc short-circuit safe voltage − 18 V Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 − °C Tj junction temperature − 150 °C Ptot total power dissipation − 60 W note 1 Note 1. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 747-1). 1998 Apr 07 8 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-c) thermal resistance from junction to case Rth(j-a) thermal resistance from junction to ambient VALUE in free air UNIT 1.5 K/W 40 K/W DC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP1 and VP2 (pins 9 and 10) VP supply voltage 8 Vth+ supply threshold voltage mute → on − Vth− supply threshold voltage on → mute 7 VPH1 hysteresis (Vth+ − Vth−) − Iq quiescent current on and mute; RL = open circuit Istb standby current 14.4 18 V − 9 V − − V 200 − mV − 110 150 mA standby − 1 50 µA Amplifier outputs OUT+ and OUT− (pins 7 and 11) VO DC output voltage on and mute − 6.5 − V VOO output offset voltage on and mute − − 100 mV ∆VOO delta output offset voltage on ↔ mute − − 30 mV 0 − Vp V Mode select input MODE (pin 4) VI input voltage range II input current VMODE = 14.4 V − − 20 µA Vth1+ threshold voltage standby → mute − − 2 V Vth1− threshold voltage mute → standby 1 − − V VmsH1 hysteresis (Vth1+ − Vth1−) − 200 − mV Vth2+ threshold voltage mute → on − − 4.2 V Vth2− threshold voltage on → mute 3.3 − − V VmsH2 hysteresis (Vth2+ − Vth2−) − 200 − mV 0 − VP V Status I/O STAT (pin 16) PIN STAT AS INPUT Vst input voltage IstH HIGH-level input current VSTAT = 14.4 V − − 4 mA IstL LOW-level input current VSTAT = 0 V − − −400 µA Vth1+ threshold voltage fast mute → class B − − 2 V Vth1− threshold voltage class B → fast mute 1 − − V VstH1 hysteresis (Vth1+ − Vth1−) − 200 − mV Vth2+ threshold voltage class B → class H − − 4.2 V Vth2− threshold voltage class H → class B 3.3 − − V VstH2 hysteresis (Vth2+ − Vth1−) − 200 − mV 1998 Apr 07 9 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility SYMBOL TDA1562Q PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PIN STAT AS OUTPUT Ist(mute) mute acknowledge sink current Vst(mute) mute acknowledge output voltage Ist(clB) class B operation output current Vst(clB) class B operation output voltage Ist(clH) class H operation source current Vst(clH) class H operation output voltage Tc(th) threshold case temperature sensor Ist = 2.2 mA IIst = 15 µAI Ist = −140 µA 2.2 − − mA − − 0.5 V 15 − − µA 2.0 − 3.0 V −140 − − µA VP − 2.5 − − V − 120 − °C − − 0.6 V Diagnostic output DIAG (pin 8) VDIAG output voltage RL load resistance for open load detection 100 − − Ω Tj(th) threshold junction temperature sensor − 145 − °C 1998 Apr 07 active LOW 10 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth TDA1562Q on-mode fast mute VPH1 Vth− VP Vth+ MGL267 Fig.6 Supply voltage transfer characteristic. handbook, full pagewidth on-mode mute standby VmsH2 VmsH1 Vth1− Vth2− Vth1+ Vms Vth2+ MGL268 Fig.7 Mode select transfer characteristic. handbook, full pagewidth class-H class-B fast mute VstH1 Vth1− VstH2 Vth2− Vth1+ Vst Vth2+ MGL269 Fig.8 Status I/O transfer characteristic. 1998 Apr 07 11 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q AC CHARACTERISTICS VP = 14.4; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT class-B; THD = 10% 16 20 − W class-H; THD = 10% 60 70 − W class-H; THD = 0.5% 45 55 − W fro(h)(P) high frequency power roll-off Po (−1 dB); THD = 0.5%; note 1 − 20 − kHz THD total harmonic distortion Po = 1 W − 0.03 − % Po = 20 W − 0.06 − % DDD active − 10 − % 25 26 27 dB 20 − − kHz 90 150 − kΩ 60 70 − dB 90 − dB Gv voltage gain fro(h)(G) high frequency gain roll-off Zi(dif) differential input impedance SVRR supply voltage ripple rejection Gv (−1 dB); note 2 on and mute; note 3 standby; note 3 CMRR common mode rejection ratio on; note 4 70 80 − dB ISRR input signal rejection ratio mute; note 5 80 90 − dB Vn(o) noise output voltage on; note 6 − 100 150 µV mute; notes 6 and 7 − 60 − µV Notes 1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. The low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. Supply voltage ripple rejection is measured across RL; Vripple = Vripple max. = 2 VPP. 4. Common mode rejection ratio is measured across RL; Vcm = Vcm max. = 2 VPP. CMMR [dB] = differential gain (Gv) + common mode attenuation (Ac), (Test setup according Fig. 9; mismatch of input coupling capacitors excluded). 5. Input signal rejection ratio is measured across RL; Vi = Vi(max) = 2 VPP. ISSR [dB] = different gain (Gv) + mute attenuation (Am) 6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 7. Noise output voltage is independent of source impedance Rs. 1998 Apr 07 12 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q + VP handbook, full pagewidth 9 Ci Ci VCM 10 supply 7 1 RL TDA1562 11 2 14 SGND 17 PGND1 PGND2 6 12 GND MGL270 Fig.9 CMRR test setup. QUALITY SPECIFICATION Quality in accordance with “SNW-FQ-611 part E”, if this type is used as an audio amplifier. 1998 Apr 07 13 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... mode select 100 nF 16 4 CLASS-B CLASS-H FAST MUTE 1/2*Rs LIFT-SUPPLY + − 75 kΩ CURRENT PROTECTION AMP. 75 kΩ − 2 + IN− AMP. TDA1562Q LOAD DETECTOR + VP 10 kΩ DYNAMIC DISTORTION DETECTOR 8 RL = 4Ω diagnostic 11 OUT− VP* 14 Vref 15 kΩ 17 OUT+ POWERSTAGE disable LIFT-SUPPLY TEMPERATURE PROTECTION reference voltage signal GND 13 C2+ Fig.10 Test and application circuit. 12 PGND2 GND MGL271 TDA1562Q 4700 µF 6 PGND1 Preliminary specification 15 C2− handbook, full pagewidth 14 FEEDBACK CIRCUIT 1/2*Rs 7 POWERSTAGE DIAGNOSTIC INTERFACE audio source 10 µF disable VP* 1 IN+ 100 nF 9 LOAD DUMP PROTECTION TEMPERATURE SENSOR STANDBY MUTE ON VP1 Philips Semiconductors status I/O 5 70 W high efficiency power amplifier with diagnostic facility C1+ 3 + VP TEST AND APPLICATION INFORMATION 1998 Apr 07 C1− 2200 µF 100 nF VP2 10 4700 µF Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-03-11 97-12-16 SOT243-1 1998 Apr 07 EUROPEAN PROJECTION 15 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Apr 07 16 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q NOTES 1998 Apr 07 17 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q NOTES 1998 Apr 07 18 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q NOTES 1998 Apr 07 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 545102/1200/01/pp20 Date of release: 1998 Apr 07 Document order number: 9397 750 03043