Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.PD-6.0027A IRSF3010 FULLY PROTECTED POWER MOSFET SWITCH General Description: Rating Summary: The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections. Vds(clamp) Rds(on) 80 mΩ The on chip protection circuit latches off the POWER MOSFET in case the drain current exceeds 14A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn off with inductive loads. Ids(sd) 11 A Tj(sd) 155 °C EAS 400 mJ The input current requirements are very low (300uA) which makes the IRSF3010 compatible with most existing designs based on standard POWER MOSFETs. Applications: n DC Motor Drive n Solenoid Driver 50 V Features: n Extremely Rugged for Harsh Operating Environments n Over Temperature Protection n Over Current Protection n Active Drain to Source Clamp n ESD Protection n Compatible with standard POWER MOSFET n Low Operating Input Current n Monolithic Construction n Dual set/reset Threshold Input Drain Pin Assignment Pin 1 - Input Pin 2 - Drain Pin 3 - Source Tab - Drain Tab IRSF3010 1 2 3 IRSF3010S IRSF3010 - Block Diagram Source To Order Available Packages Previous Datasheet Index Next Data Sheet IRSF3010 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless otherwise specified.) Symbol Vds, max Vin, max Ids Pd Parameter Definition Min. Max. Units Test Conditions Continuous Drain to Source Voltage — 50 Continuous Input Voltage -0.3 10 Continuous Drain Current — Power Dissipation — 40 W — 0.33 W/°C mJ Linear Derating Factor for Tc > 25°C V self limited EAS Unclamped Single Pulse Inductive Energy — 400 Vesd1 Vesd2 Electrostatic Discharge Voltage (Human Body Model) — 4000 — 1000 TJop Junction Temperature -55 self-limited TStg Storage Temperature -55 175 TL Lead Temperature (Soldering, 10 seconds) — 300 (Machine Model) V Tc ≤ 25°C 1000pF. 1.5kΩ 200pF, 0Ω o C Static Electrical Characteristics (Tc = 25°C unless otherwise specified.) Symbol Vds,clamp Rds(on) Idss Parameter Definition Min. Typ. Max. Units Drain to Source Clamp Voltage Drain to Source On Resistance Drain to Source Leakage Current 50 54 — — 56 62 80 — 70 — 85 — — 53 — — — 10 — — 100 — 10 250 Vth Input Threshold Voltage 1.5 2.0 2.5 I i, on Input Supply Current (Normal Operation) — 0.25 0.6 — 0.35 0.85 Ii, off Input Supply Current (Protection Mode) — 0.5 1.0 — 0.6 1.2 10 10.8 — — 1.2 1.5 Vin, clamp Input Clamp Voltage Vsd Body-Drain Diode Forward Drop ➁ V mΩ µA Test Conditions Ids = 10mA Ids = 11A, tp = 700 µ S Vin = 5V, Ids = 4A Vin = 4V, Ids = 4A Vin = 10V, I ds = 4A Vds = 12V, Vin = 0V Vds = 50V, Vin = 0V Vds =40V,Vin=0V,Tc =150oC V mA Vds = 5V, Ids = 1mA Vin = 5V Vin = 10V Vin = 5V Vin = 10V V Iin = 10mA Ids = -17A, Rin = 1kΩ Thermal Characteristics Symbol RΘjc RΘjA 2 Parameter Definition Min. Typ. Max. Units Thermal Resistance, Junction to Case — 3.0 — °C/W Thermal Resistance, Junction to Ambient — 60 — °C/W To Order Test Conditions Previous Datasheet Index Next Data Sheet IRSF3010 Switching Electrical Characteristics: (Vcc = 14V, Resistive Load RL = 5Ω, Tc = 25 °C.) Please refer to Figure 15 for switching time definitions. Symbol tdon Parameter Definition Turn-On Delay time tr Rise Time tdoff Turn-Off Delay time tf Min. Fall Time Typ. Max. Units Test Conditions — 425 650 — 150 — Vin = 5V Vin = 10V — 2000 4000 — 425 — — 650 1000 — 850 — — 500 800 Vin = 5V Vin = 10V Vin = 5V — 450 — Vin = 10V nS Vin = 5V Vin = 10V Protection Characteristics: (Tc = 25 °C unless otherwise specified.) Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Ids(sd) Tj(sd) Over-Current Shutdown Threshold 11 14 17 A Vin = 5V Over Temperature Shutdown Threshold 155 165 — °C Vin = 5V, Ids = 2A Vprotect tIresp Minimum Input Voltage for Over-temp fxn. — 3 — V µS Over Current Response Time — 2 — tIblank Ipeak Over Current Blanking Time — 3 — Peak Short Circuit Current — 20 — A Vreset treset Protection Reset Voltage — 1.3 — V Protection Reset Time — 7 — tTresp OverTemperature Response Time — 12 — µS See figure 16 for definition See figure 16 for definition See figure 16 for definition See figure 17 for definition See figure 18 for definition Temperature Coefficients of Electrical Characteristics: (Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters. Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Vds,clamp Temperature Coefficient of Drain to Source Clamp Voltage Temperature Coefficient of Input Threshold Voltage Vin,clamp Temperature Coefficient of Input Clamp Voltage Ids(sd) Temperature Coefficient of Over-Current Shutdown Threshold — 18.2 Ids = 10mA — Vth — -3.2 — — 7.0 — — -21.5 — mV/oC Vds = 5V, Ids = 1mA Iin = 10mA mA/oC Vin = 5V Notes: 1. EAS is tested with a constant current source of 11A applied for 700µS with Vin = OV and starting Tj = 25oC. 2. Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is forward biased. To Order 3 Previous Datasheet Index Next Data Sheet IRSF3010 120 120 T = 25°C Ids = 4A 110 Rds(on) (mOhm) Rds(on) (mOhm) 110 100 Vin = 4V 90 80 Vin = 5V 70 Vin = 7V 60 100 90 Vin = 5V 80 70 60 50 50 30 -50 40 2 4 6 8 10 12 14 Vin = 10V 40 Vin = 10V 16 18 -25 0 25 50 75 100 125 150 Temperature (°C) Ids (A) Fig. 3 - On Resistance vs Drain to Source Current Fig. 4 - On Resistance vs. Temperature 16 17 15 Shut Down Current (A) Shut Down Current (A) T = 25°C 16 15 14 Vin = 5V 14 13 12 11 10 13 4 5 6 7 8 9 -50 10 -25 0 Fig. 5 - Over-current Shutdown Threshold vs Input Voltage 75 100 125 150 3500 Vdd = 25V Single Pulse Energy to Failure (mJ) T=25°C 1.4 1.2 Input Current (mA) 50 Fig. 6 - Over-current Shutdown Threshold vs Temperature 1.6 1 0.8 Iin,off 0.6 0.4 Iin,on 0.2 3000 2500 Ids = 8A 2000 1500 1000 500 0 0 1 2 3 4 5 6 7 8 9 10 11 Figure 7 - Input Current vs. Input Voltage Ids = 12A Rating 0 0 25 50 75 100 125 150 Starting Junction Temperature (°C) Input Voltage (Volts) 4 25 Temperature (°C) Input Voltage (Volts) Fig. 8 - Unclamped Single Pulse Inductive Energy to Failure vs Starting Junction Temperature To Order Previous Datasheet Index Next Data Sheet IRSF3010 2.50 2.50 R ise T ime, On Delay (µS) Rise T ime, On Delay (µS ) T = 25°C 2.00 1.50 Rise Time 1.00 On Delay 0.50 0.00 2.00 Rise Time 1.50 Vin = 5V 1.00 On Delay 0.50 0.00 3 4 5 6 7 8 9 10 11 -50 -25 0 Input Voltage (Volts) 25 50 75 100 125 150 Temperature (°C) F ig. 9 - Tu rn on characteristics vs Input Voltag e F ig. 10 - Turn on characteristics vs Temperature 0.9 0.9 0.8 F all T ime, Off Delay (µS) Fall T ime, Off Delay (µS ) T = 25°C Off Delay 0.7 0.6 Fall Time 0.5 0.4 0.3 0.8 0.7 Off Delay 0.6 Vin = 5V 0.5 Fall Time 0.4 0.3 3 4 5 6 7 8 9 10 11 -50 -25 0 Input Voltage (Volts) Fig. 11 - T urn off characteristics vs Input Voltage 50 75 100 125 150 Fig. 12 - Turn off characteristics vs Temperature 10 T hermal R esponse (°C/W) 100 Reverse Drain Current (A) 25 Temperature (°C) T = 150°C 10 T = 25°C 1 Duty Factor = 0.5 1 DF= 0.50 0.20 0.10 0.05 0.02 0.01 0.00 0.1 0.1 0 0.01 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 1E-05 Source to Drain Voltage (Volts) Fig. 13 - Source-Drain Diode Forward Voltage 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse Duration tp (S) Fig. 14 - Tran sien t Thermal Impedan ce, Junction to Case To Order 5 Previous Datasheet Index Next Data Sheet IRSF3010 V in V in RL = 0 Vcc = 14V 5V 50% t t Vds I ds 90% I peak 10% t tdon tr tdoff tf Fig. 15 - Definition of Switching times. t Iblank t Iresp Short applied Short applied before turn-on after turn-on Fig. 16 - Definition of Ipeak, tIblank, tIresp V in V in 5V 5V t t I ds t < t reset t t > t reset I ds I ds(sd) t R L = 1 mH R L = 10 Ω Vcc = 14V Fig. 17 - Definition of treset 6 t t Tresp Vcc = 14V T J = TJSD + 5°C Fig. 18 - Definition of tTresp To Order Previous Datasheet Index Next Data Sheet IRSF3010 Case Outline TO-220AB (IRSF3010) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M, 1982 2. Controlling dimension: INCH 3. Dimensions shown are in millimeters (inches) 4. Conforms to JEDEC outline TO-251AA 5. Dimension does not include solder dip. Solder dip max. +0.16 (.006) LEAD ASSIGNMENTS 1. Gate 2. Drain 3. Source 4. Drain To Order 7 Previous Datasheet Index IRSF3010 Case Outline SMD-220 (IRSF3010S) 8 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet IRSF3010 Tape and Reel SMD-220 (IRSF3010S) To Order 9 Previous Datasheet Index Next Data Sheet IRSF3010 Application Information Block Diagram Introduction The zener diode between the input and the source (see figure 20) provides the ESD protection for the input and also limits the applicable voltage to the input to 10V. Protected monolithic POWER MOSFETs offer simple, cost effective solutions in applications where extreme operating conditions can occur. The margin between the operating conditions and the absolute maximum values can be narrowed resulting in better utilization of the device and lower cost. ESD protection also reduces the off-circuit failures during handling and assembly. General Description The IRSF3010 is a fully protected monolithic N-channel, logic level POWER MOSFET with 80mΩ (max) on-resistance. The built-in protections include overcurrent, over-temperature, ESD and active over-voltage protections. The over-current and over-temperature protection makes the IRSF3010 indestructible at any load conditions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3010 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads. The IRSF3010 Intelligent Power Switch that is available in the TO220 package offers an easy upgrade from non-protected devices. The R-S flip-flop memorizes the occurrence of an error condition and controls the Q2 and Q3 switches. The flip-flop can be cleared by holding the input low for the specified minimum duration. COMP1 and COMP2 comparators are used to compare the over-current and over-temperature signals with the built-in reference. Either comparator can reset the fault flip-flop and turn Q1 off. During fault condition, Q2 disconnects gate of Q1 from the input, Q3 shorts the gate and source of Q1, resulting in rapid turn-off of Q1. The zener diode between the gate and drain of Q1 turns Q1 on, when the drain to source voltage exceeds 55V. Switching Characteristics In the IRSF3010 the control logic and the protection circuits are powered from the input pin. When positive voltage appears at the input pin the R-S flip-flop turns Q2 on and connects the gate of the main device to the input. The turn-on speed is limited by the channel resistance of Q2 and the gate charge requirements of Q1. The typical switching waveforms at 5V input voltage are shown in figure 21. Using higher input voltage will improve the turn-on time but it does not affect the turnoff switching speed. Input voltage 5V/ Drain voltage 5V/ Drain Current: 1A/div. Time: 1µsV/div. Fig.20 Block Diagram 10 Fig.21 Waveforms switching clamped indictive load using 5V input voltage To Order Previous Datasheet Index Next Data Sheet IRSF3010 The typical waveforms at 7V input voltage are shown in figure 22. In typical switching applications, below 40kHz, the difference in switching losses between the IRSF3010 and the same size standard MOSFET is negligible. Input voltage 5V/ The typical waveforms at over-current shut-down are shown in figure 23. After turn-on the current in the inductor at the drain starts ramping up. At about 15A the over-current protection shuts down the device. Over-temperature Protection Figure 24 illustrates the operation of the over-temperature protection. The IRSF3010 switches a 1Ω resistive load to a 12V power supply. When the thermal balance is established the junction temperature is limited on pulse by pulse basis. Drain voltage 5V/ Input voltage 10V/div. Drain Current: 1A/ Drain voltage 5V/div. Time: 1µsV/div. Fig. 22 Switching waveforms with 7V Input voltage Over-current Protection Drain Current: 2A/div. When the drain current exceeds the preset limit the protection circuit resets the internal flip-flop and turns Q1 off. The normal operation can be restored by holding the input voltage below the specified threshold level (approx. 1.3V) for the specified minimum treset time. Time: 10µsV/div. Fig. 24 Over-temperature shut-down Over-voltage Protection Input voltage 5V/div. When the drain to source voltage exceeds 55V the zener diode between gate and drain turns the IRSF3010 on, before the breakdown voltage of the drain-source diode is reached. This greatly enhances the energy the device can withstand safely during turnoff of inductive loads compared to avalanche breakdown. Thus the device can be used for fast deenergization of inductive loads. The absorbed energy is limited only by the maximum junction temperature. Drain voltage 5V/div. Drain Current: 2A/div. Time: 10µsV/div. Fig. 23 Waveforms at over-current shut-down WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 12/96 To Order 11