STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET General features Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP Package VDSS(@Tj max) 550 550 550 550 V V V V RDS(on) <0.25 Ω <0.25 Ω <0.25 Ω <0.25 Ω ID 20 20 20 20 A A A A ■ HIGH dv/dt AND AVALANCHE CAPABILITIES ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE 3 12 3 1 2 I²PAK TO-220 3 3 1 D²PAK 1 2 TO-220FP Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances. Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies Order codes Sales Type Marking Package Packaging STB20NM50T4 B20NM50 D²PAK TAPE & REEL STB20NM50-1 B20NM50-1 I²PAK TUBE STP20NM505 P20NM50 TO-220 TUBE STP20NM50FP P20NM50FP TO-220FP TUBE September 2005 Rev 2 1/16 www.st.com 16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220/D²PAK/I²PAK VGS Gate-Source Voltage Unit TO-220FP ± 30 V ID Drain Current (continuous) at TC = 25°C 20 20 (Note 3) A ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (Note 3) A Drain Current (pulsed) 80 80 (Note 3) A Total Dissipation at TC = 25°C 192 45 W Derating Factor 1.2 0.36 W/°C IDM Note 2 PTOT dv/dt Note 1 Peak Diode Recovery voltage slope VISO Tj Tstg Table 2. Insulation Withstand Volatge (DC) 15 -- Operating Junction Temperature Storage Temperature V/ns 2000 -65 to 150 V °C Thermal data TO-220/D²PAK/I²PAK TO-220FP Unit 0.65 2.8 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-amb Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl Table 3. Avalanche characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj=25°C, ID=5A, VDD= 50V) 650 mJ 2/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test Conditions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current (VDS = 0) VGS = ±30V VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250 µA RDS(on) Static Drain-Source On Resistance VGS= 10 V, ID= 10 A Table 5. Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Parameter Forward Transconductance Max. 500 V VDS = Max Rating, 1 10 µA µA ±100 µA 4 5 V 0.20 0.25 Ω Typ. Max. Unit VDS = Max Rating,Tc = 125°C 3 Unit Test Conditions VDS > ID(ON) xRDS(ON)max, Min. 10 S Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance 1480 285 34 pF pF pF Equivalent Ouput Capacitance VGS=0, VDS =0V to 400V 130 pF f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Gate Input Resistance Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Qgd Typ. Dynamic Rg Qgs ID = 250µA, V GS= 0 Min. ID = 10A VDD=400V, ID = 20A VGS =10V (see Figure 15) 40 13 19 56 nC nC nC 3/16 2 Electrical characteristics Table 6. Symbol td(on) tr tr(Voff) tf tc Table 7. STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP Switching times Parameter Turn-on Delay Time Rise Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD=250 V, ID=10A, RG=4.7Ω, VGS=10V (see Figure 16) VDD=400 V, ID=20A, RG=4.7Ω, VGS=10V (see Figure 16) Typ. Max. Unit 24 16 ns ns 9 8.5 23 ns ns ns Source drain diode Symbol Parameter ISD ISDMNote 2 Source-drain Current Source-drain Current (pulsed) VSDNote 4 Forward on Voltage ISD=20A, V GS=0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=20A, di/dt = 100A/µs, VDD=100 V, Tj=25°C 350 4.6 26 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=20A, di/dt = 100A/µs, VDD=100 V, Tj=150°C 435 5.9 27 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 20 80 A A 1.5 V (1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 2.1 2 Electrical characteristics Electrical Characteristics (curves) Figure 1. Safe Operating Area for TO-220/D²PAK/I²PAK Figure 2. Thermal Impedance for TO-220/D²PAK/I²PAK Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP Figure 5. Output Characteristics Figure 6. Transfer Characteristics 5/16 2 Electrical characteristics STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP Figure 7. Transconductance Figure 8. Static Drain-Source on Resistance Figure 9. Gate Charge vs Gate -Source Voltage Figure 11. Capacitance Variations Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs vs Temperatute Temperature 6/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 2 Electrical characteristics Figure 13. Source-drain Diode Forward Characteristics 7/16 3 Test circuits 3 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP Test circuits Figure 14. Switching Times Test Circuit For Resistive Load Figure 15. Gate Charge Test Circuit Figure 16. Test Circuit For Indictive Load Switching and Diode Recovery Times Figure 18. Unclamped Inductive Load Test Circuit Figure 17. Unclamped Inductive Waveform 8/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 4 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/16 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 4 Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 11/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 4 Package mechanical data TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 12/16 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E TYP 8 10 E1 TYP. MAX. 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 13/16 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 5 Packing mechanical data 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP 6 6 Revision History Revision History Date Revision 05-Sep-2005 2 Changes Inserted Ecopack indication 15/16 6 Revision History STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16