PHILIPS MB2841BB

Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
• Output capability: +64mA/–32mA
• Latch-up protection exceeds 500mA per
FEATURES
• High speed parallel latches
• Live insertion/extraction permitted
• Extra data width for wide address/data
The MB2841 consists of two sets of ten
D-type latches with 3-State outputs. The
flip-flops appear transparent to the data when
Latch Enable (nLE) is High. This allows
asynchronous operation, as the output
transition follows the data in transition. On the
nLE High-to-Low transition, the data that
meets the setup and hold time is latched.
Jedec JC40.2 Std 17
• ESD protection exceeds 2000V per MIL
STD 883 Method 3015 and 200V per
Machine Model
paths or buses carrying parity
• Power-up 3-State
• Power-up reset
• Ideal where high speed, light loading, or
DESCRIPTION
Data appears on the bus when the Output
Enable (nOE) is Low. When nOE is High the
output is in the High-impedance state.
The MB2841 Bus interface register is
designed to provide extra data width for wider
data/address paths of buses carrying parity.
increased fan-in are required with MOS
microprocessors
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Tamb = 25°C; GND = 0V
TYPICAL
UNIT
tPLH
tPHL
Propagation delay
nDx to nQx
CL = 50pF; VCC = 5V
3.5
ns
CIN
Input capacitance
VI = 0V or VCC
4
pF
COUT
Output capacitance
VO = 0V or VCC; 3-State
7
pF
ICCZ
Total supply current
Outputs disabled; VCC = 5.5V
120
µA
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDER CODE
DRAWING NUMBER
52-pin Plastic Quad Flat Pack (PQFP)
-40°C to +85°C
MB2841BB
1418B
Vcc
1D3
1D2
GND
1D1
1D0
1LE
LOGIC SYMBOL
1OE
1Q0
1Q1
1Q2
1Q3
Vcc
PIN CONFIGURATION
45
52 51
50 49 48 47
46 45 44 43 42
È
È
È
1Q4
1
39 1D4
1Q5
2
38 1D5
1Q6
3
37 1D6
GND
4
36 1D7
1Q7
5
35 1D8
1Q8
6
1Q9
7
2Q0
8
32 2D1
2Q1
9
31 2D2
MB2841
52-pin PQFP
2Q3 11
29 2D3
2Q5 13
27 2D5
2D6
2D7
2D8
26
2D9
2OE
2Q9
2Q8
GND
2Q7
Vcc
2Q6
21 22 23 24 25
Vcc
28 2D4
2LE
2Q4 12
August 24, 1993
46
1LE
47
1OE
41
39
38
37
36
35
34
1D7 1D8
1D9
1Q0 1Q1 1Q2 1Q3 1Q4 1Q5 1Q6 1Q7 1Q8 1Q9
33 2D0
30 GND
17 18 19 20
42
1D0 1D1 1D2 1D3 1D4 1D5 1D6
34 1D9
2Q2 10
14 15 16
44
41 40
48
49
50
51
1
2
3
5
6
7
33
32
31
29
28
27
25
24
23
22
2D0 2D1 2D2 2D3 2D4 2D5 2D6
21
2LE
20
2OE
2D7 2D8
2D9
2Q0 2Q1 2Q2 2Q3 2Q4 2Q5 2Q6 2Q7 2Q8 2Q9
8
1
9
10
11
12
13
15
16
18
19
853-1668 10619
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
PIN DESCRIPTION
PIN NUMBER
SYMBOL
FUNCTION
45, 44, 42, 41, 39, 38, 37, 36, 35, 34,
33, 32, 31, 29, 28, 27, 25, 24, 23, 22
1D0 – 1D9
2D0 – 2D9
Data inputs
48, 49, 50, 51, 1, 2, 3, 5, 6, 7, 8, 9,
10, 11, 12, 13, 15, 16, 18, 19
1Q0 – 1Q9
2Q0 – 2Q9
Data outputs
47, 20
1OE, 2OE
Output enable inputs (active-Low)
Latch enable inputs (active rising edge)
46, 21
1LE, 2LE
4, 17, 30, 43
GND
Ground (0V)
14, 26, 40, 52
VCC
Positive supply voltage
LOGIC SYMBOL (IEEE/IEC)
47
46
45
20
EN
21
C1
EN
C1
48
33
44
49
32
9
42
50
31
10
41
51
29
11
39
1
28
12
38
2
27
13
37
3
25
15
36
5
24
16
35
6
23
18
34
7
22
19
1D
1D
8
FUNCTION TABLE
INPUTS
H =
h =
L =
l =
↓ =
NC=
X =
Z =
OUTPUTS
OPERATING MODE
nOE
nLE
nDx
nQ0 – nQ9
L
L
H
H
L
H
L
H
Transparent
L
L
↓
↓
l
h
L
H
Latched
H
X
X
Z
High impedance
L
L
X
NC
High voltage level
High voltage level one set-up time prior to the High-to-Low LE transition
Low voltage level
Low voltage level one set-up time prior to the High-to-Low LE transition
High-to-Low LE transition
No change
Don’t care
High impedance “off” state
August 24, 1993
2
Hold
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
LOGIC DIAGRAM
nD0
nD1
D
L
nD2
D
Q
L
nD3
D
Q
nD4
D
L
Q
L
nD5
D
Q
nD6
D
L
Q
L
nD7
D
Q
L
nD8
D
Q
L
nD9
D
Q
D
L
Q
L
Q
nLE
nOE
nQ0
nQ1
nQ2
nQ3
nQ4
nQ5
nQ6
nQ7
nQ8
nQ9
ABSOLUTE MAXIMUM RATINGS1, 2
PARAMETER
SYMBOL
VCC
CONDITIONS
RATING
UNIT
–0.5 to +7.0
V
–18
mA
–1.2 to +7.0
V
VO < 0
–50
mA
output in Off or High state
–0.5 to +5.5
V
output in Low state
128
mA
–65 to 150
°C
DC supply voltage
IIK
DC input diode current
VI
DC input voltage3
IOK
DC output diode current
VI < 0
voltage3
VOUT
DC output
IOUT
DC output current
Tstg
Storage temperature range
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
LIMITS
DC supply voltage
UNIT
Min
Max
4.5
5.5
V
0
VCC
V
VI
Input voltage
VIH
High-level input voltage
VIL
Low-level Input voltage
0.8
V
IOH
High-level output current
–32
mA
IOL
Low-level output current
64
mA
0
5
ns/V
–40
+85
°C
∆t/∆v
Input transition rise or fall rate
Tamb
Operating free-air temperature range
August 24, 1993
2.0
3
V
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
VIK
VOH
Input clamp voltage
High-level output voltage
Tamb = –40°C
to +85°C
Tamb = +25°C
VCC = 4.5V; IIK = –18mA
TYP
MAX
–0.9
–1.2
MIN
UNIT
MAX
–1.2
V
VCC = 4.5V; IOH = –3mA; VI = VIL or VIH
2.5
2.9
2.5
V
VCC = 5.0V; IOH = –3mA; VI = VIL or VIH
3.0
3.4
3.0
V
VCC = 4.5V; IOH = –32mA; VI = VIL or VIH
2.0
2.4
2.0
V
VOL
Low-level output voltage
VCC = 4.5V; IOL = 64mA; VI = VIL or VIH
0.42
0.55
0.55
V
VRST
Power-up output
voltageNO TAG
VCC = 5.5V; IO = 1mA; VI = GND or VCC
0.13
0.55
0.55
V
Input leakage current
VCC = 5.5V; VI = GND or 5.5V
±0.01
±1.0
±1.0
µA
Power-off leakage current
VCC = 0.0V; VO or VI ≤ 4.5V
±5.0
±100
±100
µA
Power-up/down 3-State
output current4
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
V OE = Don’t care
±5.0
±50
±50
µA
IOZH
3-State output High current
VCC = 5.5V; VO = 2.7V; VI = VIL or VIH
5.0
50
50
µA
IOZL
3-State output Low current
VCC = 5.5V; VO = 0.5V; VI = VIL or VIH
–5.0
–50
–50
µA
ICEX
Output High leakage current
VCC = 5.5V; VO = 5.5V; VI = GND or VCC
5.0
50
50
µA
Output current1
VCC = 5.5V; VO = 2.5V
–70
–180
–180
mA
VCC = 5.5V; Outputs High, VI = GND or VCC
120
250
250
µA
VCC = 5.5V; Outputs Low, VI = GND or VCC
56
76
76
mA
VCC = 5.5V; Outputs 3-State;
VI = GND or VCC
120
250
250
µA
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND
0.5
1.5
1.5
mA
II
IOFF
IPU/PD
IO
ICCH
ICCL
Quiescent supply current
ICCZ
∆ICC
Additional supply current per
input pin2
–50
–50
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a
transition time of up to 100µsec is permitted.
AC CHARACTERISTICS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
PARAMETER
Tamb = -40 to
+85oC
VCC = +5.0V ±0.5V
Tamb = +25oC
VCC = +5.0V
WAVEFORM
UNIT
MIN
TYP
MAX
MIN
MAX
2
1.5
1.7
3.1
3.5
4.4
4.7
1.5
1.7
5.0
5.3
ns
Propagation delay
nLE to nQx
1
2.4
2.9
4.2
4.6
5.7
6.0
2.4
2.9
6.5
6.7
ns
tPZH
tPZL
Output enable time
to High and Low level
4
5
1.3
2.3
3.1
4.0
4.2
5.2
1.3
2.3
4.9
5.9
ns
tPHZ
tPLZ
Output disable time
from High and Low level
4
5
1.0
1.5
3.3
3.2
4.6
4.5
1.0
1.5
5.1
5.0
ns
tPLH
tPHL
Propagation delay
nDx to nQx
tPLH
tPHL
August 24, 1993
4
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
AC SETUP REQUIREMENTS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
LIMITS
SYMBOL
PARAMETER
Tamb = -40 to
+85oC
VCC = +5.0V ±0.5V
Tamb = +25oC
VCC = +5.0V
WAVEFORM
Min
Typ
Max
Min
UNIT
Max
ts(H)
ts(L)
Setup time, High or Low
nDx to nLE
3
2.0
1.5
0.8
0.4
2.0
1.5
ns
th(H)
th(L)
Hold time, High or Low
nDx to nLE
3
0.5
0.5
–0.3
–0.7
0.5
0.5
ns
tw(H)
nLE pulse width High
1
2.9
1.9
2.9
ns
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
nDx INPUT
nLE
VM
VM
VM
VM
VM
tPLH
tw(H)
tPHL
tPHL
tPLH
nQx
VM
VM
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
Waveform 1. Propagation Delay, Latch Enable Input to
Output, and Enable Pulse Width
nDx
VM
ts(H)
VM
VM
nQx OUTPUT
Waveform 2. Propagation Delay for Data to Outputs
VM
VM
th(H)
VM
ts(L)
th(L)
nLE
VM
VM
Waveform 3. Data Setup and Hold Times
nOE
VM
tPZH
nQx
nOE
VM
tPHZ
VM
VM
VM
tPZL
VOH –0.3V
nQx
tPLZ
VM
VOL +0.3V
0V
Waveform 4. 3–State Output Enable Time to High Level
and Output Disable Time from High Level
Waveform 5. 3–State Output Enable Time to Low Level
and Output Disable Time from Low Level
NOTE: The shaded areas indicate when the input is permitted to change for predictable output performance.
August 24, 1993
5
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
TEST CIRCUIT AND WAVEFORM
VCC
7.0V
VOUT
VIN
PULSE
GENERATOR
tW
90%
VM
NEGATIVE
PULSE
RL
10%
0V
tTHL (tF)
CL
tTLH (tR)
tTLH (tR)
RL
tTHL (tF)
90%
POSITIVE
PULSE
Test Circuit for 3-State Outputs
AMP (V)
90%
VM
VM
10%
10%
tW
SWITCH POSITION
TEST
SWITCH
tPLZ
closed
tPZL
closed
All other
open
0V
VM = 1.5V
Input Pulse Definition
INPUT PULSE REQUIREMENTS
DEFINITIONS
FAMILY
RL = Load resistor; see AC CHARACTERISTICS for value.
CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
MB
RT = Termination resistance should be equal to ZOUT of
pulse generators.
August 24, 1993
AMP (V)
VM
10%
D.U.T
RT
90%
6
Amplitude
Rep. Rate
tW
tR
tF
3.0V
1MHz
500ns
2.5ns
2.5ns
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
tPLH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nDx to nQx
6
Adjustment of tPLH for
Load Capacitance and # of Outputs Switching
nDx to nQx
5
4
5
MAX
20 switching
3
10 switching
2
1 switching
Offset in ns
ns
4
4.5VCC
5.5VCC
3
2
1
MIN
0
1
–1
0
–2
–55
–35
–15
5
25
45
65
85
105
0
125
50
°C
150
200
pF
tPHL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nDx to nQx
7
100
Adjustment of tPHL for
Load Capacitance and # of Outputs Switching
nDx to nQx
5
6
4
5
Offset in ns
MAX
4
2
MIN
ns
3
4.5VCC
5.5VCC
3
20 switching
10 switching
2
1 switching
1
0
1
–1
0
–2
–55
–35
–15
5
25
45
65
85
105
125
0
50
°C
200
Adjustment of tPLH for
Load Capacitance and # of Outputs Switching
nLE to nQx
5
7
4
Offset in ns
MAX
6
5
3
MIN
ns
4
4.5VCC
5.5VCC
3
20 switching
10 switching
2
1 switching
1
0
2
–1
1
–55
150
pF
tPLH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nLE to nQx
8
100
–2
–35
–15
5
25
45
65
85
105
125
0
°C
August 24, 1993
50
100
pF
7
150
200
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
tPHL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nLE to nQx
8
Adjustment of tPHL for
Load Capacitance and # of Outputs Switching
nLE to nQx
5
4
7
MAX
3
20 switching
10 switching
2
1 switching
5
Offset in ns
ns
6
4.5VCC
5.5VCC
4
1
0
MIN
3
–1
2
–2
–55
–35
–15
5
25
45
65
85
105
0
125
50
°C
150
200
pF
tPZH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOE to nQx
6
100
Adjustment of tPZH for
Load Capacitance and # of Outputs Switching
nOE to nQx
5
4
5
MAX
20 switching
3
4
Offset in ns
10 switching
ns
4.5VCC
3
5.5VCC
2
2
1 switching
1
0
MIN
1
–1
0
–2
–55
–35
–15
5
25
45
65
85
105
0
125
50
°C
150
200
pF
tPZL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOE to nQx
7
100
5
Adjustment of tPZL for
Load Capacitance and # of Outputs Switching
nOE to nQx
4
6
20 switching
10 switching
MAX
3
Offset in ns
ns
5
4.5VCC
4
5.5VCC
3
1 switching
2
1
0
MIN
2
–1
1
–55
–2
–35
–15
5
25
45
65
85
105
0
125
°C
August 24, 1993
50
100
pF
8
150
200
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
tPHZ vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOE to nQx
6
Adjustment of tPHZ for
Load Capacitance and # of Outputs Switching
nOE to nQx
8
20 switching
10 switching
1 switching
7
MAX
5
6
5
Offset in ns
4
ns
4.5VCC
3
5.5VCC
2
4
3
2
1
0
MIN
1
–1
–2
0
–55
–3
–35
–15
5
25
45
65
85
105
125
0
50
°C
6
5
MAX
2
Offset in ns
ns
4.5VCC
5.5VCC
3
20 switching
10 switching
1 switching
4
4
MIN
3
2
1
0
1
–1
0
–2
–35
–15
5
25
45
65
85
105
125
0
50
°C
100
150
200
pF
tTLH vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
4
Adjustment of tTLH for
Load Capacitance and # of Outputs Switching
9
7
20 switching
10 switching
1 switching
3
Offset in ns
5
ns
200
Adjustment of tPLZ for
Load Capacitance and # of Outputs Switching
nOE to nQx
5
–55
150
pF
tPLZ vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
nOE to nQx
6
100
4.5VCC
2
5.5VCC
3
1
1
–1
0
–55
–3
–35
–15
5
25
45
65
85
105
0
125
°C
August 24, 1993
50
100
pF
9
150
200
Philips Semiconductors Advanced BiCMOS Products
Product specification
Dual 10-bit bus interface latch (3-State)
MB2841
tTHL vs Temperature (Tamb)
CL = 50pF, 1 Output Switching
4
Adjustment of tTHL for
Load Capacitance and # of Outputs Switching
5
4
20 switching
3
Offset in ns
ns
3
4.5VCC
2
5.5VCC
10 switching
1 switching
2
1
0
1
–1
0
–2
–55
–35
–15
5
25
45
65
85
105
0
125
50
°C
200
VOHP and VOLV vs Load Capacitance
VCC = 5V, VIN = 0 to 3V
6
3.5
5
125°C
25°C
–55°C
3.0
4
125°C
25°C
–55°C
3
Volts
2.5
Volts
150
pF
VOHV and VOLP vs Load Capacitance
VCC = 5V, VIN = 0 to 3V
4.0
100
2.0
1.5
2
1
0
125°C
25°C
–55°C
1.0
0.5
125°C
25°C
–55°C
–1
–2
0
–3
0
50
100
150
0
200
pF
August 24, 1993
50
100
pF
10
150
200