PHILIPS LFE15600X

DISCRETE SEMICONDUCTORS
DATA SHEET
LFE15600X
NPN microwave power transistor
Product specification
Supersedes data of January 1994
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
LFE15600X
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
Class AB (CW)
1.5
24
0.2
≥55
≥8
ηC
(%)
Zi/ZL
(Ω)
typ.50 see Figs 7
and 8
PINNING - SOT448A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATIONS
Common emitter, class AB amplifiers
in CW conditions for professional
applications between 1.5 GHz and
1.7 GHz.
1
book, 4 columns
c
b
3
3
e
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with emitter
connected to flange.
2
MAM045
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCER
collector-emitter voltage
RBE = 56 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
22
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
DC collector current
−
12
A
Pi
input power
f = 1.5 GHz; VCE = 24 V; class AB
−
20
W
Ptot
total power dissipation
Tmb = 75 °C
−
80
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MBD390
120
P tot
(W)
80
40
0
0
100
T mb ( oC)
200
Fig.2 Power derating curve.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tj = 100 °C
1.2
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
−
6
mA
V(BR)CER
collector-emitter breakdown voltage
IC = 30 mA; RBE = 56 Ω
30
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 30 mA
45
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 30 mA
3
−
V
hFE
DC current gain
IC = 1 A; VCE = 5 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(A)
PL1
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(Ω)
Class AB (CW)
1.5
24
0.2
≥55
typ. 60
≥8
typ. 8.5
typ. 50
see Figs 7
and 8
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
30 mm
1.0
30 mm
17.5
2.0
4.0
6.5
7.0
3.0
9.0
1.0
40 mm
40 mm
0.635
4.0
4.0
10.0
0.635
MBD396
C5
V BB
VCC
C6
C7
F1
L1
input
output
L2
C4
C1
C2
C3
rivet
MBD397
The test circuit is split into 2 independent halves, each being 30 × 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Prematching test circuit board.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
PREMATCHING TEST
CIRCUIT
BIAS CIRCUIT
R1
C6
TR1
C5
V CE
C7
R2
F1
P1
D1
R3
L2
C8
L1
DUT
D2
MBD393
Fig.4 Class AB bias circuit.
List of components (see Figs 3 and 4)
COMPONENT
DESCRIPTION
VALUE
TYPE NUMBERS
TR1
transistor
C1, C4
DC blocking chip capacitor
100 pF
BDT91 or equivalent
ATC 100A101kp
C2, C3
trimmer capacitor
0.5 to 5.0 pF
Tekelec 727-1
C5, C6
feedthrough bypass capacitor
1500 pF
Erie, ref. 1250-003
C7, C8
tantalum capacitor
10 µF, 50 V
D1
diode BY239 or equivalent; note 1
D2
diode BY239 or equivalent; note 2
L1
4 turns 0.5 mm copper wire; internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire; internal diameter = 2 mm
P1
linear potentiometer
4.7 kΩ
R1
resistor
100 Ω, 0.25 W
R2
resistor
10 kΩ, 0.25 W
R3
resistor
50 Ω, 0.25 W
F1
ferrite bead
Philips tube
3.7 × 1.2 × 3.5 mm (3B)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
MBD394
80
MBD395
20
d im
PL
(W)
(dB)
25
60
I CQ =
400 mA
200 mA
100 mA
40
I CQ =
400 mA
200 mA
100 mA
30
35
40
20
45
50
0
0
4
8
12
P i (W)
0
16
10
20
30
40
P o (av) (W)
50
VCE = 24 V; f1 = 1500 MHz; f 2 = 1500.2 MHz.
VCE = 24 V; f = 1500 MHz.
Fig.6
Fig.5 Load power as a function of input power.
Intermodulation distortion as a function of
average output power.
Input and optimum load impedances
VCE = 24 V; ICQ = 0.2 A.
1997 Feb 19
f
(GHz)
Zi
(Ω)
ZL
(Ω)
1.50
2.4 + j3.4
2.4 − j1.8
1.55
3.0 + j3.6
2.3 − j1.7
1.60
3.5 + j3.8
2.2 − j1.6
1.65
4.2 + j3.8
2.1 − j1.5
1.70
4.8 + j2.5
1.8 − j1.5
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
1
0.5
2
1.6
0.2
Zi
5
1.5
1.7 GHz
10
+j
0
0.2
0.5
1
2
5
10
∞
–j
10
5
0.2
2
0.5
MBD392
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A.
Fig.7 Input impedance as a function of frequency; typical values.
1
0.5
2
0.2
5
ZL
10
+j
0
–j
0.2
1.7 GHz
0.5
1
2
5
10
∞
1.6
10
1.5
5
0.2
2
0.5
1
MBD391
VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A.
Fig.8 Optimum load impedance as a function of frequency; typical values.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
NOTES
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
NOTES
1997 Feb 19
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01596