PHILIPS SA1921

INTEGRATED CIRCUITS
SA1921
Satellite and cellular dual-band RF
front-end
Product specification
Supersedes data of 1998 Sep 11
IC17 Data Handbook
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
DESCRIPTION
SA1921
FEATURES
• Low current consumption
• Outstanding low- and high-band noise figure
• Excellent gain stability versus temperature and supply
• Image reject high-band mixer with over 30 dB of rejection
• Increased low-band LNA gain compression during analog
The SA1921 is an integrated dual-band RF front-end that operates
at both cellular (AMPS, DAMPS, and GSM) and satellite
(1515–1600 MHz) frequencies, and is designed in a 13 GHz fT
BiCMOS process—QUBiC1. The low-band is a combined low-noise
amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 943
MHz with 18.3 dB of gain and an IIP3 of –5 dBm. The wide-dynamic
range mixer has a 11 dB noise figure at 943 MHz with 7.2 dB of gain
and an IIP3 of +5 dBm.
transmission
• LO input and output buffers
• On chip logic for network selection and power down
• Very small outline package
The high-band contains a receiver front-end, and a high frequency
transmit mixer intended for closed loop transmitters. One advantage
of the high-band architecture is an image-rejection mixer with over
30 dB of image rejection; thus, eliminating external filter cost while
saving board space. The system noise figure is 3.9 dB at 1550 MHz
with a power gain of 22.2 dB and an IIP3 of –11.5 dB.
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1515 to 1600 MHz digital receivers
• Portable radios
• Digital mobile communications equipment
Tx IF B
Tx IF A
N/C
7
GND
8
GND
9
MIX IN
10
V CC
11
Tx A
Tx B
12
GND
N/C
GND
PIN CONFIGURATION
6
5
4
3
2
1
HI/LO
13
48
N/C
SYN ON
14
47
GND
HIGH BAND IF A
15
46
GND
HIGH BAND IF B
16
45
LOW BAND LNA OUT
LOW BAND IF A
17
44
GND
LOW BAND IF B
18
43
LOW BAND LNA IN
STRONG SIGNAL
24
37
N/C
25
26
27
28
29
30
31
32
33
34
35
36
N/C
38
Rx ON
GND
GND
23
GND
39
LOW BAND LO A
HIGH BAND IMAGE SET Q
22
GND
LOW BAND LO A
LOW BAND LO INPUT
40
HIGH BAND LO INPUT
GND
21
GND
41
HIGH BAND LO B
HIGH BAND IMAGE SET I
HIGH BAND LNA IN
V CC
42
20
Tx ON
19
VCC
GND
HIGH BAND LO A
V CC
SR01732
Figure 1.
Pin Configuration
ORDERING INFORMATION
TYPE NUMBER
SA1921
1999 Mar 02
NAME
LQFP48
PACKAGE
DESCRIPTION
Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm
2
VERSION
SOT313-2
853–2121 20917
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PIN DESCRIPTIONS
PIN
NO.
PIN NAME
DESCRIPTION
1
N/C
2
Tx IF A
Transmit IF A
3
Tx IF B
Transmit IF B
4
GND
5
MIX IN
6
GND
Ground
7
VCC
VCC
8
GND
Ground
9
Tx A
Transmit Signal A
10
Tx B
Transmit Signal B
11
GND
Ground
12
N/C
No Connection
13
HI/LO
14
SYN ON
15
HIGH BAND IF A
High Band IF A
16
HIGH BAND IF B
High Band IF B
17
LOW BAND IF A
Low Band IF A
18
LOW BAND IF B
Low Band IF B
19
GND
20
HIGH BAND LO A
High Band LO Output
21
HIGH BAND LO B
High Band LO Output
22
LOW BAND LO A
Low Band LO Output
23
LOW BAND LO B
Low Band LO Output
24
Rx ON
25
VCC
26
Tx ON
27
VCC
28
HIGH BAND IMAGE SET I
29
GND
30
HIGH BAND LO INPUT
High Band LO Connection
31
LOW BAND LO INPUT
Low Band LO Connection
32
GND
33
HIGH BAND IMAGE SET Q
34
GND
Ground
35
GND
Ground
36
N/C
No Connection
37
N/C
No Connection
38
STRONG SIGNAL
39
GND
Ground
40
VCC
VCC
41
GND
Ground
42
HIGH BAND LNA IN
High Band LNA Input
43
LOW BAND LNA IN
Low Band LNA Input
44
GND
45
LOW BAND LNA OUT
46
GND
Ground
47
GND
Ground
48
N/C
No Connection
1999 Mar 02
No Connection
Ground
Low Band Mixer Input
High Band/Low Band Control
LO Buffer Power Control
Ground
LNA/Mixer Power Control
VCC
Tx Mixer/Driver Power
VCC
High Band Image Set I
Ground
Ground
High Band Image Set Q
Strong Signal Detection
Ground
Low Band LNA Output
3
Philips Semiconductors
Product specification
N/C
Tx IF A
Tx IF B
GND
SA1921
MIX IN
GND
V CC
GND
Tx A
Tx B
GND
N/C
Satellite and cellular dual-band RF front-end
HI/LO
N/C
SYN ON
GND
HIGH BAND IF A
GND
HIGH BAND IF B
LNA OUT
LOW BAND IF A
GND
5 pF
LOW BAND IF B
LOW BAND LNA IN
IMAGE
REJECT
MIXER
5 pF
GND
HIGH BAND LNA IN
GND
HIGH BAND LO A
HIGH BAND LO B
V CC
LOW BAND LO A
GND
LOW BAND LO B
STRONG SIGNAL
N/C
N/C
GND
GND
HIGH BAND IMAGE SET Q
GND
LOW BAND LO INPUT
HIGH BAND LO INPUT
GND
HIGH BAND IMAGE SET I
V
CC
Tx ON
VCC
Rx ON
SR01733
Figure 2.
1999 Mar 02
Block Diagram
4
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 1. POWER DOWN CONTROL
LO BUFFER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal)
High
Band
LNA
MIXER
TX MIXER
DRIVER
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
x000x
Sleep
Off
Off
Off
Off
Off
Off
Off
Off
01000
Low-Band LO Buffer on
Off
On
Off
Off
Off
Off
Off
Off
01100
Low-Band Receive Normal
Off
On
Off
On
Off
On
Off
Off
01101
Low-Band receive Strong Signal
Off
On
Off
Off
Off
On
Off
Off
01110
Low-Band Transmit (Analog only)
Off
On
Off
On
Off
On
Off
On
Off
Off
Off
On
High Bias
01010
N/A
Off
On
Off
Off
11000
High-Band LO Buffer On
On
11100
High-Band Receive Normal
On
Off
Off
Off
Off
Off
Off
Off
Off
On
Off
On
Off
Off
Off
11101
High-Band Receive Strong Signal
11010
N/A
On
Off
Off
Off
On
Off
Off
Off
On
Off
Off
Off
Off
Off
On
Off
NOTE:
1. “0” is low logic state; “1” is high logic state.
1999 Mar 02
5
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
OPERATION
The low-band contains both an LNA and mixer that is designed to
operate in the 800 to 1000 MHz frequency range. The high-band
contains an LNA and image-rejection mixer that is designed to
operate in the 1515 to 1600 MHz frequency range with over 30 dB of
rejection over an intermediate frequency (IF) range from 150 to
185 MHz.
Control Logic Section
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, control the logic
functions. The HI/LO mode selects between low-band and
high-band operation. The SYN ON mode enables the LO buffers
independent of the other circuitry. When SYN ON is high, all internal
buffers in the LO path of the circuit are turned on, thus minimizing
LO pulling when the remainder of the receive or transmit chain is
powered-up.
Image rejection is achieved in the internal architecture by two RF
mixers in quadrature and two all-pass filters in the I and Q IF
channels that phase shift the IF by 45 and 135, respectively. The
two phase shifted IFs are recombined and buffered to produce the
IF output signal.
The Rx ON mode enables the LO buffers when the device is in the
low-band receive normal, receive strong signal and transmit modes;
the Rx ON mode enables the LO buffers, also, when the device is in
the high-band receive normal, and receive strong signal modes.
The LO section consists of an internal phase shifter to provide
quadrature LO signals to the receive mixers. The filters outputs are
buffered before being fed to the receive mixers. The transmit mixer
section consists of a low-noise amplifier, and a down-convert mixer.
In the transmit mode, an internal LO buffer is used to drive the
transmit IF down-convert mixer.
The Tx ON mode enables the transmit mixer. The strong signal
mode, when disabled, allows the low- and high-band LNAs to
function normally; and when the strong signal mode is enabled, it
turns-off the low- and high-band LNAs. This is needed when the
input signal is large and needs to be attenuated.
Low-Band Receive Section
Local Oscillator (LO) Section
The circuit contains a LNA followed by a wide-band mixer. In a
typical application circuit, the LNA output uses an external pull-up
inductor to VCC and is AC coupled. The mixer IF outputs are
differential. A typical application will load the output buffer with an
inductor across the IF outputs, a pull-up inductor to VCC and an AC
coupled capacitor to the matching network.
The LO input directly drives the two internal all-pass networks to
provide quadrature LO to the receive mixers. A synthesizer-on (SYN
ON) mode is used to power-up all LO input buffers, thus minimizing
the pulling effect on the external VCO when entering receive or
transmit mode.
Transmit Mixer Section
Low-Band Receive Section (Analog Transmit
Mode)
The transmit mixer is used for down-conversion to the transmit IF. Its
inputs are coupled to the transmit RF which is down-converted to a
modulated transmit IF frequency, and phase-locked with the
baseband modulation.
The bias current of the low-band LNA will increase during analog
transmission, which increases its gain compression point and makes
the receiver less sensitive to PA leakage power for an AMPS
application.
The IF outputs are HIGH impedance (open-collector type). A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to VCC and AC coupled capacitors to the
matching network.
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range
mixers. These are Gilbert cell mixers; the internal architecture is fully
differential. The LO is shifted in phase by 45 and 135 and mixes
the amplified RF signal to create I and Q channels. The two I and Q
channels are buffered, phase shifted by 45 and 135, respectively,
amplified and recombined internally to realize the image rejection.
The IF output is differential and of the open-collector type. A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to VCC and an AC coupled capacitor to
the matching network.
1999 Mar 02
6
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETERS
VALUE
UNIT
VCC
Input supply voltage at pins: 7, 25, 27, 40
4.75
V
PD
Power dissipation
150
mW
PIN
Input power at all ports
+20
dBm
Tsrg
Storage temperature range
–65 to +125
°C
RATING
UNIT
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
TO
PARAMETERS
DC Supply voltage
3.6 to 3.9
V
Operating temperature range (pin temp)
–40 to +85
°C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.75 V, TA = +25°C unless otherwise noted
SYMBOL
PARAMETERS
CONDITION
MIN.
TYP.
MAX.
UNIT
1.0
25
A
9.8
12.2
14.7
mA
ICC
Current Consumption: Sleep Mode
X000X
ICC
Low Band Receive Normal
01100
ICC
Low Band Receive Strong
01101
9.0
mA
ICC
Low Band Transmit (Analog)
01111
18.0
mA
ICC
Low Band Transmit (GSM)
01010
16.5
mA
ICC
High Band Receive Normal
11100
ICC
High Band Receive Strong
11101
ICC
High Band Transmit (GSM)
11010
1999 Mar 02
32.0
40.0
48.0
36.0
mA
mA
19.4
mA
Logic Low Input
0
0.5
V
Logic High Input
1.9
4.0
V
7
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
VCC = +3.75 V, FreqRF = 943 MHz, FreqLO = 1106 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
Min
TYP
PARAMETERS
–3
+3
Max
UNITS
960
MHz
NOTES
System
RF Input Frequency Range
869
943
IF Frequency
163
LO Frequency
1032
Cascaded Power Gain; includes 3dB filter loss
Power Gain Reduction (Strong Signal Mode—LNA Off)
MHz
1106
1123
MHz
21.4
22.5
23.6
dB
30
36
42
dB
Cascaded Noise Figure; includes 3dB filter loss
2.6
dB
LNA
LNA Gain
17.6
18.3
19
dB
LNA IIP3 (60 kHz spacing)
–6.0
–5.0
–4.0
dBm
LNA IIP3 (200 kHz spacing)
–3.0
LNA Noise Figure
1.6
LNA 1 dB RF Input Compression Point
1.7
dBm
1.8
dB
–21.0
dBm
Mixer
Mixer Gain
6.9
7.2
7.5
dB
Mixer IIP3 (60 kHz spacing)
4.0
5.0
6.0
dBm
Mixer Noise Figure
10.4
11.0
11.6
dB
Mixer 1 dB RF Input Compression Point
–13.0
dBm
50
W
Other
Input Impedance, RF Port
Return Loss at LNA Inputs and Output
–10
dB
1
Return Loss at Mixer Input and Outputs
–10
dB
1
LO leakage at RF Port
–42
LO Input Power
–5
Turn ON/OFF Time
–3
dBm
–1
dBm
msec
100
Low-Band LO Buffer
VCC = +3.75 V, FreqLO = 1106 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
Min
PARAMETERS
–3
LO Frequency
1032
TYP.
+3
1106
Max
UNITS
1123
MHz
Differential Output Power
–7
Differential Output Impedance
100
W
Harmonic Content
–20
dBc
Input Power
–5
–3
dBm
–1
dBm
Input Impedance
50
W
Turn On/Off Time
10
msec
NOTE:
1. External matching network is required.
1999 Mar 02
8
NOTES
1
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
PARAMETERS
MIN
RF Input Frequency Range
–3
TYP.
+3
1515
IF Frequency
150
LO Frequency
1665
Power Gain
163
MAX
UNITS
1600
MHz
185
MHz
1785
MHz
21.5
22.2
22.9
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
34
47
60
dB
Noise Figure
3.7
3.9
4.1
dB
Input Impedance, RF Port
W
50
Return Loss at Inputs
–10
dB
LO leakage at RF Port
–48
dBm
1 dB RF Input Compression Point
–24
dBm
(3RD
IP3
Order Intermodulation Product)
Referred to the RF Input Port
–14
–11.5
–9
–62
dBc
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 1688 MHz and RF = 1634 MHz.
–102
dBc
LO Input Power
31.5
34
36.5
dB
–5
–3
–1
dBm
Turn ON/OFF Time
1
dBm
(2 x LO) – (2 x RF) Spur Performance
–50
50 dBm IN Referred to RF Input
In ut Port
Measure at LO = 1688 MHz and RF = 1606 MHz
Image rejection, fRX+2fIF
Referred to the RF Input Port
NOTES
msec
10
High-Band LO Buffer
VCC = +3.75 V, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
PARAMETERS
MIN
LO Frequency Range
–3
TYP.
+3
1665
MAX
UNITS
1785
MHz
Differential Output Power
–9
dBm
Differential Output Impedance
100
W
Harmonic Content
–20
Input Power
–5
–3
dBc
–1
dBm
Input Impedance
50
W
Turn On/Off Time
10
msec
NOTE:
1. External matching network is required.
1999 Mar 02
9
NOTES
1
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Transmit Mixer
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
PARAMETERS
MIN
TX Mixer Input Frequency
–3
TYP.
+3
824
TX RF Input Impedance, Balanced
MAX
UNITS
1661
MHz
200
MHz
W
200
TX Mixer Output Frequency
70
163
TX IF Load Impedance
W
1000
Maximum TX IF Load Capacitance
2
Conversion Power Gain
17
1 dB Input Compression Point
18
19
–17
IIP2
–9
Noise Figure (double sideband)
–7
8.5
pF
dB
dBm
20
IIP3
dBm
–5
dBm
dB
Reverse Isolation TXIN–LOIN
40
dB
Isolation LOIN–TXIN
40
dB
NOTES:
1. Input and output ports matched to 50 W.
1999 Mar 02
10
NOTES
1
1999 Mar 02
Figure 3.
11
SA1921 Dual-Band Test Circuit
J16–2
J21–3
DP26
AP12
AP38
AP40
AP41
AP44
AP46
DP34
DP33
AP42
AP10
1K
1
P4
R26
R25
3.92K
P5
R1
AT10
AT2
6
3
3
R10
1
R18
1
R3
3.92K
3.92K
R5
3.92K
R6
3.92K
R7
R8
LRPS–2–11
A
A
C35
33 pf
C20
33 pf
3 AT4 1
PAT–10
B
A
C36
33 pf
1
R23
C11
1000 pf
L11
150 nh
B
A
C4
1000 pf
L10
180 nH
33 pf
3 AT3 1
PAT–10
B
R11
4.32K
5.6 pf
C6
B
R9
1.21K
5.6 pf
C5
C2
1.5 pf
C19
C10
1000 pf
C1
1000 pf
R2
562
L2
150 nH
1 uH B
L3
3.92K
A
U2
4
PORT 1
SUM PORT
PORT 2 3
DPS1
PAT–10
1
DPS1
AT1
PAT–10
1
B
B
A
L1
180 nh
10 pf
R17
51.1
3.92K
R4
3
C31
0.1 uf
C23
10 pf
C24
A
C9
SELECT
1
PAT–10
1
3.92K
3.92K
P3
P2
1
R32
DPS1
AT9
PAT–10
3
AP9 R13
P1
AP45
1
C34
33 pf
SELECT
C28
L7
150 nH
C7
8.2 pf
R24
1
C27
5.6 pf
C3
5.6 pf
L6
150 nH
C18
33 pf
C15
100 pf
DUT–24
DUT–23
DUT–22
DUT–21
DUT–20
DUT–19
DUT–18
DUT–17
DUT–16
DUT–15
DUT–14
DUT–13
DUT–10
RXON
LBLOB
LBLOA
HBLOB
HBLOA
GND
LBIFB
LBIFA
HBIFB
HBIFA
SYNON
HILO
TXB
TXA
N/C
DUT–9
GND
DUT–12
GND
DUT–8
DUT–11
VCC
LBMIN
GND
GND
TXIFB
TXIFA
N/C
DUT–7
DUT–5
DUT–6
DUT–4
DUT–3
DUT–2
DUT–1
IMAGE
REJECT
MIXER
2X
SA1921
VCC
TXON
VCC
HBBPS
GND
HBTNK
LBTNK
GND
LBBPS
GND
X2ON
N/C
N/C
STRONG
GND
VCC
HBLIN
LBLIN
GND
DUT–25
DUT–26
DUT–27
DUT–28
DUT–29
DUT–30
DUT–31
DUT–32
DUT–33
DUT–34
DUT–35
DUT–36
DUT–37
DUT–38
DUT–39
DUT–40
DUT–42
DUT–43
DUT–41
DUT–44
DUT–47
GND
DUT–46
GND
DUT–45
DUT–48
RxMxGND
LBLOUT
N/C
C16
100 pf
10 pf
C25
10 pf
R12
1
R20
51.1
R21
51.1
1
R16
33 pf
C21
33 pf
C22
C12
1000 pf
C14
1000 pf
C26
C13
1000 pf
C17
100 pf
C29
2.2 pf
C30
1.5 pf
C8
10 pf
R28
L5
L8
8.2 nH
L9
8.2 nH
L4
3.92K
R14
1 AT6 3
PAT–3
1 AT5 3
PAT–6
3.92K
R15
B 1 uH A
B
A
B
A
B 1 uH A
3.92K
R30
3.92K
R31
3.92K
R29
332
R27
4.7 nH
L12
3.92K
DPS1
PAT–6
1 AT8 3
PAT–6
1 AT7 3
C32
0.1 uf
LRPS–2–11
1
C38
1000 pf
J1–3
U1
3
PORT 2
6
SUM PORT
4 PORT 1
C33
0.1 uf
R19
51.1
R22
51.1
C37
100 pf
AP43
J28–3
J29–2
J23–4
J100–5
J100–4
J100–2
J100–3
J21–2
J22–5
P7
J24–4
J26–2
J25–2
DO NOT ASSEMBLE
DP19
DPS1HS
DPS1HF
DPS1LF
DPS1LS
AP11
AP39
AP36
AP14
DP23
DP31
J28–2
J26–3
P6
AP16
P8
AP16
AP47
DPS1
Satellite and cellular dual-band RF front-end
J20–3
J15–3
J11–5
J12–4
J11–2
J13–3
J13–2
J6–5
J2–5
J2–4
J1–4
Philips Semiconductors
Product specification
SA1921
SR01802
Philips Semiconductors
Product specification
SA1921
5 pF
5 pF
Satellite and cellular dual-band RF front-end
SR01755
Figure 4.
SA1921 Dual-Band Application Circuit
NOTE:
GSM and Satellite frequencies
1999 Mar 02
12
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PERFORMANCE CHARACTERISTICS
VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25C; unless otherwise stated.
50.00
16.00
15.00
+85C
45.00
14.00
+85C
+25C
I CC (mA)
I CC (mA)
13.00
+25C
12.00
–40C
11.00
40.00
–40C
35.00
10.00
30.00
9.00
25.00
8.00
3.60
3.65
3.70
3.75
3.80
3.85
3.90
VCC (V)
Figure 5.
3.60
3.65
3.70
3.75
3.80
3.85
VCC (V)
SR01734
Low Band Receive Normal ICC
Figure 6.
30
3.90
SR01735
High Band Receive Normal ICC
45
28
26
40
REJECTION (dB)
GAIN (dB)
24
22
20
18
16
35
30
14
25
12
20
10
150
155
160
165
170
IF FREQUENCY (MHz)
175
180
150
185
155
160
SR01750
High Band Gain vs. IF Frequency
Figure 8.
–8.5
18
–9
17
–9.5
16
–10
15
–10.5
14
IP2 (dBm)
IP3 (dBm)
Figure 7.
–11
–11.5
11
10
–13
9
160
165
170
175
180
175
180
8
150
185
SR01751
High Band Image Rejection vs. IF Frequency
155
160
165
170
175
180
SR01752
1999 Mar 02
185
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
Figure 9.
185
12
–12.5
155
170
13
–12
–13.5
150
165
IF FREQUENCY (MHz)
SR01753
High Band IP3 vs. IF Frequency
Figure 10.
13
High Band IP2 vs. IF Frequency
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
22
6
21
20
–40C
4
19
GAIN (dB)
NOISE FIGURE (dBm)
5
3
+25C
18
+85C
17
2
16
15
1
14
0
150
155
160
165
170
175
180
IF FREQUENCY (MHz)
Figure 11.
860
185
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
SR01754
SR01736
High Band NF vs. IF Frequency
Figure 12.
LB LNA Gain vs. Frequency
–2
3
–3
+85C
–4
2.5
+25C
–6
IP3 (dBm)
NOISE FIGURE (dB)
–5
–7
–8
–40C
–9
–10
+85C
2
+25C
1.5
–40C
1
0.5
–11
–12
860
0
870
880
890
900
910
920
930
940
950
960
860
870
880
890
FREQUENCY (MHz)
900
910
920
930
940
SR01737
Figure 13.
960
SR01738
LB LNA IP3 vs. Frequency
Figure 14.
12
LB LNA Noise Figure vs. Frequency
8
–40C
7
10
+25C
–40C
6
8
+85C
IP3 (dBm)
GAIN (dB)
950
FREQUENCY (MHz)
6
4
5
+25C
4
+85C
3
2
1
2
0
0
860
870
880
890
900
910
920
930
940
FREQUENCY (MHz)
Figure 15.
1999 Mar 02
950
860
960
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
SR01740
SR01741
LB Mixer Gain vs. Frequency
Figure 16.
14
LB Mixer IP3 vs. Frequency
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
16.00
28
15.00
26
14.00
13.00
24
+85C
12.00
11.00
GAIN (dB)
NOISE FIGURE (dB)
SA1921
+25C
10.00
–40C
9.00
–40C
22
+25C
+85C
20
18
8.00
16
7.00
6.00
14
860
870
880
890
900
910
920
930
940
950
960
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01742
Figure 17.
LB Mixer Noise Figure vs. Frequency
Figure 18.
SR01744
HB Gain vs. Frequency
6
–8
–9
5
–10
–12
NOISE FIGURE (dB)
–11
IP3 (dBm)
+85C
+85C
+25C
–13
–40C
–14
–15
–16
4
+25C
3
–40C
2
1
–17
–18
0
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 19.
SR01745
SR01746
HB IP3 vs. Frequency
Figure 20.
45
20
18
+25C
40
+85C
16
+25C
35
30
IP2 (dBm)
IMAGE REJECTION (dB)
HB Noise Figure vs. Frequency
–40C
+85C
14
–40C
12
10
25
8
20
6
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01747
Figure 21.
1999 Mar 02
HB Image Rejection vs. Frequency
Figure 22.
15
HB IP2 vs. Frequency
SR01748
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
–15
–10.00
–17
–11.00
–12.00
+85C
–21
1 dB COMP (dBm)
1 dB COMP (dBm)
–19
+25C
–23
–40C
–25
–27
–29
–31
870
Figure 23.
880
890
900 910 920 930
FREQUENCY (MHz)
940
950
–14.00
–40C
–15.00
–16.00
–17.00
–18.00
860
960
LB LNA 1 dB Compression vs. Frequency
Figure 24.
–22
+85C
–26
–28
+25C
–40C
–30
–32
–34
–36
–38
–40
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
SR01749
Figure 25.
870
880
890
900
910
920
FREQUENCY (MHz)
SR01739
–20
1999 Mar 02
+25C
–20.00
–35
860
–24
+85C
–13.00
–19.00
–33
1 dB COMP (dBm)
SA1921
HB 1 dB Compression vs. Frequency
16
930
940
950
960
SR01743
LB Mixer 1 dB Compression vs. Frequency
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
S-PARAMETERS
1:
56.906Ω
–165.14Ω
200MHz
2:
32.531Ω
–80.145Ω
400MHz
3:
27.213Ω
–50.76Ω
600MHz
4:
22.594Ω
–28.63Ω
6.1759pF
900.125MHz
4
1
3
2
START: 100MHz
STOP: 1.35GHz
Figure 26.
SR01632
Typical S11 of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode
1:
9.2256U
170.16°
200MHz
2:
8.1698U
142.74°
400MHz
3:
6.7943U
124.27°
600MHz
4:
5.2793U
106.87°
900MHz
4
3
2
1
START: 100MHz
STOP: 1.35GHz
Figure 27.
1999 Mar 02
SR01643
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
17
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
2:
7.0159mU
75.611°
400MHz
3:
7.8297mU
90.185°
600MHz
4:
14.215mU
120.84°
900MHz
3
4
2
START: 100MHz
STOP: 1.35GHz
Figure 28.
SR01644
Typical S12 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1
1:
35.5Ω
294.66Ω
200MHz
2:
351.72Ω
–537.09Ω
400MHz
3:
77.625Ω
–220.38Ω
600MHz
4:
30.91Ω
–120.37Ω
1.4692pF
900MHz
2
4
START: 100MHz
STOP: 1.35GHz
Figure 29.
1999 Mar 02
3
SR01633
Typical S22 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
18
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
133.16Ω
–326.61Ω
200MHz
2:
74.875Ω
–193.17Ω
400MHz
3:
46.625Ω
–135.03Ω
600MHz
4:
25.117Ω
–83.656Ω
2.1107pF
901.375MHz
1
2
4
3
START: 100MHz
STOP: 1.35GHz
Figure 30.
SR01634
Typical S11 of Low Band LNA @ 3.75V for Receive Strong Signal Mode
1
2
4
START: 100MHz
STOP: 1.35GHz
Figure 31.
1999 Mar 02
1:
82.778mU
56.472°
200MHz
2:
101.74mU
30.696°
400MHz
3:
106.02mU
18.799°
600MHz
4:
97.527mU
992.89m°
901.375MHz
3
SR01645
Typical S21 of the Low Band LNA @ 3.75V for Receive Strong Signal Mode
19
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
82.482mU
48.834°
200MHz
2:
101.97mU
15.44°
400MHz
3:
105.45mU
–4.4673°
600MHz
4:
101.04mU
–32.816°
901.375MHz
1
2
4
3
START: 100MHz
STOP: 1.35GHz
Figure 32.
SR01646
Typical S12 for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode
1
1:
65.453Ω
303.47Ω
200MHz
2:
381.59Ω
–432.3Ω
400MHz
3:
74.375Ω
–206.25Ω
600MHz
4:
28.723Ω
–108.71Ω
1.6267pF
900MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
Figure 33.
1999 Mar 02
SR01635
Typical S22 for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode
20
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
102.26Ω
–217.14Ω
200MHz
2:
24.902Ω
–100.07Ω
400MHz
3:
20.596Ω
–48.596Ω
600MHz
4:
20.036Ω
–18.022Ω
9.8121pF
900MHz
4
1
3
2
START: 100MHz
STOP: 1.35GHz
Figure 34.
SR01636
Typical S11 for the Low Band Mixer @ 3.75V for the Receive Normal Mode
3
1:
15.326Ω
–41.15Ω
200MHz
2:
12.527Ω
–7.6484Ω
400MHz
3:
19.854Ω
11.1Ω
600MHz
4:
27.865Ω
–9.7334Ω
18.166pF
900.125MHz
4
2
1
START: 100MHz
STOP: 1.35GHz
Figure 35.
1999 Mar 02
SR01637
Typical S11 for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode
21
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
70.324Ω
–120.49Ω
200MHz
2:
45.121Ω
–61.621Ω
400MHz
3:
39.195Ω
–39.092Ω
600MHz
4:
33.025Ω
–24.061Ω
7.3497pF
900MHz
4
3
1
2
START: 100MHz
STOP: 1.35GHz
Figure 36.
SR01638
Typical S11 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
16.617U
161.94°
200MHz
2:
12.974U
134.43°
400MHz
3:
10.255U
118.75°
600MHz
4:
7.3947U
101.63°
900MHz
4
2
3
1
START: 100MHz
STOP: 1.35GHz
Figure 37.
1999 Mar 02
SR01647
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
22
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
4.6161mU
97.782°
200MHz
2:
6.5206mU
88.02°
400MHz
3:
9.1807mU
105.05°
600MHz
4:
15.58mU
119.06°
900MHz
4
3
2
1
START: 100MHz
STOP: 1.35GHz
Figure 38.
SR01648
Typical S12 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1
1:
67.703Ω
295.39Ω
200MHz
2:
436.03Ω
–336.16Ω
400MHz
3:
105.43Ω
–216.6Ω
600MHz
4:
37.477Ω
–123.19Ω
1.4355pF
900MHz
2
4
START: 100MHz
STOP: 1.35GHz
Figure 39.
1999 Mar 02
3
SR01639
Typical S22 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
23
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
13.76Ω
–15.057Ω
1.55GHz
2:
10.422Ω
–5.5498Ω
1.85GHz
3:
11.58Ω
–3.0508Ω
1.95GHz
4:
12.092Ω
–616.21mΩ
125.99pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 40.
SR01640
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Normal Mode
1:
12.135Ω
–53.891Ω
1.55GHz
2:
9.3379Ω
–38.457Ω
1.85GHz
3:
8.75Ω
–34.238Ω
1.95GHz
4:
8.7695Ω
–31.25Ω
2.4844pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 41.
1999 Mar 02
SR01641
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode
24
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1:
20.574Ω
–38.402Ω
1.55GHz
2:
18.104Ω
–22.765Ω
1.85GHz
3:
24.446Ω
–21.71Ω
1.95GHz
4:
20.975Ω
–20.711Ω
3.7486pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 42.
1999 Mar 02
SR01642
Typical S11 of the High Band LO @ 3.75V for the High Band Receive Normal Mode
25
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 2. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
0.89
–15.49
8.70
–165.43
0.0027
108.66
0.97
51.38
150
0.87
–22.76
8.71
–179.74
0.0038
93.41
0.96
31.54
200
0.85
–29.87
8.53
170.16
0.0049
92.10
0.96
19.54
250
0.82
–37.01
8.33
161.71
0.0065
86.08
0.95
11.08
300
0.79
–43.99
8.12
154.61
0.0071
82.95
0.94
4.19
350
0.75
–50.47
7.75
148.41
0.0078
69.24
0.93
–1.56
400
0.73
–56.72
7.49
144.24
0.0072
71.73
0.91
–5.69
450
0.70
–63.14
7.24
139.14
0.0078
76.99
0.91
–10.06
500
0.67
–69.13
6.97
134.34
0.0071
82.72
0.90
–13.94
550
0.63
–75.14
6.71
130.13
0.0078
84.15
0.89
–17.69
600
0.61
–81.15
6.45
126.62
0.0074
87.69
0.88
–21.14
650
0.59
–86.84
6.23
122.98
0.0079
91.07
0.88
–24.77
700
0.57
–92.30
6.03
119.16
0.0085
103.71
0.87
–28.09
750
0.55
–97.73
5.80
115.55
0.0098
103.73
0.87
–31.38
800
0.54
–102.99
5.56
111.56
0.0107
113.57
0.86
–34.82
850
0.53
–108.21
5.24
107.93
0.0121
115.45
0.86
–38.18
900
0.52
–113.27
4.97
105.40
0.0134
124.98
0.86
–41.51
950
0.51
–118.12
4.75
104.08
0.0155
127.67
0.86
–44.72
1000
0.51
–122.43
4.62
102.52
0.0175
128.87
0.86
–47.96
1050
0.51
–126.73
4.52
99.54
0.0193
128.89
0.86
–51.12
1100
0.50
–130.83
4.34
96.33
0.0217
129.85
0.86
–54.20
1150
0.51
–134.58
4.13
93.78
0.0238
128.74
0.86
–57.23
1200
0.51
–138.20
3.94
91.13
0.0269
131.20
0.86
–60.03
1250
0.51
–141.69
3.72
88.49
0.0297
130.22
0.87
–62.72
1300
0.51
–145.12
3.46
86.84
0.032
128.07
0.87
–65.57
1350
0.52
–148.25
3.25
86.69
0.033
127.73
0.87
–68.10
1999 Mar 02
26
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 3. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Strong Signal Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
150
0.94
–8.77
0.05
88.15
0.049
84.08
0.96
50.15
0.92
–12.15
0.07
68.32
0.069
63.51
0.95
30.01
200
0.90
–15.01
0.08
55.23
0.082
47.79
0.93
17.79
250
0.88
–17.75
0.09
46.14
0.090
37.04
0.92
9.22
300
0.87
–20.37
0.09
39.25
0.094
28.09
0.91
2.68
350
0.85
–23.15
0.10
33.96
0.099
21.40
0.90
–2.68
400
0.85
–25.85
0.10
29.86
0.100
14.70
0.89
–7.56
450
0.84
–28.73
0.10
26.35
0.102
9.32
0.88
–12.06
500
0.83
–31.65
0.10
23.06
0.103
4.37
0.88
–16.23
550
0.82
–34.56
0.10
20.07
0.103
–0.41
0.87
–20.35
600
0.81
–38.02
0.10
17.87
0.103
–5.17
0.86
–24.23
650
0.80
–41.41
0.10
15.28
0.104
–9.07
0.85
–28.29
700
0.80
–44.70
0.10
12.27
0.104
–13.29
0.85
–32.11
750
0.79
–48.40
0.10
9.05
0.103
–18.00
0.84
–35.85
800
0.78
–52.30
0.10
5.24
0.103
–23.07
0.83
–39.74
850
0.78
–56.58
0.10
2.20
0.102
–28.68
0.83
–43.59
900
0.77
–60.63
0.09
–0.26
0.099
–33.94
0.82
–47.19
950
0.77
–64.88
0.09
–2.21
0.094
–39.65
0.82
–50.95
1000
0.76
–69.05
0.09
–4.19
0.090
–44.01
0.81
–54.29
1050
0.76
–73.21
0.09
–7.58
0.086
–47.95
0.81
–57.67
1100
0.76
–77.26
0.09
–11.56
0.084
–52.34
0.81
–60.86
1150
0.76
–81.34
0.08
–16.05
0.080
–58.43
0.80
–64.05
1200
0.76
–85.37
0.08
–19.50
0.076
–62.90
0.80
–66.96
1250
0.76
–89.33
0.07
–23.71
0.074
–68.35
0.80
–69.89
1300
0.76
–93.28
0.07
–27.20
0.072
–75.17
0.79
–72.64
1350
0.75
–97.37
0.06
–31.20
0.068
–82.58
0.79
–75.21
1999 Mar 02
27
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 4. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Transmit On (Analog) Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
0.80
–18.49
16.98
–170.30
0.003
121.40
0.95
50.55
150
0.76
–27.25
17.07
173.61
0.004
100.49
0.94
30.44
200
0.72
–35.34
16.62
161.95
0.005
87.01
0.93
18.29
250
0.67
–43.14
15.82
152.47
0.005
88.74
0.92
9.80
300
0.62
–50.04
14.89
144.65
0.007
80.87
0.91
2.68
350
0.57
–55.41
13.73
138.33
0.007
64.95
0.89
–2.99
400
0.55
–61.58
12.97
134.43
0.007
90.16
0.87
–6.38
450
0.51
–67.13
12.27
129.49
0.007
90.97
0.86
–10.66
500
0.47
–72.08
11.53
125.20
0.008
89.19
0.85
–14.35
550
0.44
–76.94
10.83
121.58
0.009
96.23
0.84
–17.92
600
0.42
–81.92
10.24
118.69
0.009
98.83
0.84
–21.27
650
0.40
–86.62
9.78
115.74
0.009
102.03
0.83
–24.85
700
0.38
–91.05
9.32
112.66
0.010
107.95
0.83
–28.04
750
0.37
–95.76
8.89
109.66
0.012
108.58
0.83
–31.27
800
0.36
–100.37
8.46
106.44
0.012
114.73
0.82
–34.68
850
0.35
–105.06
7.92
103.48
0.014
115.62
0.82
–38.05
900
0.34
–109.12
7.39
101.58
0.015
116.40
0.82
–41.29
950
0.34
–113.76
7.02
100.76
0.017
116.04
0.82
–44.70
1000
0.34
–117.50
6.81
99.95
0.019
122.13
0.82
–47.58
1050
0.34
–121.31
6.64
97.57
0.021
122.61
0.83
–50.73
1100
0.34
–124.67
6.36
94.92
0.023
121.36
0.83
–53.76
1150
0.35
–127.76
6.09
92.79
0.025
123.58
0.83
–56.81
1200
0.35
–130.93
5.80
90.59
0.026
125.25
0.83
–59.62
1250
0.36
–133.78
5.48
88.25
0.030
123.53
0.84
–62.32
1300
0.36
–136.90998
5.10
87.00
0.03
122.37
0.84
–65.27
1350
0.37
–140.02216
4.82
87.05
0.03
122.64
0.85
–68.06
1999 Mar 02
28
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 5. Typical S-Parameters of Low Band Mixer Input at VCC = +3.75V, LB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
100
0.85
–13.10
150
0.84
–17.65
200
0.85
–23.74
250
0.85
–29.63
300
0.85
–37.49
350
0.85
–45.23
400
0.85
–54.50
450
0.80
–64.14
500
0.75
–73.90
550
0.70
–82.34
600
0.67
–91.47
650
0.57
–100.54
700
0.53
–106.44
750
0.51
–114.37
800
0.49
–123.87
850
0.48
–132.17
900
0.49
–141.42
950
0.47
–150.07
1000
0.47
–160.64
1050
0.47
–169.49
1100
0.47
–179.79
1150
0.48
171.14
1200
0.48
162.01
1250
0.49
154.08
1300
0.50
144.55
1350
0.51
136.11
29
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 6. Typical S-Parameters of Low Band LO Input at VCC = +3.75V, LB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
100
0.76
–55.83
150
0.73
–78.35
200
0.70
–98.64
250
0.68
–116.73
300
0.66
–133.17
350
0.64
–147.82
400
0.61
–161.51
450
0.59
–173.68
500
0.55
173.99
550
0.51
162.15
600
0.46
150.30
650
0.38
140.69
700
0.29
132.76
750
0.18
131.71
800
0.10
171.44
850
0.18
–150.19
900
0.31
–149.41
950
0.42
–157.78
1000
0.50
–166.73
1050
0.57
–175.14
1100
0.61
177.49
1150
0.64
170.74
1200
0.66
164.22
1250
0.68
157.61
1300
0.68
150.89
1350
0.65
144.80
30
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 7. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.58
–135.43
1450
0.59
–138.48
1500
0.59
–141.42
1550
0.60
–144.44
1600
0.62
–146.93
1650
0.63
–149.85
1700
0.65
–154.08
1750
0.66
–158.38
1800
0.66
–162.67
1850
0.66
–167.09
1900
0.65
–170.72
1950
0.63
–172.76
2000
0.64
–175.38
2050
0.61
–178.44
2100
0.60
–179.38
2150
0.59
179.32
2200
0.58
178.44
2250
0.58
177.61
2300
0.57
176.29
2350
0.57
175.39
2400
0.57
174.35
2450
0.56
173.01
2500
0.57
172.12
2550
0.57
170.91
2600
0.56
169.89
2650
0.56
168.41
31
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 8. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Strong Signal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.81
–73.99
1450
0.81
–77.23
1500
0.81
–80.62
1550
0.80
–84.00
1600
0.80
–87.02
1650
0.80
–90.35
1700
0.79
–93.54
1750
0.79
–96.48
1800
0.79
–100.32
1850
0.79
–103.54
1900
0.79
–107.23
1950
0.79
–110.05
2000
0.77
–113.75
2050
0.78
–114.79
2100
0.79
–117.61
2150
0.79
–120.50
2200
0.80
–122.65
2250
0.79
–125.91
2300
0.80
–128.17
2350
0.79
–130.64
2400
0.79
–133.19
2450
0.79
–135.66
2500
0.79
–138.22
2550
0.79
–140.56
2600
0.79
–143.22
2650
0.79
–145.47
32
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 9. Typical S-Parameters of HB LO Input at VCC = +3.75V, HB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.62
–87.50
1450
0.61
–90.87
1500
0.60
–94.44
1550
0.60
–98.86
1600
0.59
–102.10
1650
0.59
–106.34
1700
0.58
–110.67
1750
0.57
–114.48
1800
0.57
–119.86
1850
0.55
–126.14
1900
0.48
–134.66
1950
0.43
–123.95
2000
0.47
–126.26
2050
0.48
–128.33
2100
0.50
–131.34
2150
0.50
–135.52
2200
0.50
–138.76
2250
0.50
–142.68
2300
0.50
–146.60
2350
0.49
–150.21
2400
0.49
–154.30
2450
0.48
–157.62
2500
0.47
–161.79
2550
0.46
–166.32
2600
0.45
–170.41
2650
0.43
–174.86
33
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
1999 Mar 02
34
SA1921
SOT313-2
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
NOTES
1999 Mar 02
35
SA1921
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 03–99
Document order number:
1999 Mar 02
36
9397 750 05353