APT85GR120B2_L_A.pdf

APT85GR120B2_L
APT85GR120B2
APT85GR120L
1200V, 85A, Vce(on) = 2.5V Typical
Ultra Fast NPT - IGBT®
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior
ruggedness and ultrafast switching speed.
Features
• Low Saturation Voltage
• Short Circuit Withstand Rated
• Low Tail Current
• High Frequency Switching
• RoHS Compliant
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
Parameter
Ratings
Vces
Collector Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
170
I C2
Continuous Collector Current @ TC = 100°C
85
I CM
Pulsed Collector Current
340
SCWT
PD
TJ,TSTG
TL
1
Unit
V
A
Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C
10
μs
Total Power Dissipation @ TC = 25°C
962
W
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
1200
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Typ
Max
5.0
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C)
2.5
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C)
3.3
Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C)
3.5
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
10
(VCE = VGE, I C = 2.5mA, Tj = 25°C)
3.5
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
2
Unit
Volts
1000
μA
±250
nA
100
Gate-Emitter Leakage Current (VGE = ±20V)
Microsemi Website - http://www.microsemi.com
052-6402
Rev A
8-2012
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
APT85GR120B2_L
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Test Conditions
Cres
Reverse Transfer Capacitance
VGEP
Gate to Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate- Collector Charge
td(off)
tf
Capacitance
8400
VGE = 0V, VCE = 25V
725
f = 1MHz
190
Eon2
V
660
60
85
IC = 85A
230
320
Inductive Switching (25°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
300
85
IC = 85A
Turn-On Switching Energy
RG = 4.3 Ω
6000
9000
Turn-Off Switching Energy
TJ = +25°C
3800
5700
td(on)
Turn-On Delay Time
tr
td(off)
Eon2
4
Inductive Switching (125°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
350
Current Fall Time
tf
nC
ns
Eoff 6
5
Unit
pF
490
VCE= 600V
Current Fall Time
Max
7.5
Gate Charge
Turn-On Delay Time
tr
Typ
VGE = 15V
Qge
td(on)
Min
μJ
ns
95
IC = 85A
5
Turn-On Switching Energy
RG = 4.3 Ω
Eoff 6
Turn-Off Switching Energy
TJ = +125°C
7800
11,700
4900
7350
Typ
Max
4
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
Min
RθJC
Junction to Case Thermal Resistance (IGBT)
.13
RθJA
Junction to Ambient Thermal Resistance
40
B2
WT
Package Weight
L
Unit
°C/W
.22
oz
6
g
.36
oz
10
g
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6402
D = 0.9
0.12
0.10
0.7
0.08
0.5
Note:
0.06
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
Rev A
8-2012
0.14
0.3
0.04
t1
t2
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.02
0.05
0
10
-5
SINGLE PULSE
10
-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TYPICAL PERFORMANCE CURVES
APT85GR120B2_L
120
200
V
180
80
60
40
20
= 15V
160
IC, COLLECTOR CURRENT (A)
FREQUENCY (kHz)
100
GE
TJ= - 55°C
140
TJ= 25°C
120
TJ= 125°C
100
80
TJ= 150°C
60
40
20
80
100 120 140
160
IC(A)
FIGURE 2, Max Frequency vs Current (Tcase = 75°C)
300
15V 13V
40
250
10V
200
9.0V
150
8.0V
100
7.5V
50
7V
6.5V
0
0
0
50
4
8
12
16
0
1
2
3
4
5
6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Saturation Voltage Characteristics (TJ = 25°C)
6
5
4
IC = 85A
3
2
250
200
150
100
TJ= 150°C
50
0
TJ= 125°C
TJ= 25°C
0
TJ= -55°C
1
2 3
4 5
6
7 8
9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6, Transfer Characteristics
-50
-25
0
25
50 75
100 125
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
6
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
4
IC = 170A
3
IC = 85A
IC = 42.5A
2
1
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
250
1.10
6
1.05
0.90
0.85
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 8, Threshold Voltage vs Junction Temperature
150
100
8-2012
0.95
200
50
0
Rev A
1.00
IC, DC COLLECTOR CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
IC = 42.5A
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4, Output Characteristics (TJ = 25°C)
300
IC = 170A
-50
-25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
FIGURE 9, DC Collector Current vs Case Temperature
052-6402
IC, COLLECTOR CURRENT (A)
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
TYPICAL PERFORMANCE CURVES
APT85GR120B2_L
2.0E−8
C, CAPACITANCE (F)
1.0E−8
1.0E−9
Coes
Cres
VGE, GATE-TO-EMITTER VOLTAGE (V)
18
Cies
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
180
SWITCHING TIME (ns)
100
80
Td(on)
60
2
100
200
300
400
GATE CHARGE (nC)
FIGURE 11, Gate charge
500
Td(off)
300
250
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
200
150
20
50
Tf
0
10 20 50 70 90 110 130 150 170
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-On Time vs Collector Current
20 40
60 80 100 120 140 160 180
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-Off Time vs Collector Current
16000
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
SWITCHING ENERGY LOSS (μJ)
SWITCHING ENERGY LOSS (μJ)
15000
Eon2
10000
5000
Eoff
14000
Eon2
12000
10000
8000
Eoff
6000
4000
VCE = 600V, VGE=15V, IC = 85A
TJ = 125°C
2000
0
0
40
80
120
160
200
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Energy Loss vs Collector Current
0
10
20
30
40
50
RG, GATE RESISTANCE (Ω)
FIGURE 15, Energy Loss vs Gate Resistance
500
Eon2
7000
6000
IC, COLLECTOR CURRENT (A)
SWITCHING ENERGY LOSSES (μJ)
4
350
8000
8-2012
VCE = 960V
6
100
20000
Rev A
8
40
0
VCE = 600V
10
400
120
0
VCE = 240V
12
450
Tr
140
052-6402
14
0
SWITCHING TIME (ns)
160
J
0
1.0E−10
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C or 125°C
I = 85A
C
T = 25°C
16
VCE = 600V, VGE=15V, RG = 4.3Ω
IC = 85A
5000
Eoff
4000
3000
100
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Swiitching Energy vs Junction Temperature
1ms
10ms
1
0.1
0
100μs
10
1
10
100
1000 4000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Minimum Switching Safe Operating Area
APT85GR120B2_L
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
8-2012
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
Rev A
Collector
20.80 (.819)
21.46 (.845)
Dimensions in Millimeters and (Inches)
052-6402
Collector
5.38 (.212)
6.20 (.244)
APT85GR120B2_L
052-6402
Rev A
8-2012
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product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
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or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User
or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s
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